Product Overview
The OPB702 series offers non-contact reflective object sensing with a choice of infrared or red visible light emitting diodes paired with a NPN silicon phototransistor, photodarlington, or a base-emitter resistor for low light suppression. These sensors are designed with converging optical axes in a black plastic housing, providing focused sensitivity for various automation and safety applications. Custom electrical configurations, wiring, cabling, and connectors are available upon request.
Product Attributes
- Brand: OPTEK
- Housing Material: Black Plastic
- Certifications: RoHS
Technical Specifications
| Part Number | LED Type | Sensor Type | Peak Wavelength | Reflection Distance (inch [mm]) | Lead Length / Spacing | Storage & Operating Temperature Range | Input Diode Peak Forward Current | Input Diode Reverse Voltage | Input Diode Power Dissipation | Output Photosensor Collector-Emitter Voltage | Output Photosensor Power Dissipation | Output Phototransistor Collector-Emitter Breakdown Voltage | Output Phototransistor Emitter-Collector Breakdown Voltage | Output Phototransistor Emitter-Reverse Current | Output Phototransistor Collector Dark Current | Output Photosensor Collector-Emitter Saturation Voltage | Output Photosensor On-State Collector Current |
| OPB702 | Infrared LED | Transistor | 890 nm | 0.150" [3.81mm] | 0.400" / 0.100" | -40 C to +85 C | 50 mA | 2 V | 100 mW | 30 V | 100 mW | 30 V | 5 V | 100 nA | 0.4 V | 0.1 mA | |
| OPB702D | Infrared LED | Darlington | 890 nm | 0.150" [3.81mm] | 0.400" / 0.100" | 15 V | - | - | 250 nA | 1.1 V | 3.2 mA | ||||||
| OPB702R | Red VLED | Transistor and Rbe | 640 nm | 0.150" [3.81mm] | 0.400" / 0.100" | 30 V | 5 V | 100 A | 0.4 V | 0.4 mA | |||||||
| OPB702RR | Red VLED | Transistor and Rbe | 640 nm | 0.150" [3.81mm] | 0.400" / 0.100" | 30 V | - | - | 100 nA | 0.4 V | 0.2 mA |
2411220103_OPTEK-OPB702_C1526950.pdf
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