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Specifications
Current - Collector(Ic):
-
Collector - Emitter Voltage VCEO:
30V
Current - Dark(Id):
100nA
Peak Wavelength:
940nm
Viewing Angle:
-
Operating Temperature:
-40℃~+85℃
Mfr. Part #:
QSB363ZR
Package:
SMD,2.2x2.7mm
Key Attributes
Model Number:
QSB363ZR
Product Description
Product Overview
The QSB363 is a subminiature plastic silicon infrared phototransistor designed for various applications. Encapsulated in a black, infrared-transparent T-3/4 (2 mm) surface mount package, it features a medium wide beam angle of 24. This NPN silicon phototransistor is suitable for use with matched emitters like the QEB363 or QEB373 and includes a daylight filter. Available in multiple lead form options (Gull-wing, Yoke, Z-Bend) and packaging methods (bulk, tape & reel), the QSB363 offers flexibility for automated placement and reflow soldering processes.
Product Attributes
- Brand: ON Semiconductor (formerly Fairchild Semiconductor)
- Product Family: QSB363 Series
- Package Type: T-3/4 (2 mm) Surface Mount
- Material: Silicon
- Color: Black Plastic Package
- Lead Options: Gull-wing, Yoke, Z-Bend
- Emitter Compatibility: QEB363 or QEB373
- Features: Daylight Filter, Tape & Reel Option
Technical Specifications
| Model | Operating Temperature | Package | Packing Method |
|---|---|---|---|
| QSB363 | -40 to +85C | T-3/4 | Bulk |
| QSB363GR | -40 to +85C | T-3/4 | Gull-wing, Tape and Reel |
| QSB363YR | -40 to +85C | T-3/4 | Yoke, Tape and Reel |
| QSB363ZR | -40 to +85C | T-3/4 | Z-Bend, Tape and Reel |
| Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| TOPR | Operating Temperature | -40 | +85 | C | ||
| TSTG | Storage Temperature | -40 | +85 | C | ||
| TSOL-I | Soldering Temperature (Iron) | (1,2) | 260 | C | ||
| TSOL-F | Soldering Temperature (Flow) | (1,2) | 260 | C | ||
| VCEO | Collector Emitter Voltage | 30 | V | |||
| VECO | Emitter Collector Voltage | 5 | V | |||
| PC | Power Dissipation | (3) | 75 | mW | ||
| P | Peak Sensitivity Wavelength | 940 | nm | |||
| Reception Angle | 12 | |||||
| ICEO | Collector Dark Current | VCE = 20 V, Ee = 0 mW/cm | 100 | nA | ||
| BVCEO | Collector-Emitter Breakdown Voltage | IC = 100 A, Ee = 0 mW/cm | 30 | V | ||
| BVECO | Emitter-Collector Breakdown Voltage | IE = 100 A, Ee = 0 mW/cm | 5 | V | ||
| IC(ON) | On-State Collector Current | VCE = 5 V, Ee = 1 mW/cm, = 940 nm GaAs | 1.0 | 1.5 | mA | |
| VCE(SAT) | Collector-Emitter Saturation Voltage | IC = 2 mA, Ee = 1 mW/cm, = 940 nm GaAs | 0.4 | V | ||
| tr | Rise Time | VCE = 5 V, IC = 1 mA, RL = 1000 | 15 | s | ||
| tf | Fall Time | 15 | s |
2410121952_onsemi-QSB363ZR_C464111.pdf
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