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quality Epoxy resin encapsulated photo diode ROHM SML-H10PD2BT86 with InGaAs chip and peak wavelength 1550nm factory
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quality Epoxy resin encapsulated photo diode ROHM SML-H10PD2BT86 with InGaAs chip and peak wavelength 1550nm factory
quality Epoxy resin encapsulated photo diode ROHM SML-H10PD2BT86 with InGaAs chip and peak wavelength 1550nm factory
quality Epoxy resin encapsulated photo diode ROHM SML-H10PD2BT86 with InGaAs chip and peak wavelength 1550nm factory
>
Specifications
Mfr. Part #:
SML-H10PD2BT86
Package:
0805
Key Attributes
Model Number: SML-H10PD2BT86
Product Description

Product Overview

The SML-H10PD2BT86 is a Short-wavelength Infrared (SWIR) Surface Mount Photo Diode featuring InGaAs, encapsulated in black epoxy resin. It is designed for sensor applications.

Product Attributes

  • Brand: ROHM
  • Origin: Japan (indicated by "FOR ROHM ONLY" and "Country of origin" in lot marking example)
  • Material: InGaAs chip, Gold bonding wire, Epoxy resin encapsulation
  • Certifications: MSL Level 3

Technical Specifications

DescriptionSymbolConditionMin.Typ.Max.Units
Peak Sensitivity Wavelengthλp--1550-nm
ResponsivityRλp=1550nm-1.0-A/W
Dark CurrentIdVR=1V-(0.04)(0.8)μA
Terminal CapacitanceCtVR=1V, f=1MHz-3-pF
Photo CurrentIpVR=1V, E=1mW/cm²-(0.26)(0.31)μA
Reverse VoltageVR(Ta=25)--5V
Operation TemperatureTopr--25-+85
Storage TemperatureTstg--40-+100
Product Weight-Per piece, approx.-0.003-grm

2507221733_ROHM-SML-H10PD2BT86_C22466657.pdf

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