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quality Top view phototransistor SHARP PT100MF0MP1 surface mount type with opaque resin and lead free design factory
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quality Top view phototransistor SHARP PT100MF0MP1 surface mount type with opaque resin and lead free design factory
>
Specifications
Current - Collector(Ic):
20mA
Collector - Emitter Voltage VCEO:
35V
Current - Dark(Id):
100nA
Peak Wavelength:
910nm
Viewing Angle:
15°
Operating Temperature:
-30℃~+85℃
Mfr. Part #:
PT100MF0MP1
Package:
SMD
Key Attributes
Model Number: PT100MF0MP1
Product Description

Product Overview

The PT100MF0MPx is a surface mount type, opaque resin phototransistor from SHARP Corporation. Designed for compact and thin applications, it offers top and side view mountability with a visible light cut-off resin lens. Key features include peak sensitivity at 910 nm and a narrow directivity angle of 15. This RoHS directive compliant component is suitable for a wide range of applications including office automation, audio visual equipment, home appliances, telecommunication equipment, measuring equipment, tooling machines/factory automation, and touch panels.

Product Attributes

  • Brand: SHARP Corporation
  • Type: Surface Mount Type, Opaque Resin Phototransistor
  • Package: Compact and thin SMD package
  • Lens: Plastic mold with visible light cut-off (black) resin lens
  • Compliance: RoHS directive (2002/95/EC), China RoHS compliant
  • Lead Free: Yes

Technical Specifications

Model No. Packaging Mount Direction Parameter Conditions Min. Typ. Max. Unit
PT100MF0MPx 2000 pcs/reel (PT100MF0MP)
1500 pcs/reel (PT100MF0MP1)
Side view (PT100MF0MP)
Top view (PT100MF0MP1)
Collector-emitter voltage 35 V
Emitter-collector voltage 6 V
Collector current 20 mA
Collector power dissipation 75 mW
Operating temperature -30 85 C
Storage temperature -40 95 C
Soldering temperature Within 10 s (MAX.) 240 C
Collector current Ee = 1 mW/cm, VCE = 5 V 1.15 2 3.45 mA
Collector dark current Ee = 0, VCE = 20 V 100 nA
Collector-emitter saturation voltage Ee = 10 mW/cm, IC = 0.5 mA 0.1 0.4 V
Collector-emitter breakdown voltage IC = 0.1 mA, Ee = 0 35 V
Emitter-collector breakdown voltage IE = 0.01 mA, Ee = 0 6 V
Peak sensitivity wavelength 910 nm
Response time (Rise) VCE = 2 V, IC = 2 mA, RL = 100 5.0 s
Response time (Fall) 6.0 s
Angle of half intensity 15 degrees

External Dimensions: Unit: mm. Unspecified tolerance: 0.2 mm.

Product Mass: 0.01 g (approx.)


2410010102_SHARP-PT100MF0MP1_C2983170.pdf

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