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quality Photodiode with 1 mm active area Opto Diode Corp ODD-1W featuring low dark current and capacitance factory
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quality Photodiode with 1 mm active area Opto Diode Corp ODD-1W featuring low dark current and capacitance factory
>
Specifications
Voltage - DC Reverse(Vr):
60V
Spectral Range:
400nm~1100nm
Dark Current:
200pA
Operating Temperature:
-55℃~+100℃
Mfr. Part #:
ODD-1W
Key Attributes
Model Number: ODD-1W
Product Description

Product Overview

The ODD-1W is a 1 mm photodiode housed in a TO-18 hermetic package. It offers a low-cost format with low dark current and low capacitance, making it suitable for various applications requiring sensitive light detection. Its electro-optical characteristics are optimized for performance at 25C, with a typical responsivity of 0.36 A/W at 632 nm and a dark current of 0.2 nA at a reverse voltage of 10 V. The photodiode also features a low capacitance of 0.2 pF at VR = 10 V and a fast rise time of 8 nsec.

Product Attributes

  • Brand: ITW Company
  • Package Type: TO-18 Hermetic Package
  • Active Area: 1 mm

Technical Specifications

Parameters Test Conditions Min Typ Max Units
Active Area 1.35 mm x 0.76 mm 1 mm
Responsivity @ 632 nm 0.36 0.4 A/W
Dark Current, Idr VR = 10 V 0.2 1 nA
Reverse Breakdown Voltage, VR IR = 10 A 25 60 Volts
Capacitance, C VR = 10 V 0.2 2 pF
Rise Time VR = 10 V 8 15 nsec
Series Resistance Vf = 1 V 25 60 Ohms

Thermal Parameters

Parameters Units
Storage and Operating Temperature Range -55C to 100C
Maximum Junction Temperature 100C
Lead Soldering Temperature 260C

1 1/16" from case for 10 seconds.


2411192357_Opto-Diode-Corp-ODD-1W_C6943456.pdf

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