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quality Compact transmissive photointerrupter SHARP GP1S094HCZ0F featuring wide gap and molded package for sensing factory
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quality Compact transmissive photointerrupter SHARP GP1S094HCZ0F featuring wide gap and molded package for sensing factory
>
Specifications
Operating Temperature:
-25℃~+85℃
Width:
2.6mm
Slot Width:
3mm
Height:
4.8mm
Slit Width:
0.3mm
Length:
5.5mm
Voltage - Forward(Vf):
1.2V
Rise Time:
50us
Output Current:
20mA
Fall Time:
50us
Mfr. Part #:
GP1S094HCZ0F
Package:
DIP-4
Key Attributes
Model Number: GP1S094HCZ0F
Product Description

GP1S094HCZ0F Compact Transmissive Photointerrupter

Product Overview

The GP1S094HCZ0F is a compact, transmissive photointerrupter featuring a phototransistor output. Designed for non-contact sensing, it utilizes opposing emitter and detector elements within a molded package. Its unique construction, achieved through transfer and injection molding, results in a compact size with a wide gap and integrated positioning pins to prevent misalignment. This device is ideal for detecting object presence or motion in applications such as printers and camera lens control.

Product Attributes

  • Brand: SHARP
  • Model: GP1S094HCZ0F
  • Origin: Japan
  • Certifications: Compliant with RoHS directive
  • Material (Case): Black polyphernylene sulfide resin (UL94 V-0)
  • Material (Lead frame): 42Alloy
  • Plating Material: SnCu (Cu : TYP. 2%)

Technical Specifications

Parameter Symbol Condition MIN. TYP. MAX. Unit
Key Parameters
Gap Width - - - 3 - mm
Slit Width (detector side) - - - 0.3 - mm
Package Dimensions - - - 5.52.64.8 - mm
Product Mass - - - 0.085 - g
Absolute Maximum Ratings (Ta=25C)
Input Forward current IF - - - 50 mA
Reverse voltage VR - - - 6 V
Power dissipation P - - - 75 mW
Output Collector-emitter voltage VCEO - - - 35 V
Emitter-collector voltage VECO - - - 6 V
Collector current IC - - - 20 mA
Collector power dissipation PC - - - 75 mW
Total power dissipation Ptot - - - 100 mW
Operating temperature Topr - -25 - +85 C
Storage temperature Tstg - -40 - +100 C
Soldering temperature Tsol *1 For 5s or less - - 260 C
Electro-optical Characteristics (Ta=25C )
Input Forward voltage VF IF=20mA - 1.2 1.4 V
Reverse current IR VR=3V - - 10 A
Collector dark current ICEO VCE=20V - - 100 nA
Collector current IC VCE=5V, IF=5mA 40 - 400 A
Collector-emitter saturation voltage VCE(sat) IF=10mA, IC=40A - - 0.4 V
Response time (Rise time) tr VCE=5V, IC=100A, RL=1k - 50 150 s
Response time (Fall time) tf VCE=5V, IC=100A, RL=1k - 50 150 s

Applications

  • Detection of object presence or motion.
  • Example: printer, lens control for camera

Design Considerations

  • Prevention of detection error: Avoid directing the detecting face towards external light sources.
  • Opaque board position: Install opaque board at least 1.6mm from the top of elements.
  • Degradation: Account for potential IRED emission degradation over time (approx. 50% over 5 years for long-term operation).

Manufacturing Guidelines

  • Soldering Method: Flow Soldering (below 260C, within 5s, one time). Hand soldering (below 350C, within 3s, one time).
  • Cleaning Instructions: Solvent cleaning (below 45C, 3 minutes or less). Ultrasonic cleaning is not recommended. Recommended solvents: Ethyl alcohol, Methyl alcohol, Isopropyl alcohol.
  • Presence of ODC: Product does not contain CFCs, Halon, Carbon tetrachloride, 1.1.1-Trichloroethane, PBBOs, PBBs, Lead, Mercury, Cadmium, Hexavalent chromium, PBBs, PBDEs.

Package Specification

  • Sleeve package: Max. 100 pcs. per sleeve, closed with stoppers. Max. 50 sleeves per case.

2410121933_SHARP-GP1S094HCZ0F_C920601.pdf

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