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quality Compact and Robust Silicon Photomultiplier onsemi MICROFJ-30035-TSV-TR for Advanced Light Detection factory
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quality Compact and Robust Silicon Photomultiplier onsemi MICROFJ-30035-TSV-TR for Advanced Light Detection factory
quality Compact and Robust Silicon Photomultiplier onsemi MICROFJ-30035-TSV-TR for Advanced Light Detection factory
quality Compact and Robust Silicon Photomultiplier onsemi MICROFJ-30035-TSV-TR for Advanced Light Detection factory
>
Specifications
Voltage - DC Reverse(Vr):
24.7V
Spectral Range:
200nm~900nm
Dark Current:
1.9uA
Operating Temperature:
-40℃~+85℃
Mfr. Part #:
MICROFJ-30035-TSV-TR
Package:
WBGA-8
Key Attributes
Model Number: MICROFJ-30035-TSV-TR
Product Description

Product Description

The onsemi J-Series Silicon Photomultipliers (SiPM) are low-light sensors designed for high Photon Detection Efficiency (PDE) and excellent timing resolution. Utilizing a P-on-N silicon foundry process and a Through Silicon Via (TSV) package, these sensors minimize dead space and are compatible with industry-standard reflow soldering. The J-Series SiPMs offer the advantages of solid-state technology, including low operating voltage, superior temperature stability, robustness, compactness, output uniformity, and cost-effectiveness. They are available in 3 mm, 4 mm, and 6 mm sizes and are suitable for applications requiring sensitive light detection and precise timing.

Product Attributes

  • Brand: onsemi
  • Origin: Semiconductor Components Industries, LLC
  • Material: Silicon, Glass Cover
  • Certifications: MSL3* (Tape & reel), MSL4* (Cut tape)

Technical Specifications

ModelActive AreaNo. of MicrocellsMicrocell Fill FactorBreakdown Voltage (Vbr) (Typical)Operating Voltage (Vop)Spectral RangePeak PDE Wavelength ( p)PDE (Typical @ Vbr+6V)Dark Count Rate (Typical)Gain (anode-cathode)Dark Current (Typical)Rise Time (anode-cathode output)Microcell Recharge Time ConstantCapacitance (anode output)Capacitance (fast output)Fast Output Pulse Width (FWHM)Crosstalk (Typical @ Vbr+6V)Afterpulsing (Typical @ Vbr+6V)Package DimensionsRecommended Operating Temperature RangeMaximum Average Current
300203.07 3.07 mm214,41062%24.7 V25.2 V - 30.7 V200 - 900 nm420 nm50%125 kHz/mm21.9 1060.45 A160 ps15 ns1040 pF50 pF1.4 ns7.5%5.0%3.16 3.16 mm2-40C - +85C10 mA
300353.07 3.07 mm25,67675%24.7 V25.2 V - 30.7 V200 - 900 nm420 nm50%150 kHz/mm26.3 1061.9 A110 ps48 ns1800 pF70 pF1.7 ns25%5.0%3.16 3.16 mm2-40C - +85C10 mA
400353.93 3.93 mm29,26075%24.7 V25.2 V - 30.7 V200 - 900 nm420 nm50%150 kHz/mm26.3 1063.0 A110 ps50 ns1800 pF70 pF1.7 ns25%5.0%4.00 4.00 mm2-40C - +85C10 mA
600356.07 6.07 mm222,29275%24.7 V25.2 V - 30.7 V200 - 900 nm420 nm50%150 kHz/mm26.3 1067.5 A250 ps50 ns4140 pF160 pF3.0 ns25%5.0%6.13 6.13 mm2-40C - +85C15 mA

2410010231_onsemi-MICROFJ-30035-TSV-TR_C891567.pdf

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