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Specifications
Current - Collector(Ic):
1.2mA
Collector - Emitter Voltage VCEO:
30V
Current - Dark(Id):
100nA
Peak Wavelength:
940nm
Viewing Angle:
-
Operating Temperature:
-35℃~+85℃
Mfr. Part #:
L-51ROPT1D1
Package:
Through Hole,D=5mm
Key Attributes
Model Number:
L-51ROPT1D1
Product Description
Product Overview
The L-51ROPT1D1 is a 5.0 mm phototransistor from PARA LIGHT ELECTRONICS CO., LTD. It features wide range collector currents, a lens for high sensitivity, high output power, and high-speed response. This Pb-free product is designed for general electronic equipment applications.
Product Attributes
- Brand: PARA LIGHT ELECTRONICS CO., LTD.
- Origin: Taiwan
- Material (Resin): Epoxy Resin
- Material (Lead Frame): Sn Plating iron Alloy
- Certifications: Pb FREE PRODUCTS
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Collector-Emitter Breakdown Voltage | BVCEO | Ic = 100A, Ee = 0 mw/cm2 | 30 | V | ||
| Emitter-Collector Breakdown Voltage | BVECO | IE=100A, Ee= 0 mw/cm2 | 5 | V | ||
| Collector Dark Current | ICEO | VCE=10V, Ee=0 mw/cm2 | 100 | nA | ||
| Collector-Emitter Saturation Voltage | VCE(S) | IC=2mA, Ee=0.5 mw/cm2 | 0.4 | V | ||
| Rise / Fall Time | TR/TF | VCE=5V, IC=1mA, RL=1000 | 15/15 | uS | ||
| Collector Current | IC | VCE=5V, Ee=0.1 mw/cm2 | 1.2 | mA | ||
| Spectral Sensitivity Wavelength | P | 900 | 940 | nm | ||
| Power Dissipation Per Chip | PD | ( Ta = 25C ) | 10 | mW | ||
| Collector-Emitter Voltage | V(BR)CEO | ( Ta = 25C ) | 30 | V | ||
| Operating Temperature Range | Topr | -35C | 85C | |||
| Storage Temperature Range | Tstg | -35C | 85C |
2410121518_PARALIGHT-L-51ROPT1D1_C2962773.pdf
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