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quality silicon photomultiplier sensor onsemi MICROFC-10035-SMT-TR1 optimized for blue light sensitivity factory
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quality silicon photomultiplier sensor onsemi MICROFC-10035-SMT-TR1 optimized for blue light sensitivity factory
quality silicon photomultiplier sensor onsemi MICROFC-10035-SMT-TR1 optimized for blue light sensitivity factory
quality silicon photomultiplier sensor onsemi MICROFC-10035-SMT-TR1 optimized for blue light sensitivity factory
>
Specifications
Voltage - DC Reverse(Vr):
24.7V
Spectral Range:
300nm~950nm
Dark Current:
15nA
Operating Temperature:
-40℃~+85℃
Mfr. Part #:
MICROFC-10035-SMT-TR1
Package:
SMD-4P
Key Attributes
Model Number: MICROFC-10035-SMT-TR1
Product Description

C-Series SiPM Sensors

The ON Semiconductor C-Series Silicon Photomultipliers (SiPM) are low-noise, blue-sensitive sensors designed for low-light applications. They offer an industry-leading low dark-count rate combined with high Photon Detection Efficiency (PDE). These sensors are ideal for ultrafast timing applications, featuring a fast output with rise times as low as 300 ps and pulse widths of 600 ps. Available in 1 mm, 3 mm, and 6 mm sensor sizes, they are packaged in a 4-side tileable surface mount (SMT) package compatible with lead-free reflow soldering. C-Series SiPMs provide high gain, single-photon sensitivity, and performance characteristics similar to conventional PMTs, with the advantages of solid-state technology such as low operating voltage, excellent temperature stability, robustness, compactness, output uniformity, and low cost.

Product Attributes

  • Brand: ON Semiconductor
  • Product Line: C-Series
  • Technology: Silicon Photomultiplier (SiPM)
  • Package Type: 4-side tileable surface mount (SMT)
  • Soldering Compatibility: Lead-free, reflow soldering processes

Technical Specifications

Sensor Size Microcell Size Breakdown Voltage (Vbr) (Typ.) Recommended Overvoltage Range (V) Spectral Range (nm) Peak Wavelength ( p) PDE at p (Typ.) Gain (Typ.) Dark Current (Typ.) Dark Count Rate (Typ.) Rise Time - Fast Output (Typ.) Signal Pulse Width - Fast Output (FWHM) (Typ.) Microcell Recharge Time Constant (Typ.) Capacitance (anode-cathode) (Typ.) Capacitance (fast terminal to cathode) (Typ.) Temperature Dependence of Vbr Temperature Dependence of Gain Crosstalk (Typ.) Afterpulsing (Typ.) Active Area No. of Microcells Microcell Fill Factor Package Dimensions Recommended Operating Temperature Range Maximum Storage Temperature Maximum Current Levels
1 mm 10, 20, 35 m 24.7 V 1.0 - 5.0 V 300 - 950 nm 420 nm 14-31% (at Vbr + 2.5V), 18-41% (at Vbr + 5.0V) 2x105 - 3x106 1 - 49 nA 30 - 96 kHz 0.3 ns 0.6 ns 5 - 82 ns 50 - 100 pF 1 pF 21.5 mV/C -0.8 %/C 0.6 - 7% 0.2% 1x1 mm2 2880 (10), 1296 (20), 504 (35) 28% (10), 48% (20), 64% (35) 1.5 x 1.8 mm2 -40C to +85C +105C 6 mA
3 mm 20, 35, 50 m 24.7 V 1.0 - 5.0 V 300 - 950 nm 420 nm 24-35% (at Vbr + 2.5V), 31-47% (at Vbr + 5.0V) 1x106 - 6x106 5 - 914 nA 300 - 860 kHz 0.6 ns 1.5 ns 23 - 159 ns 770 - 920 pF 1 - 20 pF 21.5 mV/C -0.8 %/C 3 - 10% 0.2 - 0.6% 3x3 mm2 10998 (20), 4774 (35), 2668 (50) 48% (20), 64% (35), 72% (50) 4 x 4 mm2 -40C to +85C +105C 15 mA
6 mm 35 m 24.7 V 1.0 - 5.0 V 300 - 950 nm 420 nm 31% (at Vbr + 2.5V), 41% (at Vbr + 5.0V) 3x106 618 - 1750 nA 1200 - 3400 kHz 1.0 ns 3.2 ns 95 ns 3400 pF 48 pF 21.5 mV/C -0.8 %/C 7% 0.2% 6x6 mm2 18980 (35) 64% (35) 7 x 7 mm2 -40C to +85C +105C 20 mA

2411220127_onsemi-MICROFC-10035-SMT-TR1_C905850.pdf

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