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quality Small size SMD infrared receiver transistor TONYU DY-PTS1206B S G17 2T 06 with high photosensitivity factory
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quality Small size SMD infrared receiver transistor TONYU DY-PTS1206B S G17 2T 06 with high photosensitivity factory
quality Small size SMD infrared receiver transistor TONYU DY-PTS1206B S G17 2T 06 with high photosensitivity factory
>
Specifications
Collector - Emitter Voltage VCEO:
30V
Current - Dark(Id):
100nA
Peak Wavelength:
940nm
Operating Temperature:
-25℃~+85℃
Mfr. Part #:
DY-PTS1206B/S-G17-2T-06
Package:
1206
Key Attributes
Model Number: DY-PTS1206B/S-G17-2T-06
Product Description

Product Overview

The TONYU DY-PTS1206B/S-G17-2T-06 is a SMD infrared receiver transistor featuring a small-size packaging structure for high packaging density and minimal space occupation. It offers a fast response time and high photosensitivity, making it suitable for applications such as printers, sweeping machines, and general infrared systems. This product is Pb-free and RoHS compliant.

Product Attributes

  • Brand: TONYU
  • Product Type: SMD Phototransistor
  • Model: DY-PTS1206B/S-G17-2T-06
  • Packaging: SMD
  • Certifications: RoHS compliant
  • Material: Silicone nature (for packaging)
  • Origin: China (Guangzhou)

Technical Specifications

Item Symbol Test Condition Min. Type Max. Unit
Collector-Emitter Breakdown Voltage BVceo Ic=100uA, Ee=0mW/cm 90 - - V
Emitter-Collector Breakdown Voltage BVeco Ie=10uA, Ee=0mW/cm - 7 11 V
Collector-Baseelectrode Breakdown Voltage BVcbo Ic=100uA, Ee=0mW/cm 70 - - V
Collector-Emitter Saturation Voltage Vce(sat) Ic=2mA, Ee=1mW/cm, IB=100A - - 0.3 V
Collector Dark Current ICEO Ee=0mW/cm, Vce=50V - - 100 nA
On State Collector Current Ic(on) Ee=1mW/cm, Vce=5V, p=940nm 0.75 - 1.65 mA
Spectral Bandwidth . - 700 - 1100 nm
Peak wavelength p - - 940 - nm
Collector Current (Bin Range) PI IF=20mA, p=940nm 0.75 0.9 mA
Collector Current (Bin Range) QI IF=20mA, p=940nm 0.9 1.1 mA
Collector Current (Bin Range) AH IF=20mA, p=940nm 1.1 1.37 mA
Collector Current (Bin Range) BH IF=20mA, p=940nm 1.37 1.65 mA
Collector-Emitter Voltage VCEO - - - 30 V
Emitter-Collector Voltage VECO - - - 5 V
Operation Temperature Tamb - -25 - +85
Storage Temperature Tstg - -40 - +85
Soldering Temperature (Reflow) Tsol - - - 260 (10s)
Soldering Temperature (Manual) Tsol - - - 300 (3s)

Packaging

  • Reel package: 2000 PCS/reel

2504101957_TONYU-DY-PTS1206B-S-G17-2T-06_C46682594.pdf

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