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Specifications
Operating Temperature:
-25℃~+85℃
Width:
1.4mm
Slot Width:
1.2mm
Height:
1.6mm
Slit Width:
0.12mm
Length:
2.26mm
Voltage - Forward(Vf):
1.2V
Rise Time:
30us
Output Current:
20mA
Fall Time:
30us
Mfr. Part #:
GP1S396HCPSF
Package:
SMD
Key Attributes
Model Number:
GP1S396HCPSF
Product Description
Product Overview
The SHARP GP1S396HCPSF is a compact and low-profile transmissive photointerrupter featuring a phototransistor output. Engineered with industry-leading thin molding technology, it offers superior detection accuracy due to its narrow infrared beam slit width of 0.12mm. This device is designed for general-purpose detection of object presence or motion, making it suitable for applications such as printers, camera lens control, and various mechanical position detections. Its compact size and high precision make it an ideal solution for space-constrained designs requiring reliable object detection.
Product Attributes
- Brand: SHARP
- Model: GP1S396HCPSF
- Origin: China
- Certifications: RoHS directive compliant (2002/95/EC)
- Material: Black PPA resin (Case), 42 Alloy (Lead frame), Au-Pd-Ni-Cu (Lead frame plating)
- ODS Materials Compliance: Does not contain CFCS, Halon, Carbon tetrachloride, 1.1.1-Trichloroethane.
- Halogen Material Compliance: Chlorine < 900ppm, Bromine < 900ppm, Chlorine + Bromine < 1500ppm (Homogeneous material).
- Chinese RoHS Compliance: Compliant with Management Methods for Control of Pollution Caused by Electronic Information Products Regulation.
Technical Specifications
| Feature | Specification | Unit |
|---|---|---|
| Type | Transmissive Photointerrupter with Phototransistor Output | |
| Gap Width | 1.2 | mm |
| Slit Width (detector side) | 0.12 | mm |
| Package Dimensions | 2.26 1.4 1.6 | mm |
| Product Mass | Approx. 5 | mg |
| Input Forward Current (Max) | 30 | mA |
| Input Reverse Voltage (Max) | 6 | V |
| Input Power Dissipation (Max) | 50 | mW |
| Output Collector-Emitter Voltage (Max) | 35 | V |
| Output Emitter-Collector Voltage (Max) | 6 | V |
| Output Collector Current (Max) | 20 | mA |
| Output Collector Power Dissipation (Max) | 50 | mW |
| Total Power Dissipation (Max) | 70 | mW |
| Operating Temperature | -25 to +85 | C |
| Storage Temperature | -40 to +100 | C |
| Soldering Temperature (Max) | 300 | C |
| Soldering Time (Max) | 3 | s |
| Input Forward Voltage (Typ.) | 1.2 | V (IF=20mA) |
| Input Reverse Current (Max) | 10 | A (VR=3V) |
| Output Collector Dark Current (Max) | 100 | nA (VCE=20V) |
| Output Collector Current (Typ.) | 100 to 400 | A (VCE=5V, IF=5mA) |
| Response Time - Rise (Max) | 120 | s (VCE=5V, Ic=100A, RL=1k) |
| Response Time - Fall (Max) | 120 | s (VCE=5V, Ic=100A, RL=1k) |
| Collector-Emitter Saturation Voltage (Max) | 0.4 | V (IF=10mA, Ic=40A) |
| Light Detector Type | Phototransistor | |
| Light Detector Material | Silicon (Si) | |
| Light Detector Max Sensitivity | 920 | nm |
| Light Detector Sensitivity | 700 to 1200 | nm |
| Light Detector Response Time | 20 | s |
| Light Emitter Type | Infrared light emitting diode (non-coherent) | |
| Light Emitter Material | GaAs | |
| Light Emitter Max Light Emitting Wavelength | 940 | nm |
| Light Emitter I/O Frequency | 0.3 | MHz |
| Packing Quantity (Reel) | 2,500 | pcs./Reel |
| Packing Quantity (Box) | 12,500 | pcs./box |
| Regular Packaged Mass | Approx. 700 | g |
2411261458_SHARP-GP1S396HCPSF_C919625.pdf
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