Name: Fast Response Silicon Photomultiplier Sensor onsemi MICROFC-10035-SMT-TR with Low Dark Count Rate and High PDE
Brand: Changsha Purple Horn E-Commerce Co., Ltd.
SKU: MICROFC-10035-SMT-TR
Availability: InStock

quality Fast Response Silicon Photomultiplier Sensor onsemi MICROFC-10035-SMT-TR with Low Dark Count Rate and High PDE factory

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Specifications

Voltage - DC Reverse(Vr):

24.7V

Spectral Range:

300nm~950nm

Dark Current:

15nA

Operating Temperature:

-40℃~+85℃

Mfr. Part #:

MICROFC-10035-SMT-TR

Package:

SMD

Key Attributes

Model Number: MICROFC-10035-SMT-TR

Product Description

Product Overview

The C-Series low-light sensors from onsemi are Silicon Photomultipliers (SiPM) designed for high-gain, single-photon sensitivity. They offer an industry-leading low dark-count rate combined with high Photon Detection Efficiency (PDE). These sensors are ideal for ultrafast timing applications with a fast output rise time of 300 ps and pulse width of 600 ps. Available in 1 mm, 3 mm, and 6 mm sensor sizes, they feature a 4-side tileable surface mount (SMT) package compatible with lead-free reflow soldering. C-Series SiPMs provide performance comparable to conventional PMTs but with the advantages of solid-state technology, including low operating voltage, excellent temperature stability, robustness, compactness, output uniformity, and low cost.

Product Attributes

Brand: onsemi
Origin: Silicon
Material: Solid-state
Certifications: Lead-free, reflow soldering process compatible

Technical Specifications

Parameter	Sensor Size	Microcell Size	Min.	Typ.	Max.	Units	Overvoltage
Breakdown Voltage (Vbr)	1 mm	10, 20, 35	24.2	24.7		V
Breakdown Voltage (Vbr)	3 mm	20, 35, 50				V
Breakdown Voltage (Vbr)	6 mm	35				V
Recommended overvoltage Range	1 mm	10, 20, 35	1.0	5.0		V	(Voltage above Vbr)
Recommended overvoltage Range	3 mm	20, 35, 50				V	(Voltage above Vbr)
Recommended overvoltage Range	6 mm	35				V	(Voltage above Vbr)
Spectral Range	1 mm	10, 20, 35	300		950	nm
Spectral Range	3 mm	20, 35, 50				nm
Spectral Range	6 mm	35				nm
Peak Wavelength ( p)	1 mm	10, 20, 35		420		nm
Peak Wavelength ( p)	3 mm	20, 35, 50				nm
Peak Wavelength ( p)	6 mm	35				nm
PDE at p	1 mm	10	14			%	Vbr + 2.5 V
PDE at p	1 mm	20	24			%	Vbr + 2.5 V
PDE at p	1 mm	35	31			%	Vbr + 2.5 V
PDE at p	1 mm	10	18			%	Vbr + 5.0 V
PDE at p	1 mm	20	31			%	Vbr + 5.0 V
PDE at p	1 mm	35	41			%	Vbr + 5.0 V
PDE at p	3 mm	20	24			%	Vbr + 2.5 V
PDE at p	3 mm	35	31			%	Vbr + 2.5 V
PDE at p	3 mm	50	35			%	Vbr + 2.5 V
PDE at p	3 mm	20	31			%	Vbr + 5.0 V
PDE at p	3 mm	35	41			%	Vbr + 5.0 V
PDE at p	3 mm	50	47			%	Vbr + 5.0 V
PDE at p	6 mm	35	31			%	Vbr + 2.5 V
PDE at p	6 mm	35	41			%	Vbr + 5.0 V
Gain (anode to cathode readout)	1 mm	10	2 10⁵				Vbr + 2.5 V
Gain (anode to cathode readout)	1 mm	20	1 10⁶				Vbr + 2.5 V
Gain (anode to cathode readout)	1 mm	35	3 10⁶				Vbr + 2.5 V
Gain (anode to cathode readout)	3 mm	20	1 10⁶				Vbr + 2.5 V
Gain (anode to cathode readout)	3 mm	35	3 10⁶				Vbr + 2.5 V
Gain (anode to cathode readout)	3 mm	50	6 10⁶				Vbr + 2.5 V
Gain (anode to cathode readout)	6 mm	35	3 10⁶				Vbr + 2.5 V
Dark Current	1 mm	10	1		3	nA	Vbr + 2.5 V
Dark Current	1 mm	20	5		16	nA	Vbr + 2.5 V
Dark Current	1 mm	35	15		49	nA	Vbr + 2.5 V
Dark Current	3 mm	20	50		142	nA	Vbr + 2.5 V
Dark Current	3 mm	35	154		443	nA	Vbr + 2.5 V
Dark Current	3 mm	50	319		914	nA	Vbr + 2.5 V
Dark Current	6 mm	35	618		1750	nA	Vbr + 2.5 V
Dark Count Rate	1 mm	10	30		96	kHz	Vbr + 2.5 V
Dark Count Rate	1 mm	20	30		96	kHz	Vbr + 2.5 V
Dark Count Rate	1 mm	35	30		96	kHz	Vbr + 2.5 V
Dark Count Rate	3 mm	20	300		860	kHz	Vbr + 2.5 V
Dark Count Rate	3 mm	35	300		860	kHz	Vbr + 2.5 V
Dark Count Rate	3 mm	50	300		860	kHz	Vbr + 2.5 V
Dark Count Rate	6 mm	35	1200		3400	kHz	Vbr + 2.5 V
Rise Time Fast Output	1 mm	10, 20, 35		0.3		ns
Rise Time Fast Output	3 mm	20, 35, 50		0.6		ns
Rise Time Fast Output	6 mm	35		1.0		ns
Signal Pulse Width Fast Output (FWHM)	1 mm	10, 20, 35		0.6		ns
Signal Pulse Width Fast Output (FWHM)	3 mm	20, 35, 50		1.5		ns
Signal Pulse Width Fast Output (FWHM)	6 mm	35		3.2		ns
Microcell recharge time constant	1 mm	10		5		ns
Microcell recharge time constant	1 mm	20	23			ns
Microcell recharge time constant	1 mm	35	82			ns
Microcell recharge time constant	3 mm	20	23			ns
Microcell recharge time constant	3 mm	35	82			ns
Microcell recharge time constant	3 mm	50	159			ns
Microcell recharge time constant	6 mm	35	95			ns
Capacitance (anodecathode)	1 mm	10	50			pF	Vbr + 2.5 V
Capacitance (anodecathode)	1 mm	20	90			pF	Vbr + 2.5 V
Capacitance (anodecathode)	1 mm	35	100			pF	Vbr + 2.5 V
Capacitance (anodecathode)	3 mm	20	770			pF	Vbr + 2.5 V
Capacitance (anodecathode)	3 mm	35	850			pF	Vbr + 2.5 V
Capacitance (anodecathode)	3 mm	50	920			pF	Vbr + 2.5 V
Capacitance (anodecathode)	6 mm	35	3400			pF	Vbr + 2.5 V
Capacitance (fast terminal to cathode)	1 mm	10	1			pF	Vbr + 2.5 V
Capacitance (fast terminal to cathode)	1 mm	20	1			pF	Vbr + 2.5 V
Capacitance (fast terminal to cathode)	1 mm	35	1			pF	Vbr + 2.5 V
Capacitance (fast terminal to cathode)	3 mm	20	20			pF	Vbr + 2.5 V
Capacitance (fast terminal to cathode)	3 mm	35	12			pF	Vbr + 2.5 V
Capacitance (fast terminal to cathode)	3 mm	50	7			pF	Vbr + 2.5 V
Capacitance (fast terminal to cathode)	6 mm	35	48			pF	Vbr + 2.5 V
Temperature dependence of Vbr	1 mm	10, 20, 35		21.5		mV/C
Temperature dependence of Vbr	3 mm	20, 35, 50				mV/C
Temperature dependence of Vbr	6 mm	35				mV/C
Temperature dependence of Gain	1 mm	10, 20, 35		-0.8		%/C
Temperature dependence of Gain	3 mm	20, 35, 50				%/C
Temperature dependence of Gain	6 mm	35				%/C
Crosstalk	1 mm	10	0.6			%	Vbr + 2.5 V
Crosstalk	1 mm	20	3			%	Vbr + 2.5 V
Crosstalk	1 mm	35	7			%	Vbr + 2.5 V
Crosstalk	3 mm	20	3			%	Vbr + 2.5 V
Crosstalk	3 mm	35	7			%	Vbr + 2.5 V
Crosstalk	3 mm	50	10			%	Vbr + 2.5 V
Crosstalk	6 mm	35	7			%	Vbr + 2.5 V
Afterpulsing	1 mm	10	0.2			%	Vbr + 2.5 V
Afterpulsing	1 mm	20	0.2			%	Vbr + 2.5 V
Afterpulsing	1 mm	35	0.2			%	Vbr + 2.5 V
Afterpulsing	3 mm	20	0.2			%	Vbr + 2.5 V
Afterpulsing	3 mm	35	0.2			%	Vbr + 2.5 V
Afterpulsing	3 mm	50	0.6			%	Vbr + 2.5 V
Afterpulsing	6 mm	35	0.2			%	Vbr + 2.5 V
Active area	1 mm	10010, 10020, 10035	1 1 mm²
Active area	3 mm	30020, 30035, 30050	3 3 mm²
Active area	6 mm	60035	6 6 mm²
No. of microcells	1 mm	10010	2880
No. of microcells	1 mm	10020	1296
No. of microcells	1 mm	10035	504
No. of microcells	3 mm	30020	10998
No. of microcells	3 mm	30035	4774
No. of microcells	3 mm	30050	2668
No. of microcells	6 mm	60035	18980
Microcell fill factor	1 mm	10010	28%
Microcell fill factor	1 mm	10020	48%
Microcell fill factor	1 mm	10035	64%
Microcell fill factor	3 mm	30020	48%
Microcell fill factor	3 mm	30035	64%
Microcell fill factor	3 mm	30050	72%
Microcell fill factor	6 mm	60035	64%
Package dimensions	1 mm	10010, 10020, 10035	1.5 1.8 mm²
Package dimensions	3 mm	30020, 30035, 30050	4 4 mm²
Package dimensions	6 mm	60035	7 7 mm²
Recommended operating temperature range			-40C		+85C
Maximum storage temperature					+105C
Soldering conditions							Lead-free, reflow soldering process compatible (MSL 3 for tape & reel quantities; MSL 4 for tape only qty.)
Encapsulant type							Clear transfer molding compound
Encapsulant refractive Index			1.59			@ 420 nm
Maximum current levels	1 mm	10010, 10020, 10035			6 mA
Maximum current levels	3 mm	30020, 30035, 30050			15 mA
Maximum current levels	6 mm	60035			20 mA

2411220452_onsemi-MICROFC-10035-SMT-TR_C891563.pdf

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