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quality Black epoxy sidelooker package infrared phototransistor onsemi QSE113 designed for matched emitter QEE113 factory
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quality Black epoxy sidelooker package infrared phototransistor onsemi QSE113 designed for matched emitter QEE113 factory
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Specifications
Current - Collector(Ic):
-
Collector - Emitter Voltage VCEO:
30V
Current - Dark(Id):
100nA
Peak Wavelength:
880nm
Viewing Angle:
±25°
Operating Temperature:
-40℃~+100℃
Mfr. Part #:
QSE113
Package:
Through Hole,L=4.4mm
Key Attributes
Model Number: QSE113
Product Description

Product Overview

The QSE113/QSE114 is a plastic silicon infrared phototransistor designed for a medium wide reception angle of 50. Encapsulated in a black, infrared-transparent sidelooker package, this NPN silicon phototransistor offers high sensitivity and features a daylight filter. It is designed to be matched with the QEE113 emitter and is suitable for applications requiring infrared detection.

Product Attributes

  • Brand: ON Semiconductor (formerly Fairchild Semiconductor)
  • Package Type: Sidelooker
  • Package Material and Color: Black Epoxy
  • Emitter Match: QEE113
  • Features: Daylight Filter, Blue dot marking on the top side

Technical Specifications

Model Parameter Conditions Min. Typ. Max. Unit
QSE113 / QSE114 Operating Temperature -40 100 C
Storage Temperature -40 100 C
Soldering Temperature (Iron) (4, 5, 6) 240 for 5 sec C
Soldering Temperature (Flow) (4, 5) 260 for 10 sec C
Collector Emitter Voltage 30 V
Emitter Collector Voltage 5 V
Power Dissipation (3) 100 mW
Peak Sensitivity 880 nm
Reception Angle 25
Collector Emitter Dark Current VCE = 10 V, Ee = 0 100 nA
QSE113 On-State Collector Current Ee = 0.5 mW/cm, VCE = 5 V (7) 0.25 1.50 mA
Rise Time IC = 1 mA, VCC = 5 V, RL = 100 8 s
Fall Time 8 s
QSE114 On-State Collector Current Ee = 0.5 mW/cm, VCE = 5 V (7) 1.00 mA
Saturation Voltage Ee = 0.5 mW/cm, IC = 0.1 mA (7) 0.4 V
QSE113 / QSE114 Collector-Emitter Breakdown IC = 1 mA 30 V
QSE113 / QSE114 Emitter-Collector Breakdown IE = 100 A 5 V

2411220051_onsemi-QSE113_C898419.pdf

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