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Specifications
Slot Width:
5mm
Output Current:
30mA
Mfr. Part #:
RPI-579N1
Package:
DIP-4
Key Attributes
Model Number:
RPI-579N1
Product Description
RPI-579N1 Photointerrupter
The RPI-579N1 is a general-type photointerrupter designed for applications requiring heat resistance, small gap accuracy, and quick response times. It features a built-in filter against visible light and a kinked forming for ease of use. This component is suitable for use in printers, facsimiles, and AV equipment.
Product Attributes
- Brand: ROHM CO.,LTD.
- Origin: Japan
- Certifications: Not specified
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
| Forward voltage | VF | IF=50mA | - | 1.3 | 1.6 | V |
| Reverse current | IR | VR=10V | - | - | 10 | A |
| Dark current | ICEO | VCE=10V, IF=50mA | - | - | 0.5 | A |
| Peak sensitivity wavelength | P | VCE=10V | - | 800 | - | nm |
| Collector current | IC | IF=50mA | - | 0.1 | - | mA |
| Collector-emitter saturation voltage | VCE(sat) | VCE=5V, IF=20mA | - | - | 0.5 | V |
| Response time (Rise time) | tr | IF=20mA, IC=0.1mA | - | 10 | - | s |
| Response time (Fall time) | tf | VCC=5V, IF=20mA, RL=100 | - | 1 | - | s |
| Cut-off frequency | fC | - | - | - | 10 | MHz |
| Infrared light emitter diode Peak light emitting wavelength | P | - | - | 950 | - | nm |
| Infrared light emitter diode Maximum sensitivity wavelength | P | - | - | 800 | - | nm |
| Photo transistor Collector current | IC | VCC=5V, IC=1mA, RL=100 | - | - | - | mA |
| Photo transistor Collector-emitter voltage | VCEO | -25 to +85 | - | - | - | V |
| Photo transistor Power dissipation | PD | -40 to +85 | - | - | 50 | mW |
| Photo transistor Reverse voltage | VR | -40 to +85 | - | - | 5 | V |
| Photo transistor Forward current | IF | -40 to +85 | - | - | 80 | mA |
| Photo transistor Emitter-collector voltage | VECO | -40 to +85 | - | - | 4.5 | V |
| Photo transistor Collector power dissipation | PC | -40 to +85 | - | - | 30 | mW |
| Photo transistor Operating temperature | Topr | - | - | - | 80 | C |
| Photo transistor Storage temperature | Tstg | - | - | - | 80 | C |
| Photo transistor Soldering temperture | Tsol | 1mm from the body bottom | - | - | 260 / 3 | C / s |
1810151517_ROHM-RPI-579N1_C88269.pdf
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