Product Overview
The QSE113/QSE114 is a plastic silicon infrared phototransistor designed for a medium wide reception angle of 50. Encapsulated in a black, infrared-transparent sidelooker package, this NPN silicon phototransistor offers high sensitivity and features a daylight filter. It is designed to be matched with the QEE113 emitter and is suitable for applications requiring infrared detection.
Product Attributes
- Brand: ON Semiconductor (formerly Fairchild Semiconductor)
- Package Type: Sidelooker
- Package Material and Color: Black Epoxy
- Emitter Match: QEE113
- Features: Daylight Filter, Blue dot marking on the top side
Technical Specifications
| Model | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| QSE113 / QSE114 | Operating Temperature | -40 | 100 | C | ||
| Storage Temperature | -40 | 100 | C | |||
| Soldering Temperature (Iron) | (4, 5, 6) | 240 | for 5 sec | C | ||
| Soldering Temperature (Flow) | (4, 5) | 260 | for 10 sec | C | ||
| Collector Emitter Voltage | 30 | V | ||||
| Emitter Collector Voltage | 5 | V | ||||
| Power Dissipation | (3) | 100 | mW | |||
| Peak Sensitivity | 880 | nm | ||||
| Reception Angle | 25 | |||||
| Collector Emitter Dark Current | VCE = 10 V, Ee = 0 | 100 | nA | |||
| QSE113 | On-State Collector Current | Ee = 0.5 mW/cm, VCE = 5 V (7) | 0.25 | 1.50 | mA | |
| Rise Time | IC = 1 mA, VCC = 5 V, RL = 100 | 8 | s | |||
| Fall Time | 8 | s | ||||
| QSE114 | On-State Collector Current | Ee = 0.5 mW/cm, VCE = 5 V (7) | 1.00 | mA | ||
| Saturation Voltage | Ee = 0.5 mW/cm, IC = 0.1 mA (7) | 0.4 | V | |||
| QSE113 / QSE114 | Collector-Emitter Breakdown | IC = 1 mA | 30 | V | ||
| QSE113 / QSE114 | Emitter-Collector Breakdown | IE = 100 A | 5 | V |
2411220051_onsemi-QSE113_C898419.pdf
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