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Specifications
Voltage - DC Reverse(Vr):
24.7V
Spectral Range:
300nm~950nm
Dark Current:
1nA
Operating Temperature:
-40℃~+85℃
Mfr. Part #:
MICROFC-10010-SMT-TR
Package:
SMD-4P
Key Attributes
Model Number:
MICROFC-10010-SMT-TR
Product Description
Product Overview
The onsemi C-Series Silicon Photomultipliers (SiPM) are low-noise, blue-sensitive sensors designed for low-light applications. They offer industry-leading low dark-count rates and high Photon Detection Efficiency (PDE). For ultrafast timing, these sensors provide a fast output with a rise time of 300 ps and a pulse width of 600 ps. Available in 1 mm, 3 mm, and 6 mm sensor sizes, they come in a 4-side tileable surface mount (SMT) package compatible with lead-free reflow soldering. C-Series SiPMs function as high-gain, single-photon sensitive sensors, exhibiting performance similar to conventional PMTs but with the advantages of solid-state technology, including low operating voltage, excellent temperature stability, robustness, compactness, output uniformity, and cost-effectiveness. Recommended for applications requiring precise timing and high sensitivity in UV-to-visible light detection.
Product Attributes
- Brand: onsemi
- Material: Silicon
- Package Type: Surface Mount (SMT)
- Certifications: Lead-free, reflow soldering process compatible
Technical Specifications
| Parameter | Sensor Size | Microcell Size | Overvoltage | Min. | Typ. | Max. | Units |
| Breakdown Voltage (Vbr) | 1 mm | 10, 20, 35 | 24.2 | 24.7 | V | ||
| Breakdown Voltage (Vbr) | 3 mm | 20, 35, 50 | V | ||||
| Breakdown Voltage (Vbr) | 6 mm | 35 | V | ||||
| Recommended overvoltage Range | 1 mm | 10, 20, 35 | (Voltage above Vbr) | 1.0 | 5.0 | V | |
| Recommended overvoltage Range | 3 mm | 20, 35, 50 | (Voltage above Vbr) | 1.0 | 5.0 | V | |
| Recommended overvoltage Range | 6 mm | 35 | (Voltage above Vbr) | 1.0 | 5.0 | V | |
| Spectral Range | 1 mm | 10, 20, 35 | 300 | 950 | nm | ||
| Spectral Range | 3 mm | 20, 35, 50 | 300 | 950 | nm | ||
| Spectral Range | 6 mm | 35 | 300 | 950 | nm | ||
| Peak Wavelength ( p) | 1 mm | 10, 20, 35 | 420 | nm | |||
| Peak Wavelength ( p) | 3 mm | 20, 35, 50 | 420 | nm | |||
| Peak Wavelength ( p) | 6 mm | 35 | 420 | nm | |||
| PDE at p (Vbr + 2.5 V) | 1 mm | 10 | 14 | % | |||
| PDE at p (Vbr + 2.5 V) | 1 mm | 20 | 24 | % | |||
| PDE at p (Vbr + 2.5 V) | 1 mm | 35 | 31 | % | |||
| PDE at p (Vbr + 5.0 V) | 1 mm | 10 | 18 | % | |||
| PDE at p (Vbr + 5.0 V) | 1 mm | 20 | 31 | % | |||
| PDE at p (Vbr + 5.0 V) | 1 mm | 35 | 41 | % | |||
| PDE at p (Vbr + 2.5 V) | 3 mm | 20 | 24 | % | |||
| PDE at p (Vbr + 2.5 V) | 3 mm | 35 | 31 | % | |||
| PDE at p (Vbr + 2.5 V) | 3 mm | 50 | 35 | % | |||
| PDE at p (Vbr + 5.0 V) | 3 mm | 20 | 31 | % | |||
| PDE at p (Vbr + 5.0 V) | 3 mm | 35 | 41 | % | |||
| PDE at p (Vbr + 5.0 V) | 3 mm | 50 | 47 | % | |||
| PDE at p (Vbr + 2.5 V) | 6 mm | 35 | 31 | % | |||
| PDE at p (Vbr + 5.0 V) | 6 mm | 35 | 41 | % | |||
| Gain (anode to cathode readout) (Vbr + 2.5 V) | 1 mm | 10 | 2.0E+05 | ||||
| Gain (anode to cathode readout) (Vbr + 2.5 V) | 1 mm | 20 | 1.0E+06 | ||||
| Gain (anode to cathode readout) (Vbr + 2.5 V) | 1 mm | 35 | 3.0E+06 | ||||
| Gain (anode to cathode readout) (Vbr + 2.5 V) | 3 mm | 20 | 1.0E+06 | ||||
| Gain (anode to cathode readout) (Vbr + 2.5 V) | 3 mm | 35 | 3.0E+06 | ||||
| Gain (anode to cathode readout) (Vbr + 2.5 V) | 3 mm | 50 | 6.0E+06 | ||||
| Gain (anode to cathode readout) (Vbr + 2.5 V) | 6 mm | 35 | 3.0E+06 | ||||
| Dark Current (Vbr + 2.5 V) | 1 mm | 10 | 1 | 3 | nA | ||
| Dark Current (Vbr + 2.5 V) | 1 mm | 20 | 5 | 16 | nA | ||
| Dark Current (Vbr + 2.5 V) | 1 mm | 35 | 15 | 49 | nA | ||
| Dark Current (Vbr + 2.5 V) | 3 mm | 20 | 50 | 142 | nA | ||
| Dark Current (Vbr + 2.5 V) | 3 mm | 35 | 154 | 443 | nA | ||
| Dark Current (Vbr + 2.5 V) | 3 mm | 50 | 319 | 914 | nA | ||
| Dark Current (Vbr + 2.5 V) | 6 mm | 35 | 618 | 1750 | nA | ||
| Dark Count Rate (Vbr + 2.5 V) | 1 mm | 10 | 30 | 96 | kHz | ||
| Dark Count Rate (Vbr + 2.5 V) | 1 mm | 20 | 30 | 96 | kHz | ||
| Dark Count Rate (Vbr + 2.5 V) | 1 mm | 35 | 30 | 96 | kHz | ||
| Dark Count Rate (Vbr + 2.5 V) | 3 mm | 20 | 300 | 860 | kHz | ||
| Dark Count Rate (Vbr + 2.5 V) | 3 mm | 35 | 300 | 860 | kHz | ||
| Dark Count Rate (Vbr + 2.5 V) | 3 mm | 50 | 300 | 860 | kHz | ||
| Dark Count Rate (Vbr + 2.5 V) | 6 mm | 35 | 1200 | 3400 | kHz | ||
| Rise Time Fast Output | 1 mm | 10, 20, 35 | 0.3 | ns | |||
| Rise Time Fast Output | 3 mm | 20, 35, 50 | 0.6 | ns | |||
| Rise Time Fast Output | 6 mm | 35 | 1.0 | ns | |||
| Signal Pulse Width Fast Output (FWHM) | 1 mm | 10, 20, 35 | 0.6 | ns | |||
| Signal Pulse Width Fast Output (FWHM) | 3 mm | 20, 35, 50 | 1.5 | ns | |||
| Signal Pulse Width Fast Output (FWHM) | 6 mm | 35 | 3.2 | ns | |||
| Microcell recharge time constant | 1 mm | 10 | 5 | ns | |||
| Microcell recharge time constant | 1 mm | 20 | 23 | ns | |||
| Microcell recharge time constant | 1 mm | 35 | 82 | ns | |||
| Microcell recharge time constant | 3 mm | 20 | 23 | ns | |||
| Microcell recharge time constant | 3 mm | 35 | 82 | ns | |||
| Microcell recharge time constant | 3 mm | 50 | 159 | ns | |||
| Microcell recharge time constant | 6 mm | 35 | 95 | ns | |||
| Capacitance (anodecathode) (Vbr + 2.5 V) | 1 mm | 10 | 50 | pF | |||
| Capacitance (anodecathode) (Vbr + 2.5 V) | 1 mm | 20 | 90 | pF | |||
| Capacitance (anodecathode) (Vbr + 2.5 V) | 1 mm | 35 | 100 | pF | |||
| Capacitance (anodecathode) (Vbr + 2.5 V) | 3 mm | 20 | 770 | pF | |||
| Capacitance (anodecathode) (Vbr + 2.5 V) | 3 mm | 35 | 850 | pF | |||
| Capacitance (anodecathode) (Vbr + 2.5 V) | 3 mm | 50 | 920 | pF | |||
| Capacitance (anodecathode) (Vbr + 2.5 V) | 6 mm | 35 | 3400 | pF | |||
| Capacitance (fast terminal to cathode) (Vbr + 2.5 V) | 1 mm | 10 | 1 | pF | |||
| Capacitance (fast terminal to cathode) (Vbr + 2.5 V) | 1 mm | 20 | 1 | pF | |||
| Capacitance (fast terminal to cathode) (Vbr + 2.5 V) | 1 mm | 35 | 1 | pF | |||
| Capacitance (fast terminal to cathode) (Vbr + 2.5 V) | 3 mm | 20 | 20 | pF | |||
| Capacitance (fast terminal to cathode) (Vbr + 2.5 V) | 3 mm | 35 | 12 | pF | |||
| Capacitance (fast terminal to cathode) (Vbr + 2.5 V) | 3 mm | 50 | 7 | pF | |||
| Capacitance (fast terminal to cathode) (Vbr + 2.5 V) | 6 mm | 35 | 48 | pF | |||
| Temperature dependence of Vbr | 1 mm | 10, 20, 35 | 21.5 | mV/C | |||
| Temperature dependence of Vbr | 3 mm | 20, 35, 50 | 21.5 | mV/C | |||
| Temperature dependence of Vbr | 6 mm | 35 | 21.5 | mV/C | |||
| Temperature dependence of Gain (Note 10) | 1 mm | 10, 20, 35 | -0.8 | %/C | |||
| Temperature dependence of Gain (Note 10) | 3 mm | 20, 35, 50 | -0.8 | %/C | |||
| Temperature dependence of Gain (Note 10) | 6 mm | 35 | -0.8 | %/C | |||
| Crosstalk (Vbr + 2.5 V) | 1 mm | 10 | 0.6 | % | |||
| Crosstalk (Vbr + 2.5 V) | 1 mm | 20 | 3 | % | |||
| Crosstalk (Vbr + 2.5 V) | 1 mm | 35 | 7 | % | |||
| Crosstalk (Vbr + 2.5 V) | 3 mm | 20 | 3 | % | |||
| Crosstalk (Vbr + 2.5 V) | 3 mm | 35 | 7 | % | |||
| Crosstalk (Vbr + 2.5 V) | 3 mm | 50 | 10 | % | |||
| Crosstalk (Vbr + 2.5 V) | 6 mm | 35 | 7 | % | |||
| Afterpulsing (Vbr + 2.5 V) | 1 mm | 10 | 0.2 | % | |||
| Afterpulsing (Vbr + 2.5 V) | 1 mm | 20 | 0.2 | % | |||
| Afterpulsing (Vbr + 2.5 V) | 1 mm | 35 | 0.2 | % | |||
| Afterpulsing (Vbr + 2.5 V) | 3 mm | 20 | 0.2 | % | |||
| Afterpulsing (Vbr + 2.5 V) | 3 mm | 35 | 0.2 | % | |||
| Afterpulsing (Vbr + 2.5 V) | 3 mm | 50 | 0.6 | % | |||
| Afterpulsing (Vbr + 2.5 V) | 6 mm | 35 | 0.2 | % | |||
| Active area | 1 mm | 10010, 10020, 10035 | 1 1 mm | ||||
| Active area | 3 mm | 30020, 30035, 30050 | 3 3 mm | ||||
| Active area | 6 mm | 60035 | 6 6 mm | ||||
| No. of microcells | 1 mm | 10010 | 2880 | ||||
| No. of microcells | 1 mm | 10020 | 1296 | ||||
| No. of microcells | 1 mm | 10035 | 504 | ||||
| No. of microcells | 3 mm | 30020 | 10998 | ||||
| No. of microcells | 3 mm | 30035 | 4774 | ||||
| No. of microcells | 3 mm | 30050 | 2668 | ||||
| No. of microcells | 6 mm | 60035 | 18980 | ||||
| Microcell fill factor | 1 mm | 10010 | 28% | ||||
| Microcell fill factor | 1 mm | 10020 | 48% | ||||
| Microcell fill factor | 1 mm | 10035 | 64% | ||||
| Microcell fill factor | 3 mm | 30020 | 48% | ||||
| Microcell fill factor | 3 mm | 30035 | 64% | ||||
| Microcell fill factor | 3 mm | 30050 | 72% | ||||
| Microcell fill factor | 6 mm | 60035 | 64% | ||||
| Package dimensions | 1 mm | 10010, 10020, 10035 | 1.5 1.8 mm | ||||
| Package dimensions | 3 mm | 30020, 30035, 30050 | 4 4 mm | ||||
| Package dimensions | 6 mm | 60035 | 7 7 mm | ||||
| Recommended operating temperature range | -40C | +85C | |||||
| Maximum storage temperature | +105C | ||||||
| Encapsulant type | Clear transfer molding compound | ||||||
| Encapsulant refractive Index | @ 420 nm | 1.59 | |||||
| Maximum Current | 1 mm | 10010, 10020, 10035 | 6 mA | ||||
| Maximum Current | 3 mm | 30020, 30035, 30050 | 15 mA | ||||
| Maximum Current | 6 mm | 60035 | 20 mA |
2411220452_onsemi-MICROFC-10010-SMT-TR_C891561.pdf
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