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Specifications
Voltage - DC Reverse(Vr):
50V
Viewing Angle:
-
Spectral Range:
700nm~1100nm
Dark Current:
10nA
Operating Temperature:
-40℃~+100℃
Mfr. Part #:
QSD2030F
Package:
Through Hole,D=5mm
Key Attributes
Model Number:
QSD2030F
Product Description
ON Semiconductor QSD2030F Plastic Silicon Photodiode
The ON Semiconductor QSD2030F is a plastic silicon photodiode featuring a PIN photodiode structure within a T-1 3/4 (5 mm lens diameter) package. It offers a wide reception angle of 40, a daylight filter, and high sensitivity with peak sensitivity at 880 nm. The photodiode is constructed with black epoxy material.
Product Attributes
- Brand: ON Semiconductor
- Part Number: QSD2030F
- Package Type: T-1 3/4 (5 mm Lens Diameter)
- Package Material and Color: Black Epoxy
- Features: PIN Photodiode, Wide Reception Angle (40), Daylight Filter, High Sensitivity
Technical Specifications
| Parameter | Test Conditions | Min. | Typ. | Max. | Unit |
| Operating Temperature | -40 | +100 | C | ||
| Storage Temperature | -40 | 100 | C | ||
| Soldering Temperature (Iron) | (1,2,3) 5 s | 240 | C | ||
| Soldering Temperature (Flow) | (1,2) 10 s | 260 | C | ||
| Reverse Breakdown Voltage | 50 | V | |||
| Power Dissipation | (4) Derate linearly 1.33 mW/C above 25C | 100 | mW | ||
| Peak Sensitivity Wavelength | 880 | nm | |||
| Wavelength Sensitivity Range | 700 | 1100 | nm | ||
| Reception Angle | 20 | ||||
| Forward Voltage | IF = 80 mA | 1.3 | V | ||
| Reverse Dark Current | VR = 10 V, Ee = 0 | 10 | nA | ||
| Reverse Light Current | Ee = 0.5 mW/cm, VR = 5 V, = 950 nm | 15 | 25 | A | |
| Open Circuit Voltage | Ee = 0.5 mW/cm, = 880 nm | 420 | mV | ||
| Temperature Coefficient of VO | +0.6 | mV/K | |||
| Short Circuit Current | Ee = 0.5 mW/cm, = 880 nm | 50 | A | ||
| Temperature Coefficient of ISC | +0.3 | %/K | |||
| Capacitance | VR = 0, f = 1 MHz, Ee = 0 | 15 | pF | ||
| Rise Time | VR = 5 V, RL = 50 , = 950 nm | 5 | ns | ||
| Fall Time | 5 | ns |
2411220051_onsemi-QSD2030F_C897964.pdf
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