Product Overview
The VEMD2704 is a high-speed, high-sensitivity silicon PIN photodiode from Vishay Semiconductors. It features enhanced sensitivity to visible light, making it ideal for heart rate monitoring and pulse oximetry applications. Its top-view, surface-mount package with clear epoxy ensures maximum sensitivity to visible and near-infrared radiation.
Product Attributes
- Brand: Vishay Semiconductors
- Package Type: Surface-mount
- Package Form: Top view
- Color: Clear epoxy
- Material Categorization: For definitions of compliance see www.vishay.com/doc?99912
Technical Specifications
| Parameter | Test Condition | Symbol | Min. | Typ. | Max. | Unit |
| Forward Voltage | IF = 50 mA | VF | 1.0 | 1.2 | 1.3 | V |
| Reverse Dark Current | VR = 10 V, E = 0 | Iro | - | 0.03 | 40 | nA |
| Diode Capacitance | VR = 0 V, f = 1 MHz, E = 0 | CD | - | 17.6 | - | pF |
| Reverse Light Current | Ee = 0.1 mW/cm2, = 530 nm, VR = 5 V | Ira | 0.35 | 0.48 | 0.65 | A |
| Ee = 0.1 mW/cm2, = 660 nm, VR = 5 V | Ira | - | 0.77 | - | A | |
| Ee = 0.1 mW/cm2, = 850 nm, VR = 5 V | Ira | 0.75 | 1.13 | 1.40 | A | |
| Ee = 0.1 mW/cm2, = 940 nm, VR = 5 V | Ira | 0.85 | 1.17 | 1.50 | A | |
| Angle of Half Sensitivity | - | 67 | - | |||
| Wavelength of Peak Sensitivity | p | - | 940 | - | nm | |
| Range of Spectral Bandwidth | 0.1 | 350 | - | 1100 | nm | |
| Rise Time | VR = 5 V, RL = 50 , = 530 nm | tr | - | 70 | - | ns |
| Fall Time | VR = 5 V, RL = 50 , = 530 nm | tf | - | 70 | - | ns |
Absolute Maximum Ratings
| Parameter | Test Condition | Symbol | Value | Unit |
| Reverse Voltage | VR | 6 | V | |
| Ambient Temperature Range | Tamb | -40 to +85 | C | |
| Storage Temperature Range | Tstg | -40 to +85 | C | |
| Soldering Temperature | According to reflow solder profile Fig. 7 | Tsd | 260 | C |
| ESD Safety (HBM) | 1.5 k, 100 pF, 3 pulses | ESDHBM | 2 | kV |
2506111631_VISHAY-VEMD2704_C22414855.pdf
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