ON Semiconductor J-Series SiPM Sensors
ON Semiconductor's J-Series Silicon Photomultipliers (SiPM) are high-performance, low-light sensors featuring high Photon Detection Efficiency (PDE) and excellent timing resolution. Utilizing a P-on-N silicon foundry process and Through Silicon Via (TSV) packaging, these sensors offer minimal deadspace and compatibility with industry-standard reflow soldering. They provide the practical advantages of solid-state technology, including low operating voltage, excellent temperature stability, robustness, compactness, output uniformity, and cost-effectiveness. The J-Series sensors are ideal for applications requiring precise light detection and timing.
Product Attributes
- Brand: ON Semiconductor
- Origin: Not specified
- Material: Silicon, Glass Cover
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Parameter | 30020 | 30035 | 40035 | 60035 | Unit |
| Breakdown Voltage (Vbr) | 24.2 - 24.7 | V | |||
| Operating Voltage (Vop) | 25.2 - 30.7 | V | |||
| Spectral Range | 200 - 900 | nm | |||
| Peak PDE Wavelength ( p) | 420 | nm | |||
| Active Area | 3.07 x 3.07 | 3.93 x 3.93 | 6.07 x 6.07 | mm2 | |
| No. of Microcells | 14,410 | 5,676 | 9,260 | 22,292 | |
| Microcell Fill Factor | 62% | 75% | 75% | 75% | |
| PDE (+2.5 V OV) | 30 | 38 | 38 | 38 | % |
| PDE (+5 V / +6 V OV) | 38 | 50 | 50 | 50 | % |
| Dark Count Rate | 50 - 125 | 50 - 150 | 50 - 150 | 50 - 150 | kHz/mm2 |
| Gain (anode-cathode) (+2.5 V OV) | 1.0 x 106 | 2.9 x 106 | 2.9 x 106 | 2.9 x 106 | |
| Gain (anode-cathode) (+5 V / +6 V OV) | 1.9 x 106 | 6.3 x 106 | 6.3 x 106 | 6.3 x 106 | |
| Dark Current (typical) (+2.5 V OV) | 0.1 | 0.23 | 0.35 | 0.9 | A |
| Dark Current (typical) (+5 V / +6 V OV) | 0.45 | 1.9 | 3.0 | 7.5 | A |
| Dark Current (maximum) (+2.5 V OV) | 0.2 | 0.31 | 0.45 | 1.25 | A |
| Dark Current (maximum) (+5 V / +6 V OV) | 0.72 | 3.00 | 4.0 | 12.0 | A |
| Rise Time (anode-cathode output) (+2.5 V OV) | 130 | 90 | 90 | 180 | ps |
| Rise Time (anode-cathode output) (+5 V / +6 V OV) | 160 | 110 | 110 | 250 | ps |
| Microcell Recharge Time Constant (+2.5 V OV) | 15 | 45 | 48 | 50 | ns |
| Capacitance (anode output) | 1040 | 1070 | 1800 | 4140 | pF |
| Capacitance (fast output) | 50 | 40 | 70 | 160 | pF |
| Fast Output Pulse Width (FWHM) | 1.4 | 1.5 | 1.7 | 3.0 | ns |
| Crosstalk (+2.5 V OV) | 2.5 - 7.5 | 8 | 8 | 8 | % |
| Crosstalk (+5 V / +6 V OV) | 2.5 - 7.5 | 25 | 25 | 25 | % |
| Afterpulsing | 0.75 - 5.0 | 0.75 - 5.0 | 0.75 - 5.0 | 0.75 - 5.0 | % |
| Package Dimensions | 3.16 x 3.16 | 3.16 x 3.16 | 4.00 x 4.00 | 6.13 x 6.13 | mm2 |
| Recommended Operating Temperature Range | -40 to +85 | C | |||
| Maximum Average Current | 10 | 10 | 10 | 15 | mA |
2304140030_onsemi-MICROFJ-60035-TSV-TR1_C603296.pdf
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