Name: Low light sensor onsemi MICROFC-10020-SMT-TR1 silicon photomultiplier with high gain and fast timing
Brand: Changsha Purple Horn E-Commerce Co., Ltd.
SKU: MICROFC-10020-SMT-TR1
Availability: InStock

quality Low light sensor onsemi MICROFC-10020-SMT-TR1 silicon photomultiplier with high gain and fast timing factory

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Specifications

Measurement Type:

Light Intensity

Operating Temperature:

-40℃~+85℃

Mfr. Part #:

MICROFC-10020-SMT-TR1

Package:

DFN-4(1.5x1.8)

Key Attributes

Model Number: MICROFC-10020-SMT-TR1

Product Description

Product Overview

The ON Semiconductor C-Series Silicon Photomultipliers (SiPM) are low-light sensors designed for high-gain, single-photon sensitivity across the UV-to-visible spectrum. They offer performance comparable to conventional PMTs with the practical advantages of solid-state technology, including low operating voltage, excellent temperature stability, robustness, compactness, output uniformity, and cost-effectiveness. These sensors feature an industry-leading low dark-count rate and high Photon Detection Efficiency (PDE). For ultrafast timing applications, the C-Series sensors provide a fast output with a rise time as low as 300 ps and a pulse width of 600 ps. They are available in various sensor sizes (1 mm, 3 mm, and 6 mm) and are packaged in a 4-side tileable surface mount (SMT) package compatible with lead-free reflow soldering processes. Recommended for users requiring plug-and-play evaluation with optimum timing performance is the SMA Biasing Board (MicroFC-SMA-XXXXX), while the SMT Pin Adapter (MicroFC-SMTPA-XXXXX) offers a quick evaluation method without specialized soldering.

Product Attributes

Brand: ON Semiconductor
Origin: Semiconductor Components Industries, LLC
Package Type: 4-side tileable surface mount (SMT)
Soldering Compatibility: Lead-free, reflow soldering processes
Certifications: MSL 3 for tape & reel quantities; MSL 4 for tape only qty.

Technical Specifications

Sensor Size	Microcell Size	Parameter	Overvoltage	Min.	Typ.	Max.	Units
1 mm	10 , 20 , 35	Breakdown Voltage (Vbr)		24.2	24.7		V
3 mm	20 , 35 , 50	Breakdown Voltage (Vbr)					V
6 mm	35	Breakdown Voltage (Vbr)					V
1 mm	10 , 20 , 35	Recommended overvoltage Range		1.0		5.0	V
3 mm	20 , 35 , 50	Recommended overvoltage Range					V
6 mm	35	Recommended overvoltage Range					V
1 mm	10 , 20 , 35	Spectral Range		300		950	nm
3 mm	20 , 35 , 50	Spectral Range					nm
6 mm	35	Spectral Range					nm
1 mm	10 , 20 , 35	Peak Wavelength ( p)			420		nm
3 mm	20 , 35 , 50	Peak Wavelength ( p)					nm
6 mm	35	Peak Wavelength ( p)					nm
1 mm	10	PDE at p	Vbr + 2.5 V	14			%
1 mm	20	PDE at p	Vbr + 2.5 V		24		%
1 mm	35	PDE at p	Vbr + 2.5 V		31		%
1 mm	10	PDE at p	Vbr + 5.0 V	18			%
1 mm	20	PDE at p	Vbr + 5.0 V		31		%
1 mm	35	PDE at p	Vbr + 5.0 V		41		%
3 mm	20	PDE at p	Vbr + 2.5 V	24			%
3 mm	35	PDE at p	Vbr + 2.5 V		31		%
3 mm	50	PDE at p	Vbr + 2.5 V		35		%
3 mm	20	PDE at p	Vbr + 5.0 V	31			%
3 mm	35	PDE at p	Vbr + 5.0 V		41		%
3 mm	50	PDE at p	Vbr + 5.0 V		47		%
6 mm	35	PDE at p	Vbr + 2.5 V	31			%
6 mm	35	PDE at p	Vbr + 5.0 V	41			%
1 mm	10	Gain (anode to cathode readout)	Vbr + 2.5 V		2 10⁵
1 mm	20	Gain (anode to cathode readout)	Vbr + 2.5 V		1 10⁶
1 mm	35	Gain (anode to cathode readout)	Vbr + 2.5 V		3 10⁶
3 mm	20	Gain (anode to cathode readout)	Vbr + 2.5 V		1 10⁶
3 mm	35	Gain (anode to cathode readout)	Vbr + 2.5 V		3 10⁶
3 mm	50	Gain (anode to cathode readout)	Vbr + 2.5 V		6 10⁶
6 mm	35	Gain (anode to cathode readout)	Vbr + 2.5 V		3 10⁶
1 mm	10	Dark Current	Vbr + 2.5 V	1		3	nA
1 mm	20	Dark Current	Vbr + 2.5 V	5		16	nA
1 mm	35	Dark Current	Vbr + 2.5 V	15		49	nA
3 mm	20	Dark Current	Vbr + 2.5 V	50		142	nA
3 mm	35	Dark Current	Vbr + 2.5 V	154		443	nA
3 mm	50	Dark Current	Vbr + 2.5 V	319		914	nA
6 mm	35	Dark Current	Vbr + 2.5 V	618		1750	nA
1 mm	10 , 20 , 35	Dark Count Rate	Vbr + 2.5 V	30		96	kHz
3 mm	20 , 35 , 50	Dark Count Rate	Vbr + 2.5 V	300		860	kHz
6 mm	35	Dark Count Rate	Vbr + 2.5 V	1200		3400	kHz
1 mm	10 , 20 , 35	Rise Time Fast Output			0.3		ns
3 mm	20 , 35 , 50	Rise Time Fast Output			0.6		ns
6 mm	35	Rise Time Fast Output			1.0		ns
1 mm	10 , 20 , 35	Signal Pulse Width Fast Output (FWHM)			0.6		ns
3 mm	20 , 35 , 50	Signal Pulse Width Fast Output (FWHM)			1.5		ns
6 mm	35	Signal Pulse Width Fast Output (FWHM)			3.2		ns
1 mm	10	Microcell recharge time constant			5		ns
1 mm	20	Microcell recharge time constant			23		ns
1 mm	35	Microcell recharge time constant			82		ns
3 mm	20	Microcell recharge time constant			23		ns
3 mm	35	Microcell recharge time constant			82		ns
3 mm	50	Microcell recharge time constant			159		ns
6 mm	35	Microcell recharge time constant			95		ns
1 mm	10	Capacitance (anodecathode)	Vbr + 2.5 V		50		pF
1 mm	20	Capacitance (anodecathode)	Vbr + 2.5 V		90		pF
1 mm	35	Capacitance (anodecathode)	Vbr + 2.5 V		100		pF
3 mm	20	Capacitance (anodecathode)	Vbr + 2.5 V		770		pF
3 mm	35	Capacitance (anodecathode)	Vbr + 2.5 V		850		pF
3 mm	50	Capacitance (anodecathode)	Vbr + 2.5 V		920		pF
6 mm	35	Capacitance (anodecathode)	Vbr + 2.5 V		3400		pF
1 mm	10	Capacitance (fast terminal to cathode)	Vbr + 2.5 V		1		pF
1 mm	20	Capacitance (fast terminal to cathode)	Vbr + 2.5 V		1		pF
1 mm	35	Capacitance (fast terminal to cathode)	Vbr + 2.5 V		1		pF
3 mm	20	Capacitance (fast terminal to cathode)	Vbr + 2.5 V		20		pF
3 mm	35	Capacitance (fast terminal to cathode)	Vbr + 2.5 V		12		pF
3 mm	50	Capacitance (fast terminal to cathode)	Vbr + 2.5 V		7		pF
6 mm	35	Capacitance (fast terminal to cathode)	Vbr + 2.5 V		48		pF
1 mm	10 , 20 , 35	Temperature dependence of Vbr			21.5		mV/C
3 mm	20 , 35 , 50	Temperature dependence of Vbr					mV/C
6 mm	35	Temperature dependence of Vbr					mV/C
1 mm	10 , 20 , 35	Temperature dependence of Gain		-0.8			%/C
3 mm	20 , 35 , 50	Temperature dependence of Gain					%/C
6 mm	35	Temperature dependence of Gain					%/C
1 mm	10	Crosstalk	Vbr + 2.5 V	0.6			%
1 mm	20	Crosstalk	Vbr + 2.5 V		3		%
1 mm	35	Crosstalk	Vbr + 2.5 V		7		%
3 mm	20	Crosstalk	Vbr + 2.5 V		3		%
3 mm	35	Crosstalk	Vbr + 2.5 V		7		%
3 mm	50	Crosstalk	Vbr + 2.5 V		10		%
6 mm	35	Crosstalk	Vbr + 2.5 V		7		%
1 mm	10	Afterpulsing	Vbr + 2.5 V	0.2			%
1 mm	20	Afterpulsing	Vbr + 2.5 V		0.2		%
1 mm	35	Afterpulsing	Vbr + 2.5 V		0.2		%
3 mm	20	Afterpulsing	Vbr + 2.5 V		0.2		%
3 mm	35	Afterpulsing	Vbr + 2.5 V		0.2		%
3 mm	50	Afterpulsing	Vbr + 2.5 V		0.6		%
6 mm	35	Afterpulsing	Vbr + 2.5 V		0.2		%
1 mm	10010, 10020, 10035	Active area		1 1 mm²
3 mm	30020, 30035, 30050	Active area		3 3 mm²
6 mm	60035	Active area		6 6 mm²
1 mm	10010: 2880 10020: 1296 10035: 504	No. of microcells
3 mm	30020: 10998 30035: 4774 30050: 2668	No. of microcells
6 mm	60035: 18980	No. of microcells
1 mm	10010: 28% 10020: 48% 10035: 64%	Microcell fill factor
3 mm	30020: 48% 30035: 64% 30050: 72%	Microcell fill factor
6 mm	60035: 64%	Microcell fill factor
1 mm	10010, 10020, 10035	Package dimensions		1.5 1.8 mm²
3 mm	30020, 30035, 30050	Package dimensions		4 4 mm²
6 mm	60035	Package dimensions		7 7 mm²
		Recommended operating temperature range		-40C		+85C
		Maximum storage temperature				+105C
1 mm	10010, 10020, 10035	Maximum current			6		mA
3 mm	30020, 30035, 30050	Maximum current			15		mA
6 mm	60035	Maximum current			20		mA

2411220127_onsemi-MICROFC-10020-SMT-TR1_C905849.pdf

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