Product Overview
The QSE113/QSE114 is a plastic silicon infrared phototransistor designed for applications requiring medium wide reception angles. Encapsulated in a black, infrared-transparent sidelooker package, this NPN phototransistor offers high sensitivity and features a daylight filter. It is matched with the QEE113 emitter and is suitable for various sensing and detection tasks.
Product Attributes
- Brand: ON Semiconductor (formerly Fairchild Semiconductor)
- Package Type: Sidelooker
- Package Material and Color: Black Epoxy
- Emitter Match: QEE113
- Features: Daylight Filter, High Sensitivity
- Marking: Blue dot on the top side
Technical Specifications
| Model | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| QSE113 / QSE114 | Operating Temperature (TOPR) | -40 | 100 | C | ||
| Storage Temperature (TSTG) | -40 | 100 | C | |||
| Soldering Temperature (Iron) (TSOL-I) | 5 sec | 240 | C | |||
| Soldering Temperature (Flow) (TSOL-F) | 10 sec | 260 | C | |||
| Collector Emitter Voltage (VCE) | 30 | V | ||||
| Emitter Collector Voltage (VEC) | 5 | V | ||||
| Power Dissipation (PD) | Derate linearly 1.33 mW/C above 25C | 100 | mW | |||
| Peak Sensitivity (PS) | 880 | nm | ||||
| Reception Angle () | 25 | |||||
| Collector Emitter Dark Current (ICEO) | VCE = 10 V, Ee = 0 | 100 | nA | |||
| Collector-Emitter Breakdown (BVCEO) | IC = 1 mA | 30 | V | |||
| QSE113 | On-State Collector Current (IC(ON)) | Ee = 0.5 mW/cm, VCE = 5 V | 0.25 | 1.50 | mA | |
| QSE114 | On-State Collector Current (IC(ON)) | Ee = 0.5 mW/cm, VCE = 5 V | 1.00 | mA | ||
| Saturation Voltage (VCE(SAT)) | Ee = 0.5 mW/cm, IC = 0.1 mA | 0.4 | V | |||
| Rise Time (tr) | IC = 1 mA, VCC = 5 V, RL = 100 | 8 | s | |||
| Fall Time (tf) | 8 | s |
2410121952_onsemi-QSE114_C898420.pdf
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