Name: Low noise blue sensitive silicon photomultiplier onsemi MICROFC-10020-SMT-TR with fast output timing
Brand: Changsha Purple Horn E-Commerce Co., Ltd.
SKU: MICROFC-10020-SMT-TR
Availability: InStock

quality Low noise blue sensitive silicon photomultiplier onsemi MICROFC-10020-SMT-TR with fast output timing factory

<

>

Specifications

Voltage - DC Reverse(Vr):

24.7V

Spectral Range:

300nm~950nm

Dark Current:

5nA

Operating Temperature:

-40℃~+85℃

Mfr. Part #:

MICROFC-10020-SMT-TR

Package:

SMD-4P

Key Attributes

Model Number: MICROFC-10020-SMT-TR

Product Description

Product Overview

The C-Series Silicon Photomultipliers (SiPM) from onsemi are low-noise, blue-sensitive sensors designed for low-light applications. They offer industry-leading low dark-count rates and high Photon Detection Efficiency (PDE). For ultrafast timing, these sensors provide a fast output with rise times as low as 300 ps and pulse widths of 600 ps. Available in 1 mm, 3 mm, and 6 mm sensor sizes, they are packaged in a 4-side tileable surface mount (SMT) package compatible with lead-free reflow soldering. C-Series SiPMs function as high gain, single-photon sensitive sensors with performance comparable to conventional PMTs but with the advantages of solid-state technology: low operating voltage, excellent temperature stability, robustness, compactness, output uniformity, and low cost.

Product Attributes

Brand: onsemi
Origin: Semiconductor Components Industries, LLC
Material: Silicon
Certifications: Lead-free, reflow soldering process compatible

Technical Specifications

Parameter	Sensor Size	Microcell Size	Overvoltage	Min.	Typ.	Max.	Units
Breakdown Voltage (Vbr)	1 mm	10, 20, 35		24.2	24.7		V
Breakdown Voltage (Vbr)	3 mm	20, 35, 50					V
Breakdown Voltage (Vbr)	6 mm	35					V
Recommended overvoltage Range	1 mm	10, 20, 35	(Voltage above Vbr)	1.0	5.0		V
Recommended overvoltage Range	3 mm	20, 35, 50	(Voltage above Vbr)				V
Recommended overvoltage Range	6 mm	35	(Voltage above Vbr)				V
Spectral Range	1 mm	10, 20, 35		300		950	nm
Spectral Range	3 mm	20, 35, 50					nm
Spectral Range	6 mm	35					nm
Peak Wavelength ( p)	1 mm	10, 20, 35			420		nm
Peak Wavelength ( p)	3 mm	20, 35, 50					nm
Peak Wavelength ( p)	6 mm	35					nm
PDE at p	1 mm	10	Vbr + 2.5 V		14		%
PDE at p	1 mm	20	Vbr + 2.5 V		24		%
PDE at p	1 mm	35	Vbr + 2.5 V		31		%
PDE at p	1 mm	10	Vbr + 5.0 V		18		%
PDE at p	1 mm	20	Vbr + 5.0 V		31		%
PDE at p	1 mm	35	Vbr + 5.0 V		41		%
PDE at p	3 mm	20	Vbr + 2.5 V		24		%
PDE at p	3 mm	35	Vbr + 2.5 V		31		%
PDE at p	3 mm	50	Vbr + 2.5 V		35		%
PDE at p	3 mm	20	Vbr + 5.0 V		31		%
PDE at p	3 mm	35	Vbr + 5.0 V		41		%
PDE at p	3 mm	50	Vbr + 5.0 V		47		%
PDE at p	6 mm	35	Vbr + 2.5 V		31		%
PDE at p	6 mm	35	Vbr + 5.0 V		41		%
Gain (anode to cathode readout)	1 mm	10	Vbr + 2.5 V	2 10⁵
Gain (anode to cathode readout)	1 mm	20	Vbr + 2.5 V		1 10⁶
Gain (anode to cathode readout)	1 mm	35	Vbr + 2.5 V		3 10⁶
Gain (anode to cathode readout)	3 mm	20	Vbr + 2.5 V	1 10⁶
Gain (anode to cathode readout)	3 mm	35	Vbr + 2.5 V		3 10⁶
Gain (anode to cathode readout)	3 mm	50	Vbr + 2.5 V		6 10⁶
Gain (anode to cathode readout)	6 mm	35	Vbr + 2.5 V	3 10⁶
Dark Current	1 mm	10	Vbr + 2.5 V	1	3		nA
Dark Current	1 mm	20	Vbr + 2.5 V	5	16		nA
Dark Current	1 mm	35	Vbr + 2.5 V	15	49		nA
Dark Current	3 mm	20	Vbr + 2.5 V	50	142		nA
Dark Current	3 mm	35	Vbr + 2.5 V	154	443		nA
Dark Current	3 mm	50	Vbr + 2.5 V	319	914		nA
Dark Current	6 mm	35	Vbr + 2.5 V	618	1750		nA
Dark Count Rate	1 mm	10	Vbr + 2.5 V	30	96		kHz
Dark Count Rate	1 mm	20	Vbr + 2.5 V	30	96		kHz
Dark Count Rate	1 mm	35	Vbr + 2.5 V	30	96		kHz
Dark Count Rate	3 mm	20	Vbr + 2.5 V	300	860		kHz
Dark Count Rate	3 mm	35	Vbr + 2.5 V	300	860		kHz
Dark Count Rate	3 mm	50	Vbr + 2.5 V	300	860		kHz
Dark Count Rate	6 mm	35	Vbr + 2.5 V	1200	3400		kHz
Rise Time Fast Output	1 mm	10, 20, 35			0.3		ns
Rise Time Fast Output	3 mm	20, 35, 50			0.6		ns
Rise Time Fast Output	6 mm	35			1.0		ns
Signal Pulse Width Fast Output (FWHM)	1 mm	10, 20, 35			0.6		ns
Signal Pulse Width Fast Output (FWHM)	3 mm	20, 35, 50			1.5		ns
Signal Pulse Width Fast Output (FWHM)	6 mm	35			3.2		ns
Microcell recharge time constant	1 mm	10			5		ns
Microcell recharge time constant	1 mm	20			23		ns
Microcell recharge time constant	1 mm	35			82		ns
Microcell recharge time constant	3 mm	20			23		ns
Microcell recharge time constant	3 mm	35			82		ns
Microcell recharge time constant	3 mm	50			159		ns
Microcell recharge time constant	6 mm	35			95		ns
Capacitance (anodecathode)	1 mm	10	Vbr + 2.5 V		50		pF
Capacitance (anodecathode)	1 mm	20	Vbr + 2.5 V		90		pF
Capacitance (anodecathode)	1 mm	35	Vbr + 2.5 V		100		pF
Capacitance (anodecathode)	3 mm	20	Vbr + 2.5 V		770		pF
Capacitance (anodecathode)	3 mm	35	Vbr + 2.5 V		850		pF
Capacitance (anodecathode)	3 mm	50	Vbr + 2.5 V		920		pF
Capacitance (anodecathode)	6 mm	35	Vbr + 2.5 V		3400		pF
Capacitance (fast terminal to cathode)	1 mm	10	Vbr + 2.5 V		1		pF
Capacitance (fast terminal to cathode)	1 mm	20	Vbr + 2.5 V		1		pF
Capacitance (fast terminal to cathode)	1 mm	35	Vbr + 2.5 V		1		pF
Capacitance (fast terminal to cathode)	3 mm	20	Vbr + 2.5 V		20		pF
Capacitance (fast terminal to cathode)	3 mm	35	Vbr + 2.5 V		12		pF
Capacitance (fast terminal to cathode)	3 mm	50	Vbr + 2.5 V		7		pF
Capacitance (fast terminal to cathode)	6 mm	35	Vbr + 2.5 V		48		pF
Temperature dependence of Vbr	1 mm	10, 20, 35			21.5		mV/C
Temperature dependence of Vbr	3 mm	20, 35, 50					mV/C
Temperature dependence of Vbr	6 mm	35					mV/C
Temperature dependence of Gain	1 mm	10, 20, 35		0.8			%/C
Temperature dependence of Gain	3 mm	20, 35, 50					%/C
Temperature dependence of Gain	6 mm	35					%/C
Crosstalk	1 mm	10	Vbr + 2.5 V		0.6		%
Crosstalk	1 mm	20	Vbr + 2.5 V		3		%
Crosstalk	1 mm	35	Vbr + 2.5 V		7		%
Crosstalk	3 mm	20	Vbr + 2.5 V		3		%
Crosstalk	3 mm	35	Vbr + 2.5 V		7		%
Crosstalk	3 mm	50	Vbr + 2.5 V		10		%
Crosstalk	6 mm	35	Vbr + 2.5 V		7		%
Afterpulsing	1 mm	10	Vbr + 2.5 V		0.2		%
Afterpulsing	1 mm	20	Vbr + 2.5 V		0.2		%
Afterpulsing	1 mm	35	Vbr + 2.5 V		0.2		%
Afterpulsing	3 mm	20	Vbr + 2.5 V		0.2		%
Afterpulsing	3 mm	35	Vbr + 2.5 V		0.2		%
Afterpulsing	3 mm	50	Vbr + 2.5 V		0.6		%
Afterpulsing	6 mm	35	Vbr + 2.5 V		0.2		%
Active area	1 mm	10010, 10020, 10035		1 1 mm²
Active area	3 mm	30020, 30035, 30050		3 3 mm²
Active area	6 mm	60035		6 6 mm²
No. of microcells	1 mm	10010		2880
No. of microcells	1 mm	10020		1296
No. of microcells	1 mm	10035		504
No. of microcells	3 mm	30020		10998
No. of microcells	3 mm	30035		4774
No. of microcells	3 mm	30050		2668
No. of microcells	6 mm	60035		18980
Microcell fill factor	1 mm	10010		28%
Microcell fill factor	1 mm	10020		48%
Microcell fill factor	1 mm	10035		64%
Microcell fill factor	3 mm	30020		48%
Microcell fill factor	3 mm	30035		64%
Microcell fill factor	3 mm	30050		72%
Microcell fill factor	6 mm	60035		64%
Package dimensions	1 mm	10010, 10020, 10035		1.5 1.8 mm²
Package dimensions	3 mm	30020, 30035, 30050		4 4 mm²
Package dimensions	6 mm	60035		7 7 mm²
Recommended operating temperature range				40C		+85C
Maximum storage temperature						+105C
Maximum current levels	1 mm	10010, 10020, 10035			6		mA
Maximum current levels	3 mm	30020, 30035, 30050			15		mA
Maximum current levels	6 mm	60035			20		mA

2411220452_onsemi-MICROFC-10020-SMT-TR_C891562.pdf

Request A Quote

Please Use Our Online Inquiry Contact Form Below If You Have Any Questions, Our Team Will Get Back To You As Soon As Possible

Email*

Phone / WhatsApp

Name

Company Name

Inquiry Message*

Attach Files

Choose Files

You Can Upload Up To 5 Files And Each File Sized 10M Max