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Specifications
Sensing Distance:
5.08mm
Mfr. Part #:
OPB700TX
Key Attributes
Model Number:
OPB700TX
Product Description
High Reliability Reflective Object Sensor KW700dy, KW700dys
The KW700dy and KW700dys sensors are designed for non-contact reflective object sensing. Each unit comprises a Gallium Aluminum Arsenide (GaAlAs) LED and a silicon phototransistor mounted side-by-side on converging optical axes within a high-temperature black plastic housing. The phototransistor responds to radiation from the LED only when a reflective object passes within its field of view. These sensors are processed to ATK's military screening program patterned after MIL-STD-19500, offering high reliability for demanding applications.
Product Attributes
- Brand: ATK Electronics
- Product Series: KW700dy, KW700dys
- LED Type: GaAlAs
- Phototransistor Type: Silicon
- Housing Material: High-temperature black plastic
- Lead Wire Insulation: Polytetrafluoroethylene (PTFE)
- Lead Wire Gauge: 26 AWG
- Certifications/Standards: MIL-W-16878, MIL-STD-19500
- Origin: ATK Electronics
Applications
- Non-contact reflective object sensor
- Assembly line automation
- Machine automation
- Machine safety
- End of travel sensor
- Door sensor
Features
- Non-contact switching
- Low profile for facilitated stacking
- Hermetically sealed components
- 24" (609.60 mm) minimum length wire conforms to MIL-W-16878
- dy and dys components processed to MIL-STD-19500
Technical Specifications
| Part Number | LED Peak Wavelength | Sensor Reflection Distance (Inches [mm]) | Min. IF (mA) | Typ. IF (mA) | Max. IF (mA) | Max VO (Volts) | Max Lead Length / Spacing |
|---|---|---|---|---|---|---|---|
| KW700dy | 890 nm | 0.200" [5.08 mm] | 40 | 50 | 50 | 24" 26 AWG Wire | 26 AWG Wire |
| KW700dys | Reflective Surface Color/Pin | 3 / 2 / 4 / 1 | 40 | 50 | 50 | 24" 26 AWG Wire | 26 AWG Wire |
| Parameter | Symbol | Condition | Min | Typ | Max | Units |
|---|---|---|---|---|---|---|
| Input Diode Forward Voltage | VF | IF = 50 mA | 1.1 | 1.6 | 1.8 | V |
| VF | IF = 50 mA, T = -55C | 0.9 | 1.4 | 1.7 | V | |
| VF | IF = 50 mA, T = 100C | 1.3 | 1.8 | 2.0 | V | |
| IR | VR = 2 V | 0.1 | 100 | A | ||
| Output Phototransistor Breakdown Voltage | V(BR) CEO | IC = 1 mA, IF = 0 | 50 | 110 | V | |
| V(BR) ECO | IE = 100 A, IF = 0 | 7 | 10 | V | ||
| IO(OFF) | VCE = 10 V, IF = 0 | 10 | 100 | nA | ||
| Output Phototransistor Dark Current | IO(OFF) | VCE = 10 V, IF = 0, T = 100C | 10 | 100 | nA | |
| Input Diode Forward Current | IF | 50 | mA | |||
| VR | 2 | V | ||||
| Power Dissipation (1) | 100 | mW | ||||
| Output Phototransistor Collector-Emitter Voltage | VCE | 50 | V | |||
| VEC | 7 | V | ||||
| Power Dissipation (1) | 100 | mW | ||||
| Output Phototransistor ON-State Collector Current | IC(ON) | d = 0.20" [5.08 mm] (2)(3)(6) | 50 | 200 | mA | |
| IC(ON) | VCE = 5 V, IF = 40 mA, T = -55C | 25 | mA | |||
| IC(ON) | VCE = 5 V, IF = 40 mA, T = 100C | 25 | mA | |||
| Crosstalk (No reflective surface) (3) | IX | VCE = 5 V, IF = 40 mA | 2 | A | ||
| Collector-Emitter Saturation Voltage | VCE(SAT) | IC = 10 mA, IF = 40 mA | 0.4 | V | ||
| Output Rise Time | VCE = 5 V, IF = 20 mA, RL = 1,000 | 12 | 20 | s | ||
| Output Fall Time | VCE = 5 V, IF = 20 mA, RL = 1,000 | 12 | 20 | s |
Notes:
- (1) Operate linearly 1.00 mA/C above 25C.
- (2) Measured using a Eastman Kodak neutral white test card with 90% diffuse reflectance as a reflective surface.
- (3) Crosstalk (IX) is the collector current measured with the indicated current in the input diode and no reflective surface.
- (4) The distance from the assembly head to the reflective surface is "d".
- (5) Methanol or isopropyl alcohol is recommended as a cleaning agent.
- (6) Measurement is taken during the last 500 s of a single 1.0 ms test phase. Heating due to increment pulse rate or pulse width can cause a change in measurement results.
2504101957_OPTEK-OPB700TX_C17342225.pdf
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