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quality Gallium arsenide infrared reflective sensor OPTEK OPB710F with filtered diode and silicon phototransistor output factory
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quality Gallium arsenide infrared reflective sensor OPTEK OPB710F with filtered diode and silicon phototransistor output factory
quality Gallium arsenide infrared reflective sensor OPTEK OPB710F with filtered diode and silicon phototransistor output factory
quality Gallium arsenide infrared reflective sensor OPTEK OPB710F with filtered diode and silicon phototransistor output factory
>
Specifications
Sensing Distance:
6.35mm
Mfr. Part #:
OPB710F
Package:
TO-72
Key Attributes
Model Number: OPB710F
Product Description

Reflective Object Sensor KW710, KW710&, KW730, KW730&

The KW710 series reflective object sensors are designed for non-contact object detection. These sensors utilize a gallium arsenide infrared emitting diode paired with either a silicon phototransistor (KW710/KW710&) or a silicon photodarlington (KW730/KW730&). They are housed in a standard TO-72 header with a black plastic sleeve filled with encapsulating epoxy. The "F" versions (KW710F/KW730F) incorporate a filtering material to reduce ambient light interference. An internal barrier prevents direct diode emission from reaching the sensor. Custom electrical, wire, cabling, and connector options are available.

Applications:

  • Non-contact reflective object sensor
  • Assembly line automation
  • Machine automation
  • Machine safety
  • End of travel sensor
  • Door sensor

Features:

  • Choice of phototransistor or photodarlington output
  • Unfocused for sensing diffuse surfaces
  • Mounted on standard TO-72 header
  • Available in clear encapsulating epoxy (KW710, KW730)
  • Filtered to reduce the effect of visible or fluorescent light (KW710F, KW730F)

Product Attributes:

  • Brand: TT Electronics / OPTEK Technology
  • Origin: USA
  • Material: Gallium Arsenide Infrared Emitting Diode, Silicon Phototransistor/Photodarlington, Epoxy
  • Color: Black plastic sleeve, clear epoxy
  • Package: TO-72 Header

Technical Specifications:

Part Number Peak Wavelength Sensor Type Reflection Distance Emitter Forward Current (mA) Emitter Peak Forward Current (mA) Emitter Reverse Voltage (V) Emitter Power Dissipation (mW) Collector-Emitter Voltage (V) Emitter-Collector Voltage (V) Collector Current (mA) Phototransistor Breakdown Voltage (V) Photodarlington Breakdown Voltage (V) Collector Dark Current (nA) Crosstalk (nA) On-State Collector Current (mA)
KW710 935 nm Transistor 0.250" (6.35mm) 50 3 3 75 30 5 25 30 - 100-250 100-500 150
KW710F 935 nm Transistor 0.250" (6.35mm) 50 3 3 75 30 5 25 30 - 100-250 100-500 150
KW730 - Darlington - 50 3 3 75 15 5 - - 15 100-250 100-500 -
KW730F - Darlington - 50 3 3 75 15 5 - - 15 100-250 100-500 -

Absolute Maximum Ratings (Ta = 25C unless otherwise noted):

Parameter Storage Temperature Range Operating Temperature Range Lead Solder Temperature Input Diode Forward Current Input Diode Peak Forward Current Input Diode Reverse Voltage Input Diode Power Dissipation Collector-Emitter Voltage Emitter-Collector Voltage Collector Current Power Dissipation
Value -20C to +85C 0C to +70C 260C (for 5 sec) 50 mA 3 A (1 s pulse) 3 V 75 mW 30 V (KW710/KW710&), 15 V (KW730/KW730&) 5 V 25 mA 150 mW

Electrical Characteristics (Ta = 25C unless otherwise noted):

Parameter Symbol Condition Min Typ Max Unit
Input Diode VF IF = 50 mA - 1.5 - V
IR VR = 3 V - - 100 A
Output Phototransistor V(BR)CEO IC = 1 mA 30 - - V
V(BR)ECO IE = 100 A 5 - - V
IC(OFF) VCE = 5 V, IF = 0, Ambient Light Excluded - 100 (KW710/KW710&), 250 (KW730/KW730&) - nA
Crosstalk IX IF = 50 mA, VCE = 5 V (No Reflecting Surface) - 100 (KW710/KW710&), 500 (KW730/KW730&) - nA
On-State Collector Current ION IF = 50 mA, VCE = 5 V, d = 0.250" (6.35 mm) 150 - - A

Combined Notes:

  • (1) RoHS flux is recommended. Duration can be extended to 10 seconds maximum when flow soldering.
  • (2) Derate linearly 1.67 mW/C above 25C.
  • (3) Derate linearly 3.33 mW/C above 25C.
  • (4) Measured using Eastman Kodak neutral white test card having 90% diffuse reflectance located 0.250 inches (6.35 mm) from the face of the KW710/KW730. Reference: Eastman Kodak, Catalog #1527795.
  • (5) Crosstalk (IX) is the collector current measured with the indicated current on the input diode and with no reflecting surface. Ambient light is excluded with a black box.

2504101957_OPTEK-OPB710F_C17498848.pdf

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