Online Service

Online Service

Contact Person
+86 136 6733 2386
quality TONYU DY-PTS1206B S G8 2TC 06 SMD infrared phototransistor compact size fast response RoHS compliant factory
<
quality TONYU DY-PTS1206B S G8 2TC 06 SMD infrared phototransistor compact size fast response RoHS compliant factory
quality TONYU DY-PTS1206B S G8 2TC 06 SMD infrared phototransistor compact size fast response RoHS compliant factory
>
Specifications
Collector - Emitter Voltage VCEO:
30V
Current - Dark(Id):
100nA
Peak Wavelength:
940nm
Operating Temperature:
-25℃~+85℃
Mfr. Part #:
DY-PTS1206B/S-G8-2TC-06
Package:
1206
Key Attributes
Model Number: DY-PTS1206B/S-G8-2TC-06
Product Description

Product Overview

The TONYU DY-PTS1206B/S-G8-2TC-06 is a compact SMD infrared receiver transistor designed for high packaging density and minimal space occupation. It features a small-size packaging structure with sensitive receiving capabilities, making it suitable for applications requiring fast response times and high photo sensitivity. This Pb-free component complies with RoHS requirements and is ideal for use in printers, sweeping machines, and various infrared application systems.

Product Attributes

  • Brand: TONYU
  • Product Type: SMD Phototransistor
  • Model: DY-PTS1206B/S-G8-2TC-06
  • Origin: China (Guangdong Province, Guangzhou City, Panyu District, Shiji Town)
  • Packaging: Tape & Reel (2000 PCS/roll)
  • Certifications: RoHS compliant
  • Material: Silicone nature

Technical Specifications

Item Symbol Test Condition Min. Type Max. Unit
Collector-Emitter Breakdown Voltage BVceo Ic=100uA, Ee=0mW/cm 90 - - V
Emitter-Collector Breakdown Voltage BVeco Ie=10uA, Ee=0mW/cm 7 - 11 V
Collector-Baseelectrode Breakdown Voltage BVcbo Ic=100uA, Ee=0mW/cm 70 - - V
Collector-Emitter Saturation Voltage Vce(sat) Ic=2mA, Ee=1mW/cm, IB=100A - - 0.3 V
Collector Dark Current ICEO Ee=0mW/cm, Vce=50V - - 100 nA
On State Collector Current Ic(on) Ee=1mW/cm, Vce=5V, p=940nm 3.9 - 11.5 mA
Range of spectral Band width 0.5 - 700 - 1100 nm
Peak wavelength p - - 940 - nm
Collector-Emitter Voltage VCEO - - - 30 V
Emitter-Collector Voltage VECO - - - 5 V
Operation temperature Tamb - -25 - +85
Storage temperature Tstg - -40 - +85
Soldering temperature Tsol Reflow Soldering - - 260
Soldering temperature Tsol Manual Soldering - - 300

Notes:

  • Ambient temperature: 25, Humidity: RH60%
  • Forward voltage tolerance: 0.1v
  • Collector Current tolerance: 10%
  • Pulse Width100s and Duty1% for IFP Conditions.

Bin Range of Collector Current:

Bin Min Max Unit Condition
GH 3.9 4.85 mA IF=20mA, p=940nm
HH 4.85 6.1 mA IF=20mA, p=940nm
AJ 6.1 7.5 mA IF=20mA, p=940nm
BJ 7.5 9.5 mA IF=20mA, p=940nm
CJ 9.5 11.5 mA IF=20mA, p=940nm

Notes: Tolerance of Collector Current: 11%


2504101957_TONYU-DY-PTS1206B-S-G8-2TC-06_C46682592.pdf

Request A Quote

Please Use Our Online Inquiry Contact Form Below If You Have Any Questions, Our Team Will Get Back To You As Soon As Possible

You Can Upload Up To 5 Files And Each File Sized 10M Max