ON Semiconductor QSD2030 Plastic Silicon Photodiode
The QSD2030 is a PIN photodiode housed in a clear epoxy T-1 3/4 package with a 5mm lens diameter. It offers a wide reception angle of 40, high sensitivity, and peak sensitivity at 880nm. The photodiode is suitable for various applications requiring precise light detection.
Product Attributes
- Brand: ON Semiconductor
- Package Type: T-1 3/4 (5mm lens diameter)
- Package Material and Color: Clear epoxy
- Peak Sensitivity: 880nm
- Radiant Sensitive Area: 1.245mm x 1.245mm
Technical Specifications
| Parameter | Test Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|
| Operating Temperature | -40 | 100 | C | ||
| Storage Temperature | -40 | 100 | C | ||
| Soldering Temperature (Iron) | (2,3,4) | 240 | for 5 sec | C | |
| Soldering Temperature (Flow) | (2,3) | 260 | for 10 sec | C | |
| Reverse Breakdown Voltage | 50 | V | |||
| Power Dissipation | (1) | 100 | mW | ||
| Peak Sensitivity Wavelength | 880 | nm | |||
| Wavelength Sensitivity Range | 400 | 1100 | nm | ||
| Reception Angle | 20 | ||||
| Forward Voltage | IF = 80mA | 1.3 | V | ||
| Reverse Dark Current | VR = 10V, Ee = 0 | 10 | nA | ||
| Reverse Light Current | Ee = 0.5mW/cm, VR = 5V, = 950nm | 15 | 25 | A | |
| Open Circuit Voltage | Ee = 0.5mW/cm, = 880nm | 420 | mV | ||
| Temperature Coefficient of VO | +0.6 | mV / K | |||
| Short Circuit Current | Ee = 0.5mW/cm, = 880nm | 50 | A | ||
| Temperature Coefficient of ISC | +0.3 | % / K | |||
| Capacitance | VR = 0, f = 1MHz, Ee = 0 | 15 | pF | ||
| Rise Time | VR = 5V, RL = 50, = 950nm | 5 | ns | ||
| Fall Time | 5 | ns |
2411220102_onsemi-QSD2030_C184368.pdf
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