Name: Compact tileable silicon photomultiplier onsemi MICROFC-30035-SMT-TR1 with low dark count rate and high PDE
Brand: Changsha Purple Horn E-Commerce Co., Ltd.
SKU: MICROFC-30035-SMT-TR1
Availability: InStock

quality Compact tileable silicon photomultiplier onsemi MICROFC-30035-SMT-TR1 with low dark count rate and high PDE factory

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Specifications

Voltage - DC Reverse(Vr):

24.7V

Spectral Range:

300nm~950nm

Dark Current:

154nA

Operating Temperature:

-40℃~+85℃

Mfr. Part #:

MICROFC-30035-SMT-TR1

Package:

SMD-4P

Key Attributes

Model Number: MICROFC-30035-SMT-TR1

Product Description

The C-Series low-light sensors from ON Semiconductor are Silicon Photomultipliers (SiPM) designed for low-light detection. They offer an industry-leading low dark-count rate combined with high Photon Detection Efficiency (PDE). These sensors are suitable for ultrafast timing applications, featuring a fast output with a rise time of 300 ps and a pulse width of 600 ps. The C-Series sensors are available in 1 mm, 3 mm, and 6 mm sizes and are packaged in a 4-side tileable surface mount (SMT) package compatible with lead-free reflow soldering processes. They provide high gain, single-photon sensitivity, and cover the UV-to-visible light spectrum. Compared to conventional PMTs, C-Series SiPMs offer practical advantages of solid-state technology, including low operating voltage, excellent temperature stability, robustness, compactness, output uniformity, and low cost. Recommended for usage advice, refer to the Biasing and Readout Application Note.

Product Attributes

Brand: ON Semiconductor
Origin: Semiconductor Components Industries, LLC
Material: Not specified
Color: Not specified
Certifications: Not specified

Technical Specifications

Parameter	Sensor Size	Microcell Size	Overvoltage	Min.	Typ.	Max.	Units
Breakdown Voltage (Vbr)	1 mm	10 , 20 , 35		24.2	24.7		V
Breakdown Voltage (Vbr)	3 mm	20 , 35 , 50					V
Breakdown Voltage (Vbr)	6 mm	35					V
Recommended overvoltage Range (Voltage above Vbr)	1 mm	10 , 20 , 35		1.0		5.0	V
Recommended overvoltage Range (Voltage above Vbr)	3 mm	20 , 35 , 50					V
Recommended overvoltage Range (Voltage above Vbr)	6 mm	35					V
Spectral Range	1 mm	10 , 20 , 35		300		950	nm
Spectral Range	3 mm	20 , 35 , 50					nm
Spectral Range	6 mm	35					nm
Peak Wavelength ( p)	1 mm	10 , 20 , 35			420		nm
Peak Wavelength ( p)	3 mm	20 , 35 , 50					nm
Peak Wavelength ( p)	6 mm	35					nm
PDE at p	1 mm	10	Vbr + 2.5 V		14		%
PDE at p	1 mm	20	Vbr + 2.5 V		24		%
PDE at p	1 mm	35	Vbr + 2.5 V		31		%
PDE at p	1 mm	10	Vbr + 5.0 V		18		%
PDE at p	1 mm	20	Vbr + 5.0 V		31		%
PDE at p	1 mm	35	Vbr + 5.0 V		41		%
PDE at p	3 mm	20	Vbr + 2.5 V		24		%
PDE at p	3 mm	35	Vbr + 2.5 V		31		%
PDE at p	3 mm	50	Vbr + 2.5 V		35		%
PDE at p	3 mm	20	Vbr + 5.0 V		31		%
PDE at p	3 mm	35	Vbr + 5.0 V		41		%
PDE at p	3 mm	50	Vbr + 5.0 V		47		%
PDE at p	6 mm	35	Vbr + 2.5 V		31		%
PDE at p	6 mm	35	Vbr + 5.0 V		41		%
Gain (anode to cathode readout)	1 mm	10	Vbr + 2.5 V		2 10⁵
Gain (anode to cathode readout)	1 mm	20	Vbr + 2.5 V		1 10⁶
Gain (anode to cathode readout)	1 mm	35	Vbr + 2.5 V		3 10⁶
Gain (anode to cathode readout)	3 mm	20	Vbr + 2.5 V		1 10⁶
Gain (anode to cathode readout)	3 mm	35	Vbr + 2.5 V		3 10⁶
Gain (anode to cathode readout)	3 mm	50	Vbr + 2.5 V		6 10⁶
Gain (anode to cathode readout)	6 mm	35	Vbr + 2.5 V		3 10⁶
Dark Current	1 mm	10	Vbr + 2.5 V	1		3	nA
Dark Current	1 mm	20	Vbr + 2.5 V	5		16	nA
Dark Current	1 mm	35	Vbr + 2.5 V	15		49	nA
Dark Current	3 mm	20	Vbr + 2.5 V	50		142	nA
Dark Current	3 mm	35	Vbr + 2.5 V	154		443	nA
Dark Current	3 mm	50	Vbr + 2.5 V	319		914	nA
Dark Current	6 mm	35	Vbr + 2.5 V	618		1750	nA
Dark Count Rate	1 mm	10	Vbr + 2.5 V	30		96	kHz
Dark Count Rate	1 mm	20	Vbr + 2.5 V	30		96	kHz
Dark Count Rate	1 mm	35	Vbr + 2.5 V	30		96	kHz
Dark Count Rate	3 mm	20	Vbr + 2.5 V	300		860	kHz
Dark Count Rate	3 mm	35	Vbr + 2.5 V	300		860	kHz
Dark Count Rate	3 mm	50	Vbr + 2.5 V	300		860	kHz
Dark Count Rate	6 mm	35	Vbr + 2.5 V	1200		3400	kHz
Rise Time Fast Output	1 mm	10 , 20 , 35			0.3		ns
Rise Time Fast Output	3 mm	20 , 35 , 50			0.6		ns
Rise Time Fast Output	6 mm	35			1.0		ns
Signal Pulse Width Fast Output (FWHM)	1 mm	10 , 20 , 35			0.6		ns
Signal Pulse Width Fast Output (FWHM)	3 mm	20 , 35 , 50			1.5		ns
Signal Pulse Width Fast Output (FWHM)	6 mm	35			3.2		ns
Microcell recharge time constant	1 mm	10			5		ns
Microcell recharge time constant	1 mm	20			23		ns
Microcell recharge time constant	1 mm	35			82		ns
Microcell recharge time constant	3 mm	20			23		ns
Microcell recharge time constant	3 mm	35			82		ns
Microcell recharge time constant	3 mm	50			159		ns
Microcell recharge time constant	6 mm	35			95		ns
Capacitance (anodecathode)	1 mm	10	Vbr + 2.5 V		50		pF
Capacitance (anodecathode)	1 mm	20	Vbr + 2.5 V		90		pF
Capacitance (anodecathode)	1 mm	35	Vbr + 2.5 V		100		pF
Capacitance (anodecathode)	3 mm	20	Vbr + 2.5 V		770		pF
Capacitance (anodecathode)	3 mm	35	Vbr + 2.5 V		850		pF
Capacitance (anodecathode)	3 mm	50	Vbr + 2.5 V		920		pF
Capacitance (anodecathode)	6 mm	35	Vbr + 2.5 V		3400		pF
Capacitance (fast terminal to cathode)	1 mm	10	Vbr + 2.5 V		1		pF
Capacitance (fast terminal to cathode)	1 mm	20	Vbr + 2.5 V		1		pF
Capacitance (fast terminal to cathode)	1 mm	35	Vbr + 2.5 V		1		pF
Capacitance (fast terminal to cathode)	3 mm	20	Vbr + 2.5 V		20		pF
Capacitance (fast terminal to cathode)	3 mm	35	Vbr + 2.5 V		12		pF
Capacitance (fast terminal to cathode)	3 mm	50	Vbr + 2.5 V		7		pF
Capacitance (fast terminal to cathode)	6 mm	35	Vbr + 2.5 V		48		pF
Temperature dependence of Vbr	1 mm	10 , 20 , 35			21.5		mV/C
Temperature dependence of Vbr	3 mm	20 , 35 , 50					mV/C
Temperature dependence of Vbr	6 mm	35					mV/C
Temperature dependence of Gain	1 mm	10 , 20 , 35		0.8			%/C
Temperature dependence of Gain	3 mm	20 , 35 , 50					%/C
Temperature dependence of Gain	6 mm	35					%/C
Crosstalk	1 mm	10	Vbr + 2.5 V		0.6		%
Crosstalk	1 mm	20	Vbr + 2.5 V		3		%
Crosstalk	1 mm	35	Vbr + 2.5 V		7		%
Crosstalk	3 mm	20	Vbr + 2.5 V		3		%
Crosstalk	3 mm	35	Vbr + 2.5 V		7		%
Crosstalk	3 mm	50	Vbr + 2.5 V		10		%
Crosstalk	6 mm	35	Vbr + 2.5 V		7		%
Afterpulsing	1 mm	10	Vbr + 2.5 V		0.2		%
Afterpulsing	1 mm	20	Vbr + 2.5 V		0.2		%
Afterpulsing	1 mm	35	Vbr + 2.5 V		0.2		%
Afterpulsing	3 mm	20	Vbr + 2.5 V		0.2		%
Afterpulsing	3 mm	35	Vbr + 2.5 V		0.2		%
Afterpulsing	3 mm	50	Vbr + 2.5 V		0.6		%
Afterpulsing	6 mm	35	Vbr + 2.5 V		0.2		%
Active area	1 mm	10010, 10020, 10035		1 1 mm²
Active area	3 mm	30020, 30035, 30050		3 3 mm²
Active area	6 mm	60035		6 6 mm²
No. of microcells	1 mm	10010		2880
No. of microcells	1 mm	10020		1296
No. of microcells	1 mm	10035		504
No. of microcells	3 mm	30020		10998
No. of microcells	3 mm	30035		4774
No. of microcells	3 mm	30050		2668
No. of microcells	6 mm	60035		18980
Microcell fill factor	1 mm	10010		28%
Microcell fill factor	1 mm	10020		48%
Microcell fill factor	1 mm	10035		64%
Microcell fill factor	3 mm	30020		48%
Microcell fill factor	3 mm	30035		64%
Microcell fill factor	3 mm	30050		72%
Microcell fill factor	6 mm	60035		64%
Package dimensions	1 mm	10010, 10020, 10035		1.5 1.8 mm²
Package dimensions	3 mm	30020, 30035, 30050		4 4 mm²
Package dimensions	6 mm	60035		7 7 mm²
Recommended operating temperature range				40C		+85C
Maximum storage temperature						+105C
Soldering conditions				Leadfree, reflow soldering process compatible
Encapsulant type				Clear transfer molding compound
Encapsulant refractive Index					1.59 @ 420 nm
Maximum current levels	1 mm	10010, 10020, 10035				6 mA
Maximum current levels	3 mm	30020, 30035, 30050				15 mA
Maximum current levels	6 mm	60035				20 mA

2411220127_onsemi-MICROFC-30035-SMT-TR1_C905852.pdf

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