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Specifications
Current - Dark(Id):
100nA
Peak Wavelength:
880nm
Operating Temperature:
-25℃~+85℃
Mfr. Part #:
DY-PTS1608B/S-G5-4T-06
Package:
0603
Key Attributes
Model Number:
DY-PTS1608B/S-G5-4T-06
Product Description
Product Overview
The TONYU DY-PTS1608B/S-G5-4T-06 is a compact SMD infrared receiver transistor designed for high packaging density and minimal space occupation. It features a sensitive infrared receiving capability, fast response time, and high photo sensitivity. This Pb-free component is compliant with RoHS requirements and is suitable for applications in printers, sweeping machines, and general infrared application systems.
Product Attributes
- Brand: TONYU
- Model: DY-PTS1608B/S-G5-4T-06
- Type: SMD Phototransistor
- Material: Silicone nature
- Compliance: Pb free, RoHS compliant
- Origin: Guangzhou, China
- Packaging: 4000 PCS/rolls (Tape & Reel)
Technical Specifications
| Item | Symbol | Test Condition | Min | Type | Max | Unit | Notes |
|---|---|---|---|---|---|---|---|
| Collector-Emitter Breakdown Voltage | BVceo | Ic=100uA, Ee=0mW/cm | 90 | 120 | 160 | V | |
| Emitter-Collector Breakdown Voltage | BVeco | Ie=10uA, Ee=0mW/cm | 7 | 9 | 11 | V | |
| Collector-Baseelectrode Breakdown Voltage | BVcbo | Ic=100uA, Ee=0mW/cm | 70 | - | - | V | |
| Collector-Emitter Saturation Voltage | Vce(sat) | Ic=2mA, Ee=1mW/cm, IB=100A | - | - | 0.2 | V | |
| Collector Dark Current | ICEO | Ee=0mW/cm, Vce=50V | - | - | 100 | nA | |
| On State Collector Current | Ic(on) | Ee=1mW/cm, Vce=5V, p=940nm | 0.15 | - | 0.52 | mA | |
| Rise Time | Tr | VCE=5V, IC=1mA, RL=1000 | - | 15 | - | S | |
| Fall Time | Tf | VCE=5V, IC=1mA, RL=1000 | - | 15 | - | S | |
| Range of Spectral Band Width | 0.5 | 700 | - | 1100 | nm | ||
| Peak Wavelength | p | - | 880 | - | nm | ||
| Collector Current Bin (GI) | IF=20mA, p=940nm | 0.15 | - | 0.18 | mA | Tolerance: 11% | |
| Collector Current Bin (HI) | IF=20mA, p=940nm | 0.18 | - | 0.21 | mA | Tolerance: 11% | |
| Collector Current Bin (II) | IF=20mA, p=940nm | 0.21 | - | 0.25 | mA | Tolerance: 11% | |
| Collector Current Bin (JI) | IF=20mA, p=940nm | 0.25 | - | 0.3 | mA | Tolerance: 11% | |
| Collector Current Bin (KI) | IF=20mA, p=940nm | 0.3 | - | 0.36 | mA | Tolerance: 11% | |
| Collector Current Bin (LI) | IF=20mA, p=940nm | 0.36 | - | 0.43 | mA | Tolerance: 11% | |
| Collector Current Bin (MI) | IF=20mA, p=940nm | 0.43 | - | 0.52 | mA | Tolerance: 11% | |
| Collector-Emitter Voltage | VCEO | - | - | 30 | V | ||
| Emitter-Collector-Voltage | VECO | - | - | 5 | V | ||
| Operation Temperature | Tamb | -25 | - | +85 | |||
| Storage Temperature | Tstg | -40 | - | +85 | |||
| Soldering Temperature (Reflow) | Tsol | - | - | 260 | 260C, 10s | ||
| Soldering Temperature (Manual) | Tsol | - | - | 300 | 300C, 3s |
Note: All dimensions are in mm, tolerance is 0.25 unless otherwise noted. Environmental conditions for Electro-Optical Characteristics: Ambient temperature: 25, Humidity: RH60%.
2504101957_TONYU-DY-PTS1608B-S-G5-4T-06_C46682596.pdf
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