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Specifications
Slot Width:
1.1mm
Width:
2mm
Height:
2.7mm
Slit Width:
0.3mm
Length:
3.1mm
Voltage - Forward(Vf):
1.2V
Rise Time:
50us
Fall Time:
50us
Mfr. Part #:
GP1S196HCZ0F
Package:
DIP-4
Key Attributes
Model Number:
GP1S196HCZ0F
Product Description
Product Overview
The GP1S196HCZ0F/GP1S196HCZSF is a compact, transmissive photointerrupter featuring a phototransistor output. Designed for non-contact sensing, it utilizes a unique molding technology for a smaller footprint compared to other devices in its family. With a narrow gap of 1.1mm and a slit width of 0.3mm, it is ideal for general-purpose detection of object presence or motion in applications such as printers and camera lens control. Available in Through-hole (GP1S196HCZ0F) and SMT (GP1S196HCZSF) packages, this RoHS directive compliant component offers a low-profile solution.
Product Attributes
- Brand: SHARP
- Origin: Japan
- Certifications: RoHS directive compliant
- Material (Case): Black polyphernylene sulfide resin (UL94 V-0)
- Material (Lead frame): 42Alloy
- Material (Lead frame plating): SnCu (Cu : TYP. 2%)
Technical Specifications
| Model | Gap | Slit Width (detector side) | Package Dimensions (L x W x H) | Product Mass | Output Type | Package Type |
|---|---|---|---|---|---|---|
| GP1S196HCZ0F | 1.1mm | 0.3mm | 3.1 2 2.7mm | approx. 0.022g | Phototransistor | Through-hole |
| GP1S196HCZSF | 1.1mm | 0.3mm | 3.1 2 2.7mm | approx. 0.02g | Phototransistor | SMT |
| Parameter | Symbol | Rating | Unit | Condition |
|---|---|---|---|---|
| Input Forward current | IF | 30 | mA | |
| Reverse voltage | VR | 6 | V | |
| Power dissipation | P | 75 | mW | |
| Collector-emitter voltage | VCEO | 35 | V | |
| Emitter-collector voltage | VECO | 6 | V | |
| Collector current | IC | 20 | mA | |
| Collector power dissipation | PC | 75 | mW | |
| Total power dissipation | Ptot | 100 | mW | |
| Operating temperature | Topr | -25 to +85 | C | |
| Storage temperature | Tstg | -40 to +100 | C | |
| Soldering temperature | Tsol | 260 | C | For 3s or less |
| Parameter | Symbol | Condition | MIN. | TYP. | MAX. | Unit |
|---|---|---|---|---|---|---|
| Forward voltage | VF | IF=20mA | - | 1.2 | 1.4 | V |
| Reverse current | IR | VR=3V | - | - | 10 | A |
| Collector dark current | ICEO | VCE=20V | - | - | 100 | nA |
| Collector current | IC | VCE=5V, IF=5mA | 100 | - | 400 | A |
| Collector-emitter saturation voltage | VCE(sat) | IF=10mA, IC=40A | - | - | 0.4 | V |
| Rise time | tr | VCE=5V, IC=100A, RL=1k | - | 50 | 150 | s |
| Fall time | tf | VCE=5V, IC=100A, RL=1k | - | 50 | 150 | s |
| Part | Material | Maximum Sensitivity wavelength (nm) | Sensitivity wavelength (nm) | Response time (s) |
|---|---|---|---|---|
| Photodetector | Silicon (Si) | 930 | 700 to 1 200 | 20 |
| Part | Material | Maximum light emitting wavelength (nm) | I/O Frequency (MHz) |
|---|---|---|---|
| Photo emitter | Gallium arsenide (GaAs) | 950 | 0.3 |
| Specification | Value | Unit |
|---|---|---|
| Unspecified tolerance | 0.1 | mm |
| Burr's dimensions | 0.15 MAX. | mm |
2410121847_SHARP-GP1S196HCZ0F_C394682.pdf
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