Name: Ultrafast Timing Silicon Photomultiplier Sensor onsemi MICROFC-30050-SMT-TR1 for Low Light Detection
Brand: Changsha Purple Horn E-Commerce Co., Ltd.
SKU: MICROFC-30050-SMT-TR1
Availability: InStock

quality Ultrafast Timing Silicon Photomultiplier Sensor onsemi MICROFC-30050-SMT-TR1 for Low Light Detection factory

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Specifications

Voltage - DC Reverse(Vr):

24.7V

Spectral Range:

300nm~950nm

Dark Current:

319nA

Operating Temperature:

-40℃~+85℃

Mfr. Part #:

MICROFC-30050-SMT-TR1

Package:

SMD-4P

Key Attributes

Model Number: MICROFC-30050-SMT-TR1

Product Description

C-Series SiPM Sensors

The ON Semiconductor C-Series Silicon Photomultipliers (SiPM) are low-noise, blue-sensitive, single-photon sensitive sensors designed for high-gain applications. They offer performance characteristics comparable to conventional PMTs but with the practical advantages of solid-state technology, including low operating voltage, excellent temperature stability, robustness, compactness, output uniformity, and low cost. These sensors are ideal for ultrafast timing applications, featuring a fast output with a rise time of 300 ps and a pulse width of 600 ps. The C-Series is available in various sensor sizes (1 mm, 3 mm, and 6 mm) and is packaged in a 4-side tileable surface mount (SMT) package compatible with industry-standard, lead-free, reflow soldering processes. Applications include low-light detection and timing-critical measurements.

Product Attributes

Brand: ON Semiconductor
Origin: Semiconductor Components Industries, LLC
Material: Silicon
Certifications: Compatible with industry standard, lead-free, reflow soldering processes

Technical Specifications

Parameter	Sensor Size	Microcell Size	Min.	Typ.	Max.	Units	Overvoltage
Breakdown Voltage (Vbr)	1 mm	10, 20, 35 m		24.7		V
Breakdown Voltage (Vbr)	3 mm	20, 35, 50 m				V
Breakdown Voltage (Vbr)	6 mm	35 m				V
Recommended overvoltage Range	1 mm	10, 20, 35 m	1.0		5.0	V	(Voltage above Vbr)
Recommended overvoltage Range	3 mm	20, 35, 50 m	1.0		5.0	V	(Voltage above Vbr)
Recommended overvoltage Range	6 mm	35 m	1.0		5.0	V	(Voltage above Vbr)
Spectral Range	1 mm	10, 20, 35 m	300		950	nm
Spectral Range	3 mm	20, 35, 50 m	300		950	nm
Spectral Range	6 mm	35 m	300		950	nm
Peak Wavelength (p)	1 mm	10, 20, 35 m		420		nm
Peak Wavelength (p)	3 mm	20, 35, 50 m		420		nm
Peak Wavelength (p)	6 mm	35 m		420		nm
PDE at p (Vbr + 2.5 V)	1 mm	10 m		14		%
PDE at p (Vbr + 2.5 V)	1 mm	20 m		24		%
PDE at p (Vbr + 2.5 V)	1 mm	35 m		31		%
PDE at p (Vbr + 5.0 V)	1 mm	10 m		18		%
PDE at p (Vbr + 5.0 V)	1 mm	20 m		31		%
PDE at p (Vbr + 5.0 V)	1 mm	35 m		41		%
PDE at p (Vbr + 2.5 V)	3 mm	20 m		24		%
PDE at p (Vbr + 2.5 V)	3 mm	35 m		31		%
PDE at p (Vbr + 2.5 V)	3 mm	50 m		35		%
PDE at p (Vbr + 5.0 V)	3 mm	20 m		31		%
PDE at p (Vbr + 5.0 V)	3 mm	35 m		41		%
PDE at p (Vbr + 5.0 V)	3 mm	50 m		47		%
PDE at p (Vbr + 2.5 V)	6 mm	35 m		31		%
PDE at p (Vbr + 5.0 V)	6 mm	35 m		41		%
Gain (anode to cathode readout) (Vbr + 2.5 V)	1 mm	10 m	2 10⁵
Gain (anode to cathode readout) (Vbr + 2.5 V)	1 mm	20 m		1 10⁶
Gain (anode to cathode readout) (Vbr + 2.5 V)	1 mm	35 m		3 10⁶
Gain (anode to cathode readout) (Vbr + 2.5 V)	3 mm	20 m	1 10⁶
Gain (anode to cathode readout) (Vbr + 2.5 V)	3 mm	35 m		3 10⁶
Gain (anode to cathode readout) (Vbr + 2.5 V)	3 mm	50 m		6 10⁶
Gain (anode to cathode readout) (Vbr + 2.5 V)	6 mm	35 m	3 10⁶
Dark Current (Vbr + 2.5 V)	1 mm	10 m	1		3	nA
Dark Current (Vbr + 2.5 V)	1 mm	20 m	5		16	nA
Dark Current (Vbr + 2.5 V)	1 mm	35 m	15		49	nA
Dark Current (Vbr + 2.5 V)	3 mm	20 m	50		142	nA
Dark Current (Vbr + 2.5 V)	3 mm	35 m	154		443	nA
Dark Current (Vbr + 2.5 V)	3 mm	50 m	319		914	nA
Dark Current (Vbr + 2.5 V)	6 mm	35 m	618		1750	nA
Dark Count Rate (Vbr + 2.5 V)	1 mm	10, 20, 35 m	30		96	kHz
Dark Count Rate (Vbr + 2.5 V)	3 mm	20, 35, 50 m	300		860	kHz
Dark Count Rate (Vbr + 2.5 V)	6 mm	35 m	1200		3400	kHz
Rise Time Fast Output	1 mm	10, 20, 35 m		0.3		ns
Rise Time Fast Output	3 mm	20, 35, 50 m		0.6		ns
Rise Time Fast Output	6 mm	35 m		1.0		ns
Signal Pulse Width Fast Output (FWHM)	1 mm	10, 20, 35 m		0.6		ns
Signal Pulse Width Fast Output (FWHM)	3 mm	20, 35, 50 m		1.5		ns
Signal Pulse Width Fast Output (FWHM)	6 mm	35 m		3.2		ns
Microcell recharge time constant	1 mm	10 m		5		ns
Microcell recharge time constant	1 mm	20 m		23		ns
Microcell recharge time constant	1 mm	35 m		82		ns
Microcell recharge time constant	3 mm	20 m		23		ns
Microcell recharge time constant	3 mm	35 m		82		ns
Microcell recharge time constant	3 mm	50 m		159		ns
Microcell recharge time constant	6 mm	35 m		95		ns
Capacitance (anodecathode) (Vbr + 2.5 V)	1 mm	10 m		50		pF
Capacitance (anodecathode) (Vbr + 2.5 V)	1 mm	20 m		90		pF
Capacitance (anodecathode) (Vbr + 2.5 V)	1 mm	35 m		100		pF
Capacitance (anodecathode) (Vbr + 2.5 V)	3 mm	20 m		770		pF
Capacitance (anodecathode) (Vbr + 2.5 V)	3 mm	35 m		850		pF
Capacitance (anodecathode) (Vbr + 2.5 V)	3 mm	50 m		920		pF
Capacitance (anodecathode) (Vbr + 2.5 V)	6 mm	35 m		3400		pF
Capacitance (fast terminal to cathode) (Vbr + 2.5 V)	1 mm	10 m		1		pF
Capacitance (fast terminal to cathode) (Vbr + 2.5 V)	1 mm	20 m		1		pF
Capacitance (fast terminal to cathode) (Vbr + 2.5 V)	1 mm	35 m		1		pF
Capacitance (fast terminal to cathode) (Vbr + 2.5 V)	3 mm	20 m		20		pF
Capacitance (fast terminal to cathode) (Vbr + 2.5 V)	3 mm	35 m		12		pF
Capacitance (fast terminal to cathode) (Vbr + 2.5 V)	3 mm	50 m		7		pF
Capacitance (fast terminal to cathode) (Vbr + 2.5 V)	6 mm	35 m		48		pF
Temperature dependence of Vbr	1 mm	10, 20, 35 m		21.5		mV/C
Temperature dependence of Vbr	3 mm	20, 35, 50 m		21.5		mV/C
Temperature dependence of Vbr	6 mm	35 m		21.5		mV/C
Temperature dependence of Gain (Note 10)	1 mm	10, 20, 35 m		-0.8		%/C
Temperature dependence of Gain (Note 10)	3 mm	20, 35, 50 m		-0.8		%/C
Temperature dependence of Gain (Note 10)	6 mm	35 m		-0.8		%/C
Crosstalk (Vbr + 2.5 V)	1 mm	10 m		0.6		%
Crosstalk (Vbr + 2.5 V)	1 mm	20 m		3		%
Crosstalk (Vbr + 2.5 V)	1 mm	35 m		7		%
Crosstalk (Vbr + 2.5 V)	3 mm	20 m		3		%
Crosstalk (Vbr + 2.5 V)	3 mm	35 m		7		%
Crosstalk (Vbr + 2.5 V)	3 mm	50 m		10		%
Crosstalk (Vbr + 2.5 V)	6 mm	35 m		7		%
Afterpulsing (Vbr + 2.5 V)	1 mm	10 m		0.2		%
Afterpulsing (Vbr + 2.5 V)	1 mm	20 m		0.2		%
Afterpulsing (Vbr + 2.5 V)	1 mm	35 m		0.2		%
Afterpulsing (Vbr + 2.5 V)	3 mm	20 m		0.2		%
Afterpulsing (Vbr + 2.5 V)	3 mm	35 m		0.2		%
Afterpulsing (Vbr + 2.5 V)	3 mm	50 m		0.6		%
Afterpulsing (Vbr + 2.5 V)	6 mm	35 m		0.2		%
Active area	1 mm			1 1 mm
Active area	3 mm			3 3 mm
Active area	6 mm			6 6 mm
No. of microcells	1 mm	10010	2880
No. of microcells	1 mm	10020	1296
No. of microcells	1 mm	10035	504
No. of microcells	3 mm	30020	10998
No. of microcells	3 mm	30035	4774
No. of microcells	3 mm	30050	2668
No. of microcells	6 mm	60035	18980
Microcell fill factor	1 mm	10010	28%
Microcell fill factor	1 mm	10020	48%
Microcell fill factor	1 mm	10035	64%
Microcell fill factor	3 mm	30020	48%
Microcell fill factor	3 mm	30035	64%
Microcell fill factor	3 mm	30050	72%
Microcell fill factor	6 mm	60035	64%
Package dimensions	1 mm			1.5 1.8 mm
Package dimensions	3 mm			4 4 mm
Package dimensions	6 mm			7 7 mm
Recommended operating temperature range			-40C		+85C
Maximum storage temperature					+105C
Maximum current levels	1 mm			6 mA
Maximum current levels	3 mm			15 mA
Maximum current levels	6 mm			20 mA

2411220127_onsemi-MICROFC-30050-SMT-TR1_C905853.pdf

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