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Specifications
Current - Collector(Ic):
-
Collector - Emitter Voltage VCEO:
30V
Current - Dark(Id):
100nA
Peak Wavelength:
880nm
Viewing Angle:
±12°
Operating Temperature:
-40℃~+100℃
Mfr. Part #:
QSD123
Package:
Through Hole,D=5mm
Key Attributes
Model Number:
QSD123
Product Description
Product Overview
The QSD123 and QSD124 are NPN silicon phototransistors encapsulated in an infrared transparent, black T-1 3/4 package. These devices feature a narrow reception angle of 12, a daylight filter, and high sensitivity. They are designed for applications requiring detection of infrared light.
Product Attributes
- Brand: ON Semiconductor (formerly Fairchild Semiconductor)
- Package Type: T-1 3/4
- Package Material and Color: Black Epoxy
- Emitter Type: NPN Silicon Phototransistor
- Matched Emitter Series: QED12X/QED22X/QED23X
- Features: Narrow Reception Angle, Daylight Filter, High Sensitivity
Technical Specifications
| Model | Description | Value | Unit |
|---|---|---|---|
| QSD123, QSD124 | Collector-Emitter Voltage (VCE) | 30 | V |
| QSD123, QSD124 | Emitter-Collector Voltage (VEC) | 5 | V |
| QSD123, QSD124 | Power Dissipation (PD) | 100 | mW |
| QSD123, QSD124 | Operating Temperature (TOPR) | -40 to +100 | C |
| QSD123, QSD124 | Storage Temperature (TSTG) | -40 to +100 | C |
| QSD123, QSD124 | Soldering Temperature (Iron) | 240 | C (for 5 sec) |
| QSD123, QSD124 | Soldering Temperature (Flow) | 260 | C (for 10 sec) |
| QSD123, QSD124 | Peak Sensitivity Wavelength (PS) | 880 | nm |
| QSD123, QSD124 | Reception Angle () | 12 | |
| QSD123, QSD124 | Collector-Emitter Dark Current (ICEO) (VCE=10V, Ee=0) | 100 | nA |
| QSD123, QSD124 | Collector-Emitter Breakdown Voltage (BVCEO) (IC=1mA) | 30 | V |
| QSD123, QSD124 | Emitter-Collector Breakdown Voltage (BVECO) (IE=100A) | 5 | V |
| QSD123 | On-State Collector Current (IC(ON)) (Ee=0.5mW/cm, VCE=5V) | 4 | mA |
| QSD124 | On-State Collector Current (IC(ON)) (Ee=0.5mW/cm, VCE=5V) | 6 | mA |
| QSD123, QSD124 | Saturation Voltage (VCE(SAT)) (Ee=0.5mW/cm, IC=0.5mA) | 0.4 | V |
| QSD123, QSD124 | Rise Time (tr) (VCC=5V, RL=100, IC=0.2mA) | 7 | s |
| QSD123, QSD124 | Fall Time (tf) | 7 | s |
2410010232_onsemi-QSD123_C184518.pdf
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