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quality Durable onsemi MICRORB-10020-MLP-TR1 SiPM sensor designed for high volume production and reflow soldering factory
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quality Durable onsemi MICRORB-10020-MLP-TR1 SiPM sensor designed for high volume production and reflow soldering factory
quality Durable onsemi MICRORB-10020-MLP-TR1 SiPM sensor designed for high volume production and reflow soldering factory
quality Durable onsemi MICRORB-10020-MLP-TR1 SiPM sensor designed for high volume production and reflow soldering factory
>
Specifications
Voltage - DC Reverse(Vr):
23V
Spectral Range:
300nm~1050nm
Dark Current:
540nA
Operating Temperature:
-40℃~+85℃
Mfr. Part #:
MICRORB-10020-MLP-TR1
Package:
SMD-4P
Key Attributes
Model Number: MICRORB-10020-MLP-TR1
Product Description

RB-Series SiPM Sensors

The RB-Series SiPM sensors are the second generation of Silicon Photomultipliers (SiPM) from ON Semiconductor, offering enhanced sensitivity in the red and near-infrared (NIR) spectrum. These sensors provide high responsivity, fast signal response, and a low temperature coefficient of operating voltage at a low bias voltage. Packaged in a compact and robust MLP package suitable for reflow soldering, they are designed for high-volume production. SiPM sensors improve upon avalanche photodiodes (APD) and PIN diodes with their high gain and single-photon sensitivity, enabling the detection of low reflectivity targets at long distances, particularly in LiDAR applications. Their 'microcell' structure allows for multi-photon detection with a high dynamic range, overcoming the single-photon limitation of SPADs.

Product Attributes

  • Brand: ON Semiconductor
  • Product Line: RB-Series
  • Technology: Silicon Photomultipliers (SiPM)
  • Package Type: MLP (Molded Lead Frame)
  • Material: Clear transfer molding compound
  • Certifications: MSL 3 for tape & reel (TR), MSL 4 for tape only (TR1)

Technical Specifications

ModelMicrocell SizeBreakdown Voltage (Vbr) (Typical)Overvoltage (Vov) (Typical)Spectral RangeActive AreaPDE @ 905 nm (Typical Overvoltage)Responsivity @ 905 nm (Typical Overvoltage)Gain (Cathode-anode Output)Dark Count Rate (Typical)Dark Current (Typical)Rise Time (Standard Output)Microcell Recharge Time ConstantCrosstalk (Typical)Afterpulsing (Typical)Package Dimensions
MICRORB-1001010 m27 V10 V300 - 1050 nm1 mm 1 mm4.0 %52 kA/W0.7 1062.5 MHz0.52 A1.5 ns12 ns30 %13 %1.5 mm 1.8 mm
MICRORB-1002020 m23 V15 V300 - 1050 nm1 mm 1 mm5.6 %61 kA/W0.9 1062.7 MHz0.54 A1.0 ns21 ns22 %6 %1.5 mm 1.8 mm
MICRORB-1003535 m25 V10 V300 - 1050 nm1 mm 1 mm9.1 %240 kA/W1.7 1062.6 MHz1.5 A0.9 ns73 ns43 %1 %1.5 mm 1.8 mm

2411220313_onsemi-MICRORB-10020-MLP-TR1_C603297.pdf

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