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quality High sensitivity infrared phototransistor in black epoxy package onsemi QSE114 for medium wide angle detection factory
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quality High sensitivity infrared phototransistor in black epoxy package onsemi QSE114 for medium wide angle detection factory
>
Specifications
Current - Collector(Ic):
-
Collector - Emitter Voltage VCEO:
30V
Current - Dark(Id):
100nA
Peak Wavelength:
880nm
Viewing Angle:
±25°
Operating Temperature:
-40℃~+100℃
Mfr. Part #:
QSE114
Package:
Through Hole,L=4.4mm
Key Attributes
Model Number: QSE114
Product Description

Product Overview

The QSE113/QSE114 is a plastic silicon infrared phototransistor designed for applications requiring medium wide reception angles. Encapsulated in a black, infrared-transparent sidelooker package, this NPN phototransistor offers high sensitivity and features a daylight filter. It is matched with the QEE113 emitter and is suitable for various sensing and detection tasks.

Product Attributes

  • Brand: ON Semiconductor (formerly Fairchild Semiconductor)
  • Package Type: Sidelooker
  • Package Material and Color: Black Epoxy
  • Emitter Match: QEE113
  • Features: Daylight Filter, High Sensitivity
  • Marking: Blue dot on the top side

Technical Specifications

Model Parameter Conditions Min. Typ. Max. Unit
QSE113 / QSE114 Operating Temperature (TOPR) -40 100 C
Storage Temperature (TSTG) -40 100 C
Soldering Temperature (Iron) (TSOL-I) 5 sec 240 C
Soldering Temperature (Flow) (TSOL-F) 10 sec 260 C
Collector Emitter Voltage (VCE) 30 V
Emitter Collector Voltage (VEC) 5 V
Power Dissipation (PD) Derate linearly 1.33 mW/C above 25C 100 mW
Peak Sensitivity (PS) 880 nm
Reception Angle () 25
Collector Emitter Dark Current (ICEO) VCE = 10 V, Ee = 0 100 nA
Collector-Emitter Breakdown (BVCEO) IC = 1 mA 30 V
QSE113 On-State Collector Current (IC(ON)) Ee = 0.5 mW/cm, VCE = 5 V 0.25 1.50 mA
QSE114 On-State Collector Current (IC(ON)) Ee = 0.5 mW/cm, VCE = 5 V 1.00 mA
Saturation Voltage (VCE(SAT)) Ee = 0.5 mW/cm, IC = 0.1 mA 0.4 V
Rise Time (tr) IC = 1 mA, VCC = 5 V, RL = 100 8 s
Fall Time (tf) 8 s

2410121952_onsemi-QSE114_C898420.pdf

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