Name: Ultrafast timing silicon photomultiplier onsemi MICROFC-30050-SMT-TR with compact SMT package design
Brand: Changsha Purple Horn E-Commerce Co., Ltd.
SKU: MICROFC-30050-SMT-TR
Availability: InStock

quality Ultrafast timing silicon photomultiplier onsemi MICROFC-30050-SMT-TR with compact SMT package design factory

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Specifications

Voltage - DC Reverse(Vr):

24.7V

Spectral Range:

300nm~950nm

Dark Current:

319nA

Operating Temperature:

-40℃~+85℃

Mfr. Part #:

MICROFC-30050-SMT-TR

Package:

SMD-4P

Key Attributes

Model Number: MICROFC-30050-SMT-TR

Product Description

Product Overview

The onsemi C-Series Silicon Photomultipliers (SiPM) are low-noise, blue-sensitive sensors designed for low-light applications. They offer industry-leading low dark-count rates and high Photon Detection Efficiency (PDE). These sensors are suitable for ultrafast timing applications with a fast output rise time of 300 ps and pulse width of 600 ps. Available in 1 mm, 3 mm, and 6 mm sensor sizes, they come in a 4-side tileable surface mount (SMT) package compatible with lead-free, reflow soldering processes. C-Series SiPMs provide high gain, single-photon sensitivity, and performance comparable to conventional PMTs, with the advantages of solid-state technology including low operating voltage, excellent temperature stability, robustness, compactness, output uniformity, and low cost.

Product Attributes

Brand: onsemi
Origin: Semiconductor Components Industries, LLC
Material: Silicon

Technical Specifications

Parameter	Sensor Size	Microcell Size	Overvoltage	Min.	Typ.	Max.	Units
Breakdown Voltage (Vbr)	1 mm	10, 20, 35		24.2	24.7		V
Breakdown Voltage (Vbr)	3 mm	20, 35, 50					V
Breakdown Voltage (Vbr)	6 mm	35					V
Recommended overvoltage Range	1 mm	10, 20, 35		1.0		5.0	V
Recommended overvoltage Range	3 mm	20, 35, 50		1.0		5.0	V
Recommended overvoltage Range	6 mm	35		1.0		5.0	V
Spectral Range	1 mm	10, 20, 35		300		950	nm
Spectral Range	3 mm	20, 35, 50		300		950	nm
Spectral Range	6 mm	35		300		950	nm
Peak Wavelength ( p)	1 mm	10, 20, 35			420		nm
Peak Wavelength ( p)	3 mm	20, 35, 50			420		nm
Peak Wavelength ( p)	6 mm	35			420		nm
PDE at p	1 mm	10	Vbr + 2.5 V		14		%
PDE at p	1 mm	20	Vbr + 2.5 V		24		%
PDE at p	1 mm	35	Vbr + 2.5 V		31		%
PDE at p	1 mm	10	Vbr + 5.0 V		18		%
PDE at p	1 mm	20	Vbr + 5.0 V		31		%
PDE at p	1 mm	35	Vbr + 5.0 V		41		%
PDE at p	3 mm	20	Vbr + 2.5 V		24		%
PDE at p	3 mm	35	Vbr + 2.5 V		31		%
PDE at p	3 mm	50	Vbr + 2.5 V		35		%
PDE at p	3 mm	20	Vbr + 5.0 V		31		%
PDE at p	3 mm	35	Vbr + 5.0 V		41		%
PDE at p	3 mm	50	Vbr + 5.0 V		47		%
PDE at p	6 mm	35	Vbr + 2.5 V		31		%
PDE at p	6 mm	35	Vbr + 5.0 V		41		%
Gain (anode to cathode readout)	1 mm	10	Vbr + 2.5 V	2.0E+05
Gain (anode to cathode readout)	1 mm	20	Vbr + 2.5 V	1.0E+06
Gain (anode to cathode readout)	1 mm	35	Vbr + 2.5 V	3.0E+06
Gain (anode to cathode readout)	3 mm	20	Vbr + 2.5 V	1.0E+06
Gain (anode to cathode readout)	3 mm	35	Vbr + 2.5 V	3.0E+06
Gain (anode to cathode readout)	3 mm	50	Vbr + 2.5 V	6.0E+06
Gain (anode to cathode readout)	6 mm	35	Vbr + 2.5 V	3.0E+06
Dark Current	1 mm	10	Vbr + 2.5 V	1		3	nA
Dark Current	1 mm	20	Vbr + 2.5 V	5		16	nA
Dark Current	1 mm	35	Vbr + 2.5 V	15		49	nA
Dark Current	3 mm	20	Vbr + 2.5 V	50		142	nA
Dark Current	3 mm	35	Vbr + 2.5 V	154		443	nA
Dark Current	3 mm	50	Vbr + 2.5 V	319		914	nA
Dark Current	6 mm	35	Vbr + 2.5 V	618		1750	nA
Dark Count Rate	1 mm	10	Vbr + 2.5 V	30		96	kHz
Dark Count Rate	1 mm	20	Vbr + 2.5 V	30		96	kHz
Dark Count Rate	1 mm	35	Vbr + 2.5 V	30		96	kHz
Dark Count Rate	3 mm	20	Vbr + 2.5 V	300		860	kHz
Dark Count Rate	3 mm	35	Vbr + 2.5 V	300		860	kHz
Dark Count Rate	3 mm	50	Vbr + 2.5 V	300		860	kHz
Dark Count Rate	6 mm	35	Vbr + 2.5 V	1200		3400	kHz
Rise Time Fast Output	1 mm	10, 20, 35				0.3	ns
Rise Time Fast Output	3 mm	20, 35, 50				0.6	ns
Rise Time Fast Output	6 mm	35				1.0	ns
Signal Pulse Width Fast Output (FWHM)	1 mm	10, 20, 35				0.6	ns
Signal Pulse Width Fast Output (FWHM)	3 mm	20, 35, 50				1.5	ns
Signal Pulse Width Fast Output (FWHM)	6 mm	35				3.2	ns
Microcell recharge time constant	1 mm	10			5		ns
Microcell recharge time constant	1 mm	20			23		ns
Microcell recharge time constant	1 mm	35			82		ns
Microcell recharge time constant	3 mm	20			23		ns
Microcell recharge time constant	3 mm	35			82		ns
Microcell recharge time constant	3 mm	50			159		ns
Microcell recharge time constant	6 mm	35			95		ns
Capacitance (anodecathode)	1 mm	10	Vbr + 2.5 V		50		pF
Capacitance (anodecathode)	1 mm	20	Vbr + 2.5 V		90		pF
Capacitance (anodecathode)	1 mm	35	Vbr + 2.5 V		100		pF
Capacitance (anodecathode)	3 mm	20	Vbr + 2.5 V		770		pF
Capacitance (anodecathode)	3 mm	35	Vbr + 2.5 V		850		pF
Capacitance (anodecathode)	3 mm	50	Vbr + 2.5 V		920		pF
Capacitance (anodecathode)	6 mm	35	Vbr + 2.5 V		3400		pF
Capacitance (fast terminal to cathode)	1 mm	10	Vbr + 2.5 V		1		pF
Capacitance (fast terminal to cathode)	1 mm	20	Vbr + 2.5 V		1		pF
Capacitance (fast terminal to cathode)	1 mm	35	Vbr + 2.5 V		1		pF
Capacitance (fast terminal to cathode)	3 mm	20	Vbr + 2.5 V		20		pF
Capacitance (fast terminal to cathode)	3 mm	35	Vbr + 2.5 V		12		pF
Capacitance (fast terminal to cathode)	3 mm	50	Vbr + 2.5 V		7		pF
Capacitance (fast terminal to cathode)	6 mm	35	Vbr + 2.5 V		48		pF
Temperature dependence of Vbr	1 mm	10, 20, 35			21.5		mV/C
Temperature dependence of Vbr	3 mm	20, 35, 50			21.5		mV/C
Temperature dependence of Vbr	6 mm	35			21.5		mV/C
Temperature dependence of Gain	1 mm	10, 20, 35		0.8			%/C
Temperature dependence of Gain	3 mm	20, 35, 50		0.8			%/C
Temperature dependence of Gain	6 mm	35		0.8			%/C
Crosstalk	1 mm	10	Vbr + 2.5 V		0.6		%
Crosstalk	1 mm	20	Vbr + 2.5 V		3		%
Crosstalk	1 mm	35	Vbr + 2.5 V		7		%
Crosstalk	3 mm	20	Vbr + 2.5 V		3		%
Crosstalk	3 mm	35	Vbr + 2.5 V		7		%
Crosstalk	3 mm	50	Vbr + 2.5 V		10		%
Crosstalk	6 mm	35	Vbr + 2.5 V		7		%
Afterpulsing	1 mm	10	Vbr + 2.5 V		0.2		%
Afterpulsing	1 mm	20	Vbr + 2.5 V		0.2		%
Afterpulsing	1 mm	35	Vbr + 2.5 V		0.2		%
Afterpulsing	3 mm	20	Vbr + 2.5 V		0.2		%
Afterpulsing	3 mm	35	Vbr + 2.5 V		0.2		%
Afterpulsing	3 mm	50	Vbr + 2.5 V		0.6		%
Afterpulsing	6 mm	35	Vbr + 2.5 V		0.2		%
Active area	1 mm	10010, 10020, 10035		1 1 mm
Active area	3 mm	30020, 30035, 30050		3 3 mm
Active area	6 mm	60035		6 6 mm
No. of microcells	1 mm	10010		2880
No. of microcells	1 mm	10020		1296
No. of microcells	1 mm	10035		504
No. of microcells	3 mm	30020		10998
No. of microcells	3 mm	30035		4774
No. of microcells	3 mm	30050		2668
No. of microcells	6 mm	60035		18980
Microcell fill factor	1 mm	10010		28%
Microcell fill factor	1 mm	10020		48%
Microcell fill factor	1 mm	10035		64%
Microcell fill factor	3 mm	30020		48%
Microcell fill factor	3 mm	30035		64%
Microcell fill factor	3 mm	30050		72%
Microcell fill factor	6 mm	60035		64%
Package dimensions	1 mm	10010, 10020, 10035		1.5 1.8 mm
Package dimensions	3 mm	30020, 30035, 30050		4 4 mm
Package dimensions	6 mm	60035		7 7 mm
Recommended operating temperature range				40C		+85C
Maximum storage temperature						+105C
Encapsulant refractive Index				1.59		@ 420 nm
Maximum Current	1 mm	10010, 10020, 10035				6 mA
Maximum Current	3 mm	30020, 30035, 30050				15 mA
Maximum Current	6 mm	60035				20 mA

2411220452_onsemi-MICROFC-30050-SMT-TR_C891565.pdf

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