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Specifications
Mfr. Part #:
GP1S196HCZSF
Package:
SMD
Key Attributes
Model Number:
GP1S196HCZSF
Product Description
Product Overview
The GP1S196HCZ0F/GP1S196HCZSF are compact, transmissive photointerrupters featuring a phototransistor output. Designed for non-contact sensing, these devices utilize opposing emitter and detector elements within a molded package. Their small form factor is achieved through advanced molding technology, making them half the size of comparable devices in their family. Ideal for general-purpose detection of object presence or motion, they find applications in devices such as printers and camera lens control systems. Both Through-hole (GP1S196HCZ0F) and SMT (GP1S196HCZSF) variants are available.
Product Attributes
- Brand: SHARP
- Origin: Japan
- Certifications: Compliant with RoHS directive
- Material (Case): Black polyphenylene sulfide resin (UL94 V-0)
- Material (Lead frame): 42Alloy
- Material (Lead frame plating): SnCu (Cu: TYP. 2%)
- Emitter Type: Infrared emitting diode (non-coherent)
- Emitter Material: Gallium arsenide (GaAs)
- Detector Type: Phototransistor
- Detector Material: Silicon (Si)
Technical Specifications
| Specification | Value |
|---|---|
| Model Numbers | GP1S196HCZ0F, GP1S196HCZSF |
| Gap Width | 1.1mm |
| Slit Width (detector side) | 0.3mm |
| Package Dimensions (approx.) | 3.1 2 2.7mm |
| Product Mass (GP1S196HCZ0F) | approx. 0.022g |
| Product Mass (GP1S196HCZSF) | approx. 0.02g |
| Input Forward Current (IF) | 30 mA (Max.) |
| Input Reverse Voltage (VR) | 6 V (Max.) |
| Input Power Dissipation (P) | 75 mW (Max.) |
| Output Collector-Emitter Voltage (VCEO) | 35 V (Max.) |
| Output Emitter-Collector Voltage (VECO) | 6 V (Max.) |
| Output Collector Current (IC) | 20 mA (Max.) |
| Output Collector Power Dissipation (PC) | 75 mW (Max.) |
| Total Power Dissipation (Ptot) | 100 mW (Max.) |
| Operating Temperature (Topr) | -25 to +85 C |
| Storage Temperature (Tstg) | -40 to +100 C |
| Soldering Temperature (Tsol) | 260 C (For 3s or less) |
| Input Forward Voltage (VF) (IF=20mA) | 1.2 to 1.4 V (Typ.) |
| Input Reverse Current (IR) (VR=3V) | 10 A (Max.) |
| Output Collector Dark Current (ICEO) (VCE=20V) | 100 nA (Max.) |
| Transfer Characteristics Collector Current (IC) (VCE=5V, IF=5mA) | 100 to 400 A (Typ.) |
| Collector-Emitter Saturation Voltage (VCE(sat)) (IF=10mA, IC=40A) | 0.4 V (Max.) |
| Response Time Rise Time (tr) (VCE=5V, IC=100A, RL=1k) | 50 to 150 s (Typ.) |
| Response Time Fall Time (tf) (VCE=5V, IC=100A, RL=1k) | 50 to 150 s (Typ.) |
| Detector Sensitivity Wavelength | 700 to 1 200 nm (Max.) |
| Detector Maximum Sensitivity Wavelength | 930 nm |
| Emitter Maximum Light Emitting Wavelength | 950 nm |
| Emitter I/O Frequency | 0.3 MHz |
2411271936_SHARP-GP1S196HCZSF_C69423.pdf
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