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quality Low Voltage Hall Effect Switch WILLSEMI WH251E-3/TR with Integrated Voltage Regulator and Amplifier factory
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quality Low Voltage Hall Effect Switch WILLSEMI WH251E-3/TR with Integrated Voltage Regulator and Amplifier factory
>
Specifications
Operation Points:
3mT
Operating Current:
5uA
Release Points:
2mT
Operating Temperature:
-40℃~+85℃
Voltage - Supply:
1.65V~5V
Mfr. Part #:
WH251E-3/TR
Package:
TSOT-23-3L
Key Attributes
Model Number: WH251E-3/TR
Product Description

Product Overview

The WH251E is a micropower, temperature-stable, and stress-resistant Hall-effect switch from Will Semiconductor Ltd. It features low tolerance sensitivity and superior high-temperature performance due to dynamic offset cancellation with chopper stabilization. Designed for low operating voltage (1.65V), it integrates a voltage regulator, Hall voltage generator, amplifier, chopper stabilization, Schmitt trigger, and CMOS output driver on a single silicon chip. Advanced CMOS fabrication ensures low-voltage requirements, component matching, and minimal input-offset errors. This omni-polar device requires a magnetic field for operation and is available in a Halogen Free package verified by a third-party lab.

Product Attributes

  • Brand: Will Semiconductor Ltd.
  • Package Type: TSOT-23-3L
  • Certifications: Halogen Free (verified by third party Lab), HBM > 4KV

Technical Specifications

Characteristic Parameter Test Conditions Min Typ Max Unit
DC Operating Parameters Supply Voltage (VDD) Operating 1.65 3.3 5 V
Supply Current (IDD) Awake State 1.4 3 mA
Supply Current (IDD) Sleep State 3.6 7 A
Supply Current (IDD) Average 5 10 A
Output Parameters Output Leakage Output off 1 A
Output High Voltage (VOH) IOUT=0.5mA(Source) VDD-0.2 V
Output Low Voltage (VOL) IOUT=0.5mA(Sink) 0.2 V
Timing Parameters Awake mode time (Taw) Operating 40 80 S
Sleep mode time (TSL) Operating 40 80 mS
Duty Cycle (D,C) 0.1 %
Magnetic Specifications Operating Point (BOPS) N pole to branded side, B > BOP, Vout On 20 30 40 Gauss
Operating Point (BOPN) S pole to branded side, B > BOP, Vout On -40 -30 -20 Gauss
Release Point (BRPS) N pole to branded side, B < BRP, Vout Off 10 20 30 Gauss
Release Point (BRPN) S pole to branded side, B < BRP, Vout Off -30 -20 -10 Gauss
Hysteresis (BHYS) |BOPx - BRPx| 10 Gauss
Absolute Maximum Ratings Supply voltage (VDD) (Ta=25 ) 6 V
Output Voltage (Vout) (Ta=25 ) 6 V
Storage temperature range (Ts) -65 150

Applications

  • Solid state switch
  • Handheld Wireless Handset Awake Switch (Flip Cell/PHS Phone/Note Book/Flip Video Set)
  • Lid close sensor for battery powered devices
  • Magnet proximity sensor for reed switch replacement in low duty cycle applications
  • Water Meter
  • Floating Meter
  • PDVD
  • NB

2410121517_WILLSEMI-WH251E-3-TR_C719463.pdf

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