Reflective Object Sensor OPB750N, OPB750T, OPB755TZ, OPB755TAZ
The OPB750 and OPB755 series reflective object sensors feature an integrated Light Emitting Diode (LED) and phototransistor output designed to reduce low-level light while maintaining high-level light gain. The OPB750N and OPB750T are designed for PCBoard mounting with 0.40" (10 mm) leads. The OPB755TZ and OPB755TAZ are for remote mounting, with the OPB755TZ including a 12" (305 mm) UL rated wire and AMP connector, and the OPB755TAZ featuring a 24" (610 mm) UL rated wire without a connector. The OPB750T, OPB755TZ, and OPB755TAZ have two mounting tabs, while the OPB750N has none. Photologic output versions are available in the OPB760 and OPB770 series. Custom configurations are also available.
Applications:
- Non-contact reflective object sensor
- Assembly line automation
- Machine automation
- Machine safety
- End of travel sensor
- Door sensor
Features:
- High contrast ratio (1,000 :1 minimum)
- Low cost plastic housing
- PCBoard mount (OPB750N, OPB750T)
- 12 (305 mm) 26 AWG wires (OPB755TZ)
- Available with no-mounting tabs N package
- Available with two mounting tabs T package
Product Attributes:
- Brand: TT electronics plc | OPTEK Technology
- Origin: Plano, TX
- Certifications: RoHS
Technical Specifications:
| Part Number | LED Peak Wavelength | Sensor | Reflection Distance | Lead Length | Tabs | Wire Length | Connector |
| OPB750N | 890 nm | Transistor & Rbe | 0.080" (2.03 mm) | 0.40" | No tabs | - | - |
| OPB750T | 890 nm | Transistor & Rbe | 0.080" (2.03 mm) | 0.40" | 2 tabs | - | - |
| OPB755NZ | 890 nm | Transistor & Rbe | 0.080" (2.03 mm) | - | No tabs | 12" / 26 AWG | AMP # 3-640442-5 |
| OPB755TZ | 890 nm | Transistor & Rbe | 0.080" (2.03 mm) | - | 2 tabs | 12" / 26 AWG | AMP # 3-640442-5 |
| OPB755TAZ | 890 nm | Transistor & Rbe | 0.080" (2.03 mm) | - | 2 tabs | 24" / 26 AWG | NO connector |
Absolute Maximum Ratings:
| Parameter | OPB750N, OPB750T | OPB755TZ, OPB755TAZ | Units |
| Operating and Storage Temperature Range | -40 C to + 85 C | -40 C to + 80 C | C |
| Lead Soldering Temperature(1) | 260 C | C | |
| Input Diode Forward DC Current | 50 | mA | |
| Input Diode Peak Forward Current (1 pulse width, 300 pps) | 1 | A | |
| Input Diode Reverse DC Voltage | 2 | V | |
| Input Diode Power Dissipation | 100 | mW | |
| Output Phototransistor Collector-Emitter Voltage | 24 | V | |
| Output Phototransistor Collector DC Current | 30 | V | |
| Output Phototransistor Power Dissipation(3) | 100 | mW | |
Electrical Characteristics:
| Symbol | Parameter | Min | Typ | Max | Units | Test Conditions |
| Input Diode | ||||||
| VF | Forward Voltage | - | - | 1.8 | V | IF = 40 mA |
| IR | Reverse Current | - | - | 100 | A | VR = 2 V |
| Output Phototransistor | ||||||
| V(BR)CEO | Collector-Emitter Breakdown Voltage | 24 | - | - | V | IC = 100 A |
| ICEO | Collector Dark Current | - | - | 100 | nA | VCE = 10 V, IF = 0, H = 0 |
| VCE(SAT) | Saturation Voltage | - | - | .40 | V | IC = 150 A, IF = 30 mA, d = 0.22 |
| IC(OFF) | Off-State Collector Current(5) | - | - | 250 | nA | IF = 30 mA, VCE = 5 V, d = 0.08, 0.15, 0.22 |
| IC(ON) | On-State Collector Current(4) | 500 | 375 | 250 | A | IF = 30 mA, VCE = 5 V, d = 0.08 |
| - | - | - | A | IF = 30 mA, VCE = 5 V, d = 0.15 | ||
| - | - | - | A | IF = 30 mA, VCE = 5 V, d = 0.22 |
2504101957_OPTEK-OPB755TAZ_C17372719.pdf
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