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Specifications
Mfr. Part #:
GP1S296HCPSF
Package:
SMD-4P
Key Attributes
Model Number:
GP1S296HCPSF
Product Description
Product Overview
The GP1S296HCPSF is a compact, low-profile, transmissive photointerrupter featuring a phototransistor output. It is designed for detecting objects between its emitter and detector. Its unique molded package combines transfer and injection molding technologies, making it a surface-mount type. This product is ideal for general-purpose detection of object presence or motion in applications such as printers, camera lens control, and various mechanical position detection systems. It is compliant with the RoHS directive.
Product Attributes
- Brand: SHARP
- Model: GP1S296HCPSF
- Type: Transmissive Photointerrupter with Phototransistor Output
- Mounting Type: Surface-mount
- Compliance: RoHS directive compliant (2002/95/EC)
- Material (Case): Black PPS resin (UL 94V-0)
- Material (Lead frame): 42 Alloy
- Material (Lead frame plating): Au-Pd-Ni-Cu
- Country of Origin: China
- Product Mass: Approx. 10mg
Technical Specifications
| Parameter | Symbol | Conditions | Rating | Unit | MIN. | TYP. | MAX. |
|---|---|---|---|---|---|---|---|
| Key Features | |||||||
| Gap Width | - | - | - | mm | - | 1.0 | - |
| Slit Width (detector side) | - | - | - | mm | - | 0.2 | - |
| Package Dimensions | - | - | - | mm | - | 2.51.81.9 | - |
| Absolute Maximum Ratings (Ta=25C) | |||||||
| Input Forward current | IF | - | 30 | mA | - | - | - |
| Reverse voltage | VR | - | 6 | V | - | - | - |
| Power dissipation (Input) | P | - | 60 | mW | - | - | - |
| Output Collector-emitter voltage | VCEO | - | 35 | V | - | - | - |
| Output Emitter-collector voltage | VECO | - | 6 | V | - | - | - |
| Output Collector current | Ic | - | 20 | mA | - | - | - |
| Output Collector power dissipation | Pc | - | 60 | mW | - | - | - |
| Total power dissipation | Ptot | - | 80 | mW | - | - | - |
| Operating temperature | Topr | - | - | C | -25 | - | +85 |
| Storage temperature | Tstg | - | - | C | -40 | - | +100 |
| Soldering temperature | Tsol | * Soldering time : 3 s or less | 260 | C | - | - | - |
| Electro-optical characteristics (Ta=25C) | |||||||
| Input Forward voltage | VF | IF=20mA | - | V | - | 1.2 | 1.4 |
| Reverse current | IR | VR=3V | - | A | - | - | 10 |
| Output Collector dark current | ICEO | VCE=20V | - | nA | - | - | 100 |
| Transfer characteristics Collector current | Ic | VCE=5V, IF=5mA | - | A | 150 | - | 600 |
| Response time (Rise) | tr | VCE=5V, Ic=100A RL=1k | - | s | - | 50 | 150 |
| Response time (Fall) | tf | - | - | s | - | 50 | 150 |
| Collector-emitter saturation voltage | VCE(sat) | IF=10mA, Ic=40A | - | V | - | - | 0.4 |
| Parts Details | |||||||
| Light detector Type | - | - | Phototransistor | - | - | - | - |
| Light detector Material | - | - | Silicon (Si) | - | - | - | - |
| Light emitter Type | - | - | Infrared light emitting diode (non-coherent) | - | - | - | - |
| Light emitter Material | - | - | GaAs | - | - | - | - |
2411261546_SHARP-GP1S296HCPSF_C17608559.pdf
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