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quality compact onsemi MICROFJ-30020-TSV-TR silicon photomultiplier with fast output and uniform signal factory
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quality compact onsemi MICROFJ-30020-TSV-TR silicon photomultiplier with fast output and uniform signal factory
quality compact onsemi MICROFJ-30020-TSV-TR silicon photomultiplier with fast output and uniform signal factory
quality compact onsemi MICROFJ-30020-TSV-TR silicon photomultiplier with fast output and uniform signal factory
>
Specifications
Voltage - DC Reverse(Vr):
24.7V
Spectral Range:
200nm~900nm
Dark Current:
100nA
Operating Temperature:
-40℃~+85℃
Mfr. Part #:
MICROFJ-30020-TSV-TR
Package:
WBGA-8
Key Attributes
Model Number: MICROFJ-30020-TSV-TR
Product Description

Product Description

The onsemi J-Series Silicon Photomultipliers (SiPM) are low-light sensors designed for high photon detection efficiency (PDE) and excellent timing resolution. Utilizing a P-on-N silicon foundry process and a Through Silicon Via (TSV) package, these sensors offer minimal deadspace and compatibility with industry-standard lead-free, reflow soldering processes. Key advantages include low operating voltage, excellent temperature stability, robustness, compactness, output uniformity, and cost-effectiveness. The J-Series sensors are available in 3 mm, 4 mm, and 6 mm sizes, making them suitable for various applications requiring sensitive light detection with precise timing.

Product Attributes

  • Brand: onsemi
  • Origin: Silicon
  • Material: Silicon, Glass Cover
  • Certifications: MSL3* (Tape & reel), MSL4* (Cut tape)

Technical Specifications

ModelActive AreaNo. of MicrocellsMicrocell Fill FactorBreakdown Voltage (Vbr) (Typical)Operating Voltage (Vop)Spectral RangePeak PDE WavelengthPDE (Typical @ +6V OV)Dark Count Rate (Typical)Gain (anode-cathode)Dark Current (Typical)Rise Time (anode-cathode output)Microcell Recharge Time ConstantCapacitance (anode output)Capacitance (fast output)Fast Output Pulse Width (FWHM)Crosstalk (Typical @ +6V OV)Afterpulsing (Typical @ +6V OV)Package DimensionsRecommended Operating Temperature RangeMaximum Average Current
300203.07 3.07 mm214,41062%24.7 V25.2 - 30.7 V200 - 900 nm420 nmN/A50 kHz/mm21.0 106 - 1.9 1060.1 - 0.45 A130 - 160 ps15 ns1040 pF50 pF1.4 ns2.5 - 7.5 %0.75 - 5.0 %3.16 3.16 mm2-40C - +85C10 mA
300353.07 3.07 mm25,67675%24.7 V25.2 - 30.7 V200 - 900 nm420 nm50 %50 - 150 kHz/mm22.9 106 - 6.3 1060.23 - 1.9 A90 - 110 ps45 - 48 ns1070 pF40 - 70 pF1.5 - 1.7 ns8 - 25 %0.75 - 5.0 %3.16 3.16 mm2-40C - +85C10 mA
400353.93 3.93 mm29,26075%24.7 V25.2 - 30.7 V200 - 900 nm420 nm50 %50 - 150 kHz/mm22.9 106 - 6.3 1060.35 - 3.0 A90 - 110 ps50 ns1800 pF70 - 160 pF1.7 - 3.0 ns8 - 25 %0.75 - 5.0 %4.00 4.00 mm2-40C - +85C10 mA
600356.07 6.07 mm222,29275%24.7 V25.2 - 30.7 V200 - 900 nm420 nm50 %50 - 150 kHz/mm22.9 106 - 6.3 1060.9 - 7.5 A180 - 250 psN/A4140 pF160 pF3.0 ns8 - 25 %0.75 - 5.0 %6.13 6.13 mm2-40C - +85C15 mA

2410010231_onsemi-MICROFJ-30020-TSV-TR_C891566.pdf

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