Product Description
The ON Semiconductor C-Series Silicon Photomultipliers (SiPM) are low-noise, blue-sensitive sensors designed for low-light applications. They offer an industry-leading low dark-count rate combined with high Photon Detection Efficiency (PDE). For ultrafast timing, these sensors feature a fast output with a rise time of 300 ps and a pulse width of 600 ps. Available in 1 mm, 3 mm, and 6 mm sensor sizes, they are packaged in a 4-side tileable surface mount (SMT) package compatible with lead-free reflow soldering. C-Series SiPMs provide high gain, single-photon sensitivity, and performance characteristics similar to conventional PMTs but with the advantages of solid-state technology: low operating voltage, excellent temperature stability, robustness, compactness, output uniformity, and low cost. Recommended for usage advice, refer to the Biasing and Readout Application Note.
Product Attributes
- Brand: ON Semiconductor
- Series: C-Series
- Technology: Silicon Photomultiplier (SiPM)
- Package Type: 4-side tileable surface mount (SMT)
- Soldering Compatibility: Lead-free, reflow soldering processes
- Certifications: MSL 3 for tape & reel quantities; MSL 4 for tape only qty.
Technical Specifications
| Sensor Size | Microcell Size | Breakdown Voltage (Vbr) (Typ.) | Recommended Overvoltage Range (V) | Spectral Range (nm) | Peak Wavelength ( p) (Typ.) | PDE at p (Typ.) | Gain (anode to cathode readout) (Typ.) | Dark Current (Typ.) | Dark Count Rate (Typ.) | Rise Time - Fast Output (Typ.) | Signal Pulse Width - Fast Output (FWHM) (Typ.) | Microcell Recharge Time Constant (Typ.) | Capacitance (anode-cathode) (Typ.) | Capacitance (fast terminal to cathode) (Typ.) | Temperature Dependence of Vbr (Typ.) | Temperature Dependence of Gain (Typ.) | Crosstalk (Typ.) | Afterpulsing (Typ.) | Active Area | No. of Microcells | Microcell Fill Factor | Package Dimensions | Recommended Operating Temperature | Maximum Storage Temperature | Maximum Current Levels |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 1 mm | 10 , 20 , 35 | 24.7 V | 1.0 - 5.0 V | 300 - 950 nm | 420 nm | 14% (10 m, Vbr + 2.5 V) to 41% (1 mm, 35 m, Vbr + 5.0 V) | 2x105 (10 m, Vbr + 2.5 V) to 3x106 (1 mm, 35 m, Vbr + 2.5 V) | 1 nA (10 m, Vbr + 2.5 V) to 49 nA (1 mm, 35 m, Vbr + 2.5 V) | 30 kHz (Vbr + 2.5 V) to 96 kHz (Vbr + 2.5 V) | 0.3 ns | 0.6 ns | 5 ns (10 m) to 82 ns (35 m) | 50 pF (10 m) to 100 pF (35 m) | 1 pF | 21.5 mV/C | -0.8 %/C | 0.6% (10 m, Vbr + 2.5 V) to 7% (1 mm, 35 m, Vbr + 2.5 V) | 0.2% | 1 1 mm2 | 10010: 2880, 10020: 1296, 10035: 504 | 10010: 28%, 10020: 48%, 10035: 64% | 1.5 1.8 mm2 | -40C to +85C | +105C | 6 mA |
| 3 mm | 20 , 35 , 50 | 24.7 V | 1.0 - 5.0 V | 300 - 950 nm | 420 nm | 24% (20 m, Vbr + 2.5 V) to 47% (3 mm, 50 m, Vbr + 5.0 V) | 1 106 (20 m, Vbr + 2.5 V) to 6 106 (3 mm, 50 m, Vbr + 2.5 V) | 5 nA (20 m, Vbr + 2.5 V) to 914 nA (3 mm, 50 m, Vbr + 2.5 V) | 300 kHz (Vbr + 2.5 V) to 860 kHz (Vbr + 2.5 V) | 0.6 ns | 1.5 ns | 23 ns (20 m) to 159 ns (50 m) | 770 pF (20 m) to 920 pF (50 m) | 1 pF (20 m) to 20 pF (50 m) | 21.5 mV/C | -0.8 %/C | 3% (20 m, Vbr + 2.5 V) to 10% (3 mm, 50 m, Vbr + 2.5 V) | 0.2% (20 m, Vbr + 2.5 V) to 0.6% (3 mm, 50 m, Vbr + 2.5 V) | 3 3 mm2 | 30020: 10998, 30035: 4774, 30050: 2668 | 30020: 48%, 30035: 64%, 30050: 72% | 4 4 mm2 | -40C to +85C | +105C | 15 mA |
| 6 mm | 35 | 24.7 V | 1.0 - 5.0 V | 300 - 950 nm | 420 nm | 31% (6 mm, 35 m, Vbr + 2.5 V) to 41% (6 mm, 35 m, Vbr + 5.0 V) | 3 106 (6 mm, 35 m, Vbr + 2.5 V) | 154 nA (6 mm, 35 m, Vbr + 2.5 V) to 1750 nA (6 mm, 35 m, Vbr + 2.5 V) | 1200 kHz (Vbr + 2.5 V) to 3400 kHz (Vbr + 2.5 V) | 1.0 ns | 3.2 ns | 95 ns (6 mm, 35 m) | 3400 pF (6 mm, 35 m) | 48 pF (6 mm, 35 m) | 21.5 mV/C | -0.8 %/C | 7% (6 mm, 35 m, Vbr + 2.5 V) | 0.2% | 6 6 mm2 | 60035: 18980 | 60035: 64% | 7 7 mm2 | -40C to +85C | +105C | 20 mA |
2411220127_onsemi-MICROFC-60035-SMT-TR1_C905854.pdf
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