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quality Low Capacitance Photodiode with 5 mm Circular Active Area and Fast Rise Time Opto Diode Corp ODD-5WB factory
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quality Low Capacitance Photodiode with 5 mm Circular Active Area and Fast Rise Time Opto Diode Corp ODD-5WB factory
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Specifications
Voltage - DC Reverse(Vr):
60V
Spectral Range:
400nm~1100nm
Dark Current:
1nA
Operating Temperature:
-55℃~+100℃
Mfr. Part #:
ODD-5WB
Key Attributes
Model Number: ODD-5WB
Product Description

Product Overview

This photodiode, model ODD-5WB, features a 5 mm circular active area housed within a TO-5 hermetic package. It is designed for applications requiring low capacitance and offers a typical responsivity of 0.28 A/W at 450 nm. The device exhibits a low dark current of 1 nA at a reverse voltage of 10 V and a fast rise time of 10 nsec. Its spectral response spans from deep UV to Mid-IR, making it suitable for a range of optical sensing tasks.

Product Attributes

  • Brand: ITW Company
  • Package Type: TO-5 Hermetic Package
  • Active Area Shape: Circular

Technical Specifications

Parameter Test Conditions Min Typ Max Units
Active Area 2.52 mm Dia. (5 mm) mm
Responsivity @ 450 nm 0.2 0.28 A/W
Dark Current (Idr) VR = 10 V 1 3 nA
Reverse Breakdown Voltage (VR) IR = 10 uA 25 60 Volts
Capacitance (C) VR = 10 V 11 pF
Rise Time VR = 10 V 10 nsec
Series Resistance Vf = 1 V 35 100 Ohms
Storage and Operating Temperature Range -55 100 C
Maximum Junction Temperature 100 C
Lead Soldering Temperature 1/16" from case for 10 seconds 260 C

2411192356_Opto-Diode-Corp-ODD-5WB_C6622067.pdf

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