ON Semiconductor J-Series SiPM Sensors
ON Semiconductor's J-Series Silicon Photomultipliers (SiPM) are high-performance, low-light sensors designed for applications requiring high photon detection efficiency (PDE) and excellent timing resolution. Utilizing a P-on-N silicon foundry process and a Through Silicon Via (TSV) package, these sensors offer minimal deadspace and compatibility with industry-standard reflow soldering. Key advantages include low operating voltage, excellent temperature stability, robustness, compactness, output uniformity, and cost-effectiveness. The J-Series sensors are available in 3 mm, 4 mm, and 6 mm sizes and are suitable for tiling in various configurations.
Product Attributes
- Brand: ON Semiconductor
- Technology: Silicon Photomultiplier (SiPM)
- Package Type: TSV (Through Silicon Via)
- Material: P-on-N silicon
- Soldering Compatibility: Lead-free, reflow soldering
Technical Specifications
| Model | Active Area | No. of Microcells | Microcell Fill Factor | PDE (%) (at +6 V OV) | Dark Count Rate (kHz/mm2) | Dark Current - Typical (A) | Rise Time - anode-cathode output (ps) | Capacitance (pF) (anode output) | Capacitance (pF) (fast output) | Crosstalk (%) | Afterpulsing (%) | Package Dimensions (mm) | Recommended Operating Temperature Range |
| 30020 | 3.07 x 3.07 mm2 | 14,410 | 62% | 30 (+2.5 V OV) | 50 | 0.1 | 130 | 1040 | 50 | 2.5 | 0.75 | 3.16 x 3.16 mm2 | -40C to +85C |
| 30035 | 3.07 x 3.07 mm2 | 5,676 | 75% | 50 (+6 V OV) | 150 | 1.9 | 110 | 1800 | 70 | 25 | 5.0 | 3.16 x 3.16 mm2 | -40C to +85C |
| 40035 | 3.93 x 3.93 mm2 | 9,260 | 75% | 50 (+6 V OV) | 150 | 3.0 | 110 | 1800 | 70 | 25 | 5.0 | 4.00 x 4.00 mm2 | -40C to +85C |
| 60035 | 6.07 x 6.07 mm2 | 22,292 | 75% | 50 (+6 V OV) | 150 | 7.5 | 250 | 4140 | 160 | 25 | 5.0 | 6.13 x 6.13 mm2 | -40C to +85C |
| Parameter | Typical Value | Unit | Notes |
| Breakdown Voltage (Vbr) | 24.7 | V | Measured at 21C |
| Operating Voltage (Vop) | 25.2 - 30.7 | V | Vbr + OV |
| Spectral Range | 200 - 900 | nm | PDE > 2.0% at Vbr + 6.0 V |
| Peak PDE Wavelength ( p) | 420 | nm | |
| Temperature dependence of Vbr | 21.5 | mV/C |
2409301103_onsemi-MICROFJ-30020-TSV-TR1_C905869.pdf
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