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quality silicon photomultiplier onsemi MICROFJ-40035-TSV-TR with p on n silicon process and robust temperature stability factory
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quality silicon photomultiplier onsemi MICROFJ-40035-TSV-TR with p on n silicon process and robust temperature stability factory
quality silicon photomultiplier onsemi MICROFJ-40035-TSV-TR with p on n silicon process and robust temperature stability factory
quality silicon photomultiplier onsemi MICROFJ-40035-TSV-TR with p on n silicon process and robust temperature stability factory
>
Specifications
Voltage - DC Reverse(Vr):
24.7V
Spectral Range:
200nm~900nm
Dark Current:
3uA
Operating Temperature:
-40℃~+85℃
Mfr. Part #:
MICROFJ-40035-TSV-TR
Package:
WBGA-14
Key Attributes
Model Number: MICROFJ-40035-TSV-TR
Product Description

Product Overview

The onsemi J-Series Silicon Photomultipliers (SiPM) are high-performance, low-light sensors designed for applications requiring high Photon Detection Efficiency (PDE) and excellent timing resolution. Utilizing a P-on-N silicon foundry process and a Through Silicon Via (TSV) package, these sensors offer minimal deadspace and compatibility with industry-standard reflow soldering. Key advantages include low operating voltage, excellent temperature stability, robustness, compactness, output uniformity, and cost-effectiveness. The J-Series sensors are available in 3 mm, 4 mm, and 6 mm sizes, making them suitable for various custom applications and tiling configurations.

Product Attributes

  • Brand: onsemi
  • Origin: Silicon
  • Material: P-on-N silicon, Glass Cover

Technical Specifications

ModelActive AreaNo. of MicrocellsMicrocell Fill FactorBreakdown Voltage (Vbr) (Typical)Operating Voltage (Vop = Vbr + OV)Spectral RangePeak PDE Wavelength ( p)Dark Count Rate (Typical)Gain (anode-cathode)Dark Current (Typical)Rise Time (anode-cathode output)Microcell Recharge Time ConstantCapacitance (anode output)Capacitance (fast output)Fast Output Pulse Width (FWHM)CrosstalkAfterpulsingPackage DimensionsRecommended Operating Temperature RangeMaximum Average Current
300203.07 3.07 mm14,410 (30020) / 5,676 (30035)62% (30020) / 75% (30035)24.7 V25.2 - 30.7 V200 - 900 nm420 nm50 kHz/mm1.0 10 (1.9 10 max)0.1 A (0.45 A max)130 ps (160 ps max)15 ns1040 pF50 pF1.4 ns2.5% (7.5% max)0.75% (5.0% max)3.16 3.16 mm-40C to +85C10 mA
400353.93 3.93 mm9,26075%24.7 V25.2 - 30.7 V200 - 900 nm420 nm50 kHz/mm2.9 10 (6.3 10 max)0.35 A (3.0 A max)90 ps (110 ps max)48 ns1800 pF70 pF1.7 ns8% (25% max)0.75% (5.0% max)4.00 4.00 mm-40C to +85C10 mA
600356.07 6.07 mm22,29275%24.7 V25.2 - 30.7 V200 - 900 nm420 nm50 kHz/mm2.9 10 (6.3 10 max)0.9 A (7.5 A max)180 ps (250 ps max)50 ns4140 pF160 pF3.0 ns8% (25% max)0.75% (5.0% max)6.13 6.13 mm-40C to +85C15 mA

2410010231_onsemi-MICROFJ-40035-TSV-TR_C891568.pdf

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