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Specifications
Collector - Emitter Voltage VCEO:
30V
Current - Dark(Id):
100nA
Peak Wavelength:
940nm
Operating Temperature:
-35℃~+85℃
Mfr. Part #:
L32ROPT1D1
Package:
Through Hole,D=2.9mm
Key Attributes
Model Number:
L32ROPT1D1
Product Description
Product Overview
The PARA LIGHT L32ROPT1D1 is a 3.0 mm phototransistor designed for high sensitivity and high-speed response. It features wide range collector currents and is Pb-free. This component is suitable for general electronic equipment applications.
Product Attributes
- Brand: PARA LIGHT
- Origin: Taiwan
- Material: Epoxy Resin (Resin), Sn Plating iron Alloy (Lead Frame), Silicon (Chip)
- Certifications: Pb FREE PRODUCTS
Technical Specifications
| Part Number | L32ROPT1D1 | Rev | B / 1 | |||
| Package Dimensions | 3.0 mm | Tolerance | 0.25mm (0.010 ") Unless otherwise specified | |||
| Features | WIDE RANGE COLLECTOR CURRENTS, LENSED FOR HIGH SENSITIVITY, HIGH-OUTPUT POWER, HIGH-SPEED RESPONSE, Pb FREE PRODUCTS | Chip Materials | SILICON | |||
| Absolute Maximum Rating (Ta = 25BC) | ||||||
| Symbol | Parameter | Max | Unit | |||
| PD | Power Dissipation Per Chip | 10 | mW | |||
| V(BR)CEO | Collector-Emitter Breakdown Voltage | 30 | V | |||
| Topr | Operating Temperature Range | -35 to 85 | BC | |||
| Tstg | Storage Temperature Range | -35 to 85 | BC | |||
| Electro-Optical Characteristics (Ta = 25BC) | ||||||
| Symbol | Parameter | Test Condition | Min. | Typ. | Max. | Unit |
| BVCEO | Collector-Emitter Breakdown Voltage | Ic = 100mA, Ee = 0 mw/cm2 | 30 | V | ||
| BVECO | Emitter-Collector Breakdown Voltage | IE=100mA, Ee= 0 mw/cm2 | 5 | V | ||
| ICEO | Collector Dark Current | VCE=10V, Ee=0 mw/cm2 | 100 | nA | ||
| VCE(S) | Collector-Emitter Saturation Voltage | IC=2mA, Ee=0.5 mw/cm2 | 0.4 | V | ||
| TR/TF | Rise / Fall Time | VCE=5V, IC=1mA, RL=1000 | 15/15 | uS | ||
| IC | On Stat Collector Current | VCE=5V, Ee=0.1 mw/cm2 | 3 | mA | ||
| lP | Spectral Sensitivity Wavelength | 900 | 940 | nm | ||
| BIN Requirements | Test Item | Test Condition | Requirement | |||
| Vceo | -Vceo | Ee=0,Ic=100A,5ms | Vceo>30V | |||
| Veco | -Veco | Ee=0,Ie=100A,5ms | Veco>5V | |||
| Iceo | -Iceo | Ee=0,Vce=10V,5ms | Iceo0.1A | |||
| Ic,A | -Ic,A | Ee=0.1mw/cm2,Vce=5V | 0.1-0.6mA | |||
| Ic,B | -Ic,B | Ee=0.1mw/cm2,Vce=5V | 0.6-1.6mA | |||
| Ic,C | -Ic,C | Ee=0.1mw/cm2,Vce=5V | 1.6-2.6mA | |||
| Ic,D | -Ic,D | Ee=0.1mw/cm2,Vce=5V | 2.6-3.6mA | |||
| Ic,E | -Ic,E | Ee=0.1mw/cm2,Vce=5V | 3.6-4.6mA |
2410121541_PARALIGHT-L32ROPT1D1_C5189508.pdf
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