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Specifications
Mfr. Part #:
GP1S51VJ000F
Package:
DIP-4
Key Attributes
Model Number:
GP1S51VJ000F
Product Description
Product Overview
The SHARP GP1S51VJ000F is a standard, transmissive photointerrupter designed for non-contact sensing applications. Featuring a phototransistor output and an opposing emitter and detector housed within a case, it offers a gap width of 3mm and a slit width of 0.5mm on the detector side. This device is ideal for general-purpose detection of object presence or motion, commonly found in printers, FAX machines, and optical storage units. Its design includes additional screw fixing holes for enhanced mounting flexibility. The GP1S51VJ000F is lead-free and RoHS directive compliant.
Product Attributes
- Brand: SHARP
- Model: GP1S51VJ000F
- Certifications: RoHS directive compliant
- Material (Case): Black NORYL resin
- Material (Lead frame plating): Solder dip (Sn-3Ag-0.5Cu)
- Origin: Japan, Indonesia or Philippines (Indicated on the packing case)
Technical Specifications
| Specification | Value | Unit |
|---|---|---|
| Gap Width | 3 | mm |
| Slit Width (detector side) | 0.5 | mm |
| Package Dimensions | 12.21018 | mm |
| Product Mass | approx. 0.7 | g |
| Input Forward Current (IF) | 50 | mA |
| Input Peak Forward Current (IFM) | 1 | A |
| Input Reverse Voltage (VR) | 6 | V |
| Input Power Dissipation (P) | 75 | mW |
| Output Collector-Emitter Voltage (VCEO) | 35 | V |
| Output Emitter-Collector Voltage (VECO) | 6 | V |
| Output Collector Current (IC) | 20 | mA |
| Output Collector Power Dissipation (PC) | 75 | mW |
| Operating Temperature (Topr) | -25 to +85 | C |
| Storage Temperature (Tstg) | -40 to +100 | C |
| Soldering Temperature (Tsol) | 260 (for 5s or less) | C |
| Input Forward Voltage (VF) (IF=20mA) | - / 1.25 / 1.4 | V |
| Input Peak Forward Voltage (VFM) (IFM=0.5A) | 3 / 4 | V |
| Input Reverse Current (IR) (VR=3V) | - / - / 10 | A |
| Output Collector Dark Current (ICEO) (VCE=20V) | - / 1 / 100 | nA |
| Transfer Characteristics Collector Current (IC) (VCE=5V, IF=20mA) | 0.5 / - / 5 | mA |
| Transfer Characteristics Collector-Emitter Saturation Voltage (VCE(sat)) (IF=40mA, IC=0.5mA) | - / - / 0.4 | V |
| Response Time Rise Time (tr) (VCE=2V, IC=2mA, RL=100) | - / 3 / 15 | s |
| Response Time Fall Time (tf) (VCE=2V, IC=2mA, RL=100) | - / 4 / 20 | s |
| Photo emitter Material | Gallium arsenide (GaAs) | - |
| Photo emitter Max. light emitting wavelength | 950 | nm |
| Photo emitter I/O Frequency | 0.3 | MHz |
| Photodetector Material | Silicon (Si) | - |
| Photodetector Max. Sensitivity wavelength | 1200 | nm |
| Photodetector Sensitivity wavelength | 400 to 800 | nm |
| Photodetector Response time | 3 | s |
2412232004_SHARP-GP1S51VJ000F_C390726.pdf
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