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Specifications
Measurement Type:
Light Intensity
Operating Temperature:
-40℃~+85℃
Mfr. Part #:
MICROFC-10010-SMT-TR1
Package:
DFN-4(1.5x1.8)
Key Attributes
Model Number:
MICROFC-10010-SMT-TR1
Product Description
Product Description
The ON Semiconductor C-Series Silicon Photomultipliers (SiPM) are low-noise, blue-sensitive sensors designed for low-light applications. They offer an industry-leading low dark-count rate and high Photon Detection Efficiency (PDE). For ultrafast timing, these sensors feature a fast output with rise times as low as 300 ps and pulse widths of 600 ps. Available in 1 mm, 3 mm, and 6 mm sensor sizes, they are packaged in a 4-side tileable surface mount (SMT) package compatible with lead-free reflow soldering. C-Series SiPMs provide high gain, single-photon sensitivity, and exhibit performance characteristics similar to conventional PMTs but with the advantages of solid-state technology, including low operating voltage, excellent temperature stability, robustness, compactness, output uniformity, and low cost. Recommended for usage advice, refer to the Biasing and Readout Application Note.
Product Attributes
- Brand: ON Semiconductor
- Series: C-Series
- Technology: Silicon Photomultiplier (SiPM)
- Package Type: 4-side tileable surface mount (SMT)
- Soldering Compatibility: Lead-free, reflow soldering processes
Technical Specifications
| Parameter | Sensor Size | Microcell Size | Overvoltage | Min. | Typ. | Max. | Units |
| Breakdown Voltage (Vbr) | 1 mm | 10, 20, 35 m | 24.2 | 24.7 | V | ||
| Breakdown Voltage (Vbr) | 3 mm | 20, 35, 50 m | V | ||||
| Breakdown Voltage (Vbr) | 6 mm | 35 m | V | ||||
| Recommended overvoltage Range | 1 mm | 10, 20, 35 m | (Voltage above Vbr) | 1.0 | 5.0 | V | |
| Recommended overvoltage Range | 3 mm | 20, 35, 50 m | (Voltage above Vbr) | V | |||
| Recommended overvoltage Range | 6 mm | 35 m | (Voltage above Vbr) | V | |||
| Spectral Range | 1 mm | 10, 20, 35 m | 300 | 950 | nm | ||
| Spectral Range | 3 mm | 20, 35, 50 m | nm | ||||
| Spectral Range | 6 mm | 35 m | nm | ||||
| Peak Wavelength (p) | 1 mm | 10, 20, 35 m | 420 | nm | |||
| Peak Wavelength (p) | 3 mm | 20, 35, 50 m | nm | ||||
| Peak Wavelength (p) | 6 mm | 35 m | nm | ||||
| PDE at p | 1 mm | 10 m | Vbr + 2.5 V | 14% | % | ||
| PDE at p | 1 mm | 20 m | Vbr + 2.5 V | 24% | % | ||
| PDE at p | 1 mm | 35 m | Vbr + 2.5 V | 31% | % | ||
| PDE at p | 1 mm | 10 m | Vbr + 5.0 V | 18% | % | ||
| PDE at p | 1 mm | 20 m | Vbr + 5.0 V | 31% | % | ||
| PDE at p | 1 mm | 35 m | Vbr + 5.0 V | 41% | % | ||
| PDE at p | 3 mm | 20 m | Vbr + 2.5 V | 24% | % | ||
| PDE at p | 3 mm | 35 m | Vbr + 2.5 V | 31% | % | ||
| PDE at p | 3 mm | 50 m | Vbr + 2.5 V | 35% | % | ||
| PDE at p | 3 mm | 20 m | Vbr + 5.0 V | 31% | % | ||
| PDE at p | 3 mm | 35 m | Vbr + 5.0 V | 41% | % | ||
| PDE at p | 3 mm | 50 m | Vbr + 5.0 V | 47% | % | ||
| PDE at p | 6 mm | 35 m | Vbr + 2.5 V | 31% | % | ||
| PDE at p | 6 mm | 35 m | Vbr + 5.0 V | 41% | % | ||
| Gain (anode to cathode readout) | 1 mm | 10 m | Vbr + 2.5 V | 2 10 | |||
| Gain (anode to cathode readout) | 1 mm | 20 m | Vbr + 2.5 V | 1 10 | |||
| Gain (anode to cathode readout) | 1 mm | 35 m | Vbr + 2.5 V | 3 10 | |||
| Gain (anode to cathode readout) | 3 mm | 20 m | Vbr + 2.5 V | 1 10 | |||
| Gain (anode to cathode readout) | 3 mm | 35 m | Vbr + 2.5 V | 3 10 | |||
| Gain (anode to cathode readout) | 3 mm | 50 m | Vbr + 2.5 V | 6 10 | |||
| Gain (anode to cathode readout) | 6 mm | 35 m | Vbr + 2.5 V | 3 10 | |||
| Dark Current | 1 mm | 10 m | Vbr + 2.5 V | 1 | 3 | nA | |
| Dark Current | 1 mm | 20 m | Vbr + 2.5 V | 5 | 16 | nA | |
| Dark Current | 1 mm | 35 m | Vbr + 2.5 V | 15 | 49 | nA | |
| Dark Current | 3 mm | 20 m | Vbr + 2.5 V | 50 | 142 | nA | |
| Dark Current | 3 mm | 35 m | Vbr + 2.5 V | 154 | 443 | nA | |
| Dark Current | 3 mm | 50 m | Vbr + 2.5 V | 319 | 914 | nA | |
| Dark Current | 6 mm | 35 m | Vbr + 2.5 V | 618 | 1750 | nA | |
| Dark Count Rate | 1 mm | 10 m | Vbr + 2.5 V | 30 | 96 | kHz | |
| Dark Count Rate | 1 mm | 20 m | Vbr + 2.5 V | 30 | 96 | kHz | |
| Dark Count Rate | 1 mm | 35 m | Vbr + 2.5 V | 30 | 96 | kHz | |
| Dark Count Rate | 3 mm | 20 m | Vbr + 2.5 V | 300 | 860 | kHz | |
| Dark Count Rate | 3 mm | 35 m | Vbr + 2.5 V | 300 | 860 | kHz | |
| Dark Count Rate | 3 mm | 50 m | Vbr + 2.5 V | 300 | 860 | kHz | |
| Dark Count Rate | 6 mm | 35 m | Vbr + 2.5 V | 1200 | 3400 | kHz | |
| Rise Time Fast Output | 1 mm | 10, 20, 35 m | 0.3 | ns | |||
| Rise Time Fast Output | 3 mm | 20, 35, 50 m | 0.6 | ns | |||
| Rise Time Fast Output | 6 mm | 35 m | 1.0 | ns | |||
| Signal Pulse Width Fast Output (FWHM) | 1 mm | 10, 20, 35 m | 0.6 | ns | |||
| Signal Pulse Width Fast Output (FWHM) | 3 mm | 20, 35, 50 m | 1.5 | ns | |||
| Signal Pulse Width Fast Output (FWHM) | 6 mm | 35 m | 3.2 | ns | |||
| Microcell recharge time constant | 1 mm | 10 m | 5 | ns | |||
| Microcell recharge time constant | 1 mm | 20 m | 23 | ns | |||
| Microcell recharge time constant | 1 mm | 35 m | 82 | ns | |||
| Microcell recharge time constant | 3 mm | 20 m | 23 | ns | |||
| Microcell recharge time constant | 3 mm | 35 m | 82 | ns | |||
| Microcell recharge time constant | 3 mm | 50 m | 159 | ns | |||
| Microcell recharge time constant | 6 mm | 35 m | 95 | ns | |||
| Capacitance (anodecathode) | 1 mm | 10 m | Vbr + 2.5 V | 50 | pF | ||
| Capacitance (anodecathode) | 1 mm | 20 m | Vbr + 2.5 V | 90 | pF | ||
| Capacitance (anodecathode) | 1 mm | 35 m | Vbr + 2.5 V | 100 | pF | ||
| Capacitance (anodecathode) | 3 mm | 20 m | Vbr + 2.5 V | 770 | pF | ||
| Capacitance (anodecathode) | 3 mm | 35 m | Vbr + 2.5 V | 850 | pF | ||
| Capacitance (anodecathode) | 3 mm | 50 m | Vbr + 2.5 V | 920 | pF | ||
| Capacitance (anodecathode) | 6 mm | 35 m | Vbr + 2.5 V | 3400 | pF | ||
| Capacitance (fast terminal to cathode) | 1 mm | 10 m | Vbr + 2.5 V | 1 | pF | ||
| Capacitance (fast terminal to cathode) | 1 mm | 20 m | Vbr + 2.5 V | 1 | pF | ||
| Capacitance (fast terminal to cathode) | 1 mm | 35 m | Vbr + 2.5 V | 1 | pF | ||
| Capacitance (fast terminal to cathode) | 3 mm | 20 m | Vbr + 2.5 V | 20 | pF | ||
| Capacitance (fast terminal to cathode) | 3 mm | 35 m | Vbr + 2.5 V | 12 | pF | ||
| Capacitance (fast terminal to cathode) | 3 mm | 50 m | Vbr + 2.5 V | 7 | pF | ||
| Capacitance (fast terminal to cathode) | 6 mm | 35 m | Vbr + 2.5 V | 48 | pF | ||
| Temperature dependence of Vbr | 1 mm | 10, 20, 35 m | 21.5 | mV/C | |||
| Temperature dependence of Vbr | 3 mm | 20, 35, 50 m | mV/C | ||||
| Temperature dependence of Vbr | 6 mm | 35 m | mV/C | ||||
| Temperature dependence of Gain | 1 mm | 10, 20, 35 m | 0.8 | %/C | |||
| Temperature dependence of Gain | 3 mm | 20, 35, 50 m | %/C | ||||
| Temperature dependence of Gain | 6 mm | 35 m | %/C | ||||
| Crosstalk | 1 mm | 10 m | Vbr + 2.5 V | 0.6% | % | ||
| Crosstalk | 1 mm | 20 m | Vbr + 2.5 V | 3% | % | ||
| Crosstalk | 1 mm | 35 m | Vbr + 2.5 V | 7% | % | ||
| Crosstalk | 3 mm | 20 m | Vbr + 2.5 V | 3% | % | ||
| Crosstalk | 3 mm | 35 m | Vbr + 2.5 V | 7% | % | ||
| Crosstalk | 3 mm | 50 m | Vbr + 2.5 V | 10% | % | ||
| Crosstalk | 6 mm | 35 m | Vbr + 2.5 V | 7% | % | ||
| Afterpulsing | 1 mm | 10 m | Vbr + 2.5 V | 0.2% | % | ||
| Afterpulsing | 1 mm | 20 m | Vbr + 2.5 V | 0.2% | % | ||
| Afterpulsing | 1 mm | 35 m | Vbr + 2.5 V | 0.2% | % | ||
| Afterpulsing | 3 mm | 20 m | Vbr + 2.5 V | 0.2% | % | ||
| Afterpulsing | 3 mm | 35 m | Vbr + 2.5 V | 0.2% | % | ||
| Afterpulsing | 3 mm | 50 m | Vbr + 2.5 V | 0.6% | % | ||
| Afterpulsing | 6 mm | 35 m | Vbr + 2.5 V | 0.2% | % | ||
| Active area | 1 mm | 10010, 10020, 10035 | 1 1 mm | ||||
| Active area | 3 mm | 30020, 30035, 30050 | 3 3 mm | ||||
| Active area | 6 mm | 60035 | 6 6 mm | ||||
| No. of microcells | 1 mm | 10010 | 2880 | ||||
| No. of microcells | 1 mm | 10020 | 1296 | ||||
| No. of microcells | 1 mm | 10035 | 504 | ||||
| No. of microcells | 3 mm | 30020 | 10998 | ||||
| No. of microcells | 3 mm | 30035 | 4774 | ||||
| No. of microcells | 3 mm | 30050 | 2668 | ||||
| No. of microcells | 6 mm | 60035 | 18980 | ||||
| Microcell fill factor | 1 mm | 10010 | 28% | ||||
| Microcell fill factor | 1 mm | 10020 | 48% | ||||
| Microcell fill factor | 1 mm | 10035 | 64% | ||||
| Microcell fill factor | 3 mm | 30020 | 48% | ||||
| Microcell fill factor | 3 mm | 30035 | 64% | ||||
| Microcell fill factor | 3 mm | 30050 | 72% | ||||
| Microcell fill factor | 6 mm | 60035 | 64% | ||||
| Package dimensions | 1 mm | 10010, 10020, 10035 | 1.5 1.8 mm | ||||
| Package dimensions | 3 mm | 30020, 30035, 30050 | 4 4 mm | ||||
| Package dimensions | 6 mm | 60035 | 7 7 mm | ||||
| Recommended operating temperature range | 40C | +85C | |||||
| Maximum storage temperature | +105C | ||||||
| Soldering conditions | Leadfree, reflow soldering process compatible | ||||||
| Encapsulant type | Clear transfer molding compound | ||||||
| Encapsulant refractive Index | 1.59 @ 420 nm | ||||||
| Maximum current levels | 1 mm | 10010, 10020, 10035 | 6 mA | ||||
| Maximum current levels | 3 mm | 30020, 30035, 30050 | 15 mA | ||||
| Maximum current levels | 6 mm | 60035 | 20 mA |
2411220127_onsemi-MICROFC-10010-SMT-TR1_C905848.pdf
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