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Specifications
Operating Temperature:
-25℃~+85℃
Width:
2.6mm
Slot Width:
2mm
Height:
2.9mm
Slit Width:
0.3mm
Length:
4.5mm
Voltage - Forward(Vf):
1.2V
Rise Time:
50us
Output Current:
20mA
Fall Time:
50us
Mfr. Part #:
GP1S092HCPIF
Package:
SMD-4P
Key Attributes
Model Number:
GP1S092HCPIF
Product Description
SHARP GP1S092HCPIF Compact Transmissive Photointerrupter
The SHARP GP1S092HCPIF is a compact, surface-mount transmissive photointerrupter featuring a phototransistor output. Designed for non-contact sensing, it integrates opposing emitter and detector within a durable molding. Its unique design includes a D-shaped positioning pin for precise PCB placement and is available in Tape and Reel packaging, making it ideal for automated manufacturing processes. This device is suitable for general-purpose detection of object presence or motion, finding applications in printers and camera lens control.
Product Attributes
- Brand: SHARP
- Model: GP1S092HCPIF
- Type: Compact Transmissive Photointerrupter
- Output: Phototransistor
- Mounting Type: Surface Mount (SMT)
- Packaging: Tape and Reel (T&R)
- Compliance: RoHS directive compliant
- Origin: Japan (Date code indicates production year and month)
- Material (Case): Black polyphernylene sulfide resin (UL94 V-0)
- Material (Lead frame): 42Alloy
- Lead frame plating: SnCu plating
Technical Specifications
| Parameter | Symbol | Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Dimensions | ||||||
| Package Dimensions | 4.5×2.6×2.9 | mm | ||||
| Gap Width | 2 | mm | ||||
| Slit Width (detector side) | 0.3 | mm | ||||
| Product mass | 0.05 | g | ||||
| Absolute Maximum Ratings | ||||||
| Forward current | IF | 50 | mA | |||
| Reverse voltage | VR | 6 | V | |||
| Power dissipation | P | 75 | mW | |||
| Collector-emitter voltage | VCEO | 35 | V | |||
| Emitter-collector voltage | VECO | 6 | V | |||
| Collector current | IC | 20 | mA | |||
| Collector power dissipation | PC | 75 | mW | |||
| Total power dissipation | Ptot | 100 | mW | |||
| Operating temperature | Topr | -25 | +85 | °C | ||
| Storage temperature | Tstg | -40 | +100 | °C | ||
| Soldering temperature | Tsol | For 5s or less | 260 | °C | ||
| Electro-optical Characteristics (Ta=25°C) | ||||||
| Forward voltage | VF | IF=20mA | 1.2 | 1.4 | V | |
| Reverse current | IR | VR=3V | 10 | μA | ||
| Collector dark current | ICEO | VCE=20V | 100 | nA | ||
| Collector current | IC | VCE=5V, IF=5mA | 100 | 400 | μA | |
| Collector-emitter saturation voltage | VCE(sat) | IF=10mA, IC=40μA | 0.4 | V | ||
| Rise time | tr | VCE=5V, IC=100μA, RL=1kΩ | 50 | 150 | μs | |
| Fall time | tf | VCE=5V, IC=100μA, RL=1kΩ | 50 | 150 | μs | |
| Internal Components | ||||||
| Photodetector | Category: Phototransistor | |||||
| Material: Silicon (Si) | ||||||
| Maximum Sensitivity wavelength | 930 | nm | ||||
| Sensitivity wavelength | 700 to 1200 | nm | ||||
| Response time | 20 | μs | ||||
| Photo emitter | Category: Infrared emitting diode (non-coherent) | |||||
| Material: Gallium arsenide (GaAs) | ||||||
| Maximum light emitting wavelength | 950 | nm | ||||
| I/O Frequency | 0.3 | MHz | ||||
2410121853_SHARP-GP1S092HCPIF_C69422.pdf
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