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Specifications
Voltage - DC Reverse(Vr):
24.7V
Spectral Range:
300nm~950nm
Dark Current:
618nA
Operating Temperature:
-40℃~+85℃
Mfr. Part #:
MICROFC-60035-SMT-TR
Package:
SMD-4P
Key Attributes
Model Number:
MICROFC-60035-SMT-TR
Product Description
Product Overview
The ON Semiconductor C-Series Silicon Photomultipliers (SiPM) are low-light sensors offering industry-leading low dark-count rates and high Photon Detection Efficiency (PDE). Designed for ultrafast timing applications, these sensors feature a fast output with rise times as low as 300 ps and pulse widths of 600 ps. Available in 1 mm, 3 mm, and 6 mm sensor sizes, they are packaged in a 4-side tileable surface mount (SMT) package compatible with lead-free reflow soldering. The C-Series SiPMs provide high gain, single-photon sensitivity, and UV-to-visible light detection, exhibiting performance characteristics similar to conventional PMTs with the advantages of solid-state technology: low operating voltage, excellent temperature stability, robustness, compactness, output uniformity, and low cost.
Product Attributes
- Brand: ON Semiconductor
- Origin: Semiconductor Components Industries, LLC
- Material: Solid-state
- Certifications: Compatible with industry standard, lead-free, reflow soldering processes.
Technical Specifications
| Parameter | Sensor Size | Microcell Size | Min. | Typ. | Max. | Units |
| Breakdown Voltage (Vbr) | 1 mm | 10, 20, 35 m | 24.2 | 24.7 | V | |
| Breakdown Voltage (Vbr) | 3 mm | 20, 35, 50 m | V | |||
| Breakdown Voltage (Vbr) | 6 mm | 35 m | V | |||
| Recommended overvoltage Range (Voltage above Vbr) | 1 mm | 10, 20, 35 m | 1.0 | 5.0 | V | |
| Recommended overvoltage Range (Voltage above Vbr) | 3 mm | 20, 35, 50 m | V | |||
| Recommended overvoltage Range (Voltage above Vbr) | 6 mm | 35 m | V | |||
| Spectral Range | 1 mm | 10, 20, 35 m | 300 | 950 | nm | |
| Spectral Range | 3 mm | 20, 35, 50 m | nm | |||
| Spectral Range | 6 mm | 35 m | nm | |||
| Peak Wavelength (p) | 1 mm | 10, 20, 35 m | 420 | nm | ||
| Peak Wavelength (p) | 3 mm | 20, 35, 50 m | nm | |||
| Peak Wavelength (p) | 6 mm | 35 m | nm | |||
| PDE at p (Vbr + 2.5 V) | 1 mm | 10 m | 14% | % | ||
| PDE at p (Vbr + 2.5 V) | 1 mm | 20 m | 24% | % | ||
| PDE at p (Vbr + 2.5 V) | 1 mm | 35 m | 31% | % | ||
| PDE at p (Vbr + 5.0 V) | 1 mm | 10 m | 18% | % | ||
| PDE at p (Vbr + 5.0 V) | 1 mm | 20 m | 31% | % | ||
| PDE at p (Vbr + 5.0 V) | 1 mm | 35 m | 41% | % | ||
| PDE at p (Vbr + 2.5 V) | 3 mm | 20 m | 24% | % | ||
| PDE at p (Vbr + 2.5 V) | 3 mm | 35 m | 31% | % | ||
| PDE at p (Vbr + 2.5 V) | 3 mm | 50 m | 35% | % | ||
| PDE at p (Vbr + 5.0 V) | 3 mm | 20 m | 31% | % | ||
| PDE at p (Vbr + 5.0 V) | 3 mm | 35 m | 41% | % | ||
| PDE at p (Vbr + 5.0 V) | 3 mm | 50 m | 47% | % | ||
| PDE at p (Vbr + 2.5 V) | 6 mm | 35 m | 31% | % | ||
| PDE at p (Vbr + 5.0 V) | 6 mm | 35 m | 41% | % | ||
| Gain (anode to cathode readout) (Vbr + 2.5 V) | 1 mm | 10 m | 2 10 | |||
| Gain (anode to cathode readout) (Vbr + 2.5 V) | 1 mm | 20 m | 1 10 | |||
| Gain (anode to cathode readout) (Vbr + 2.5 V) | 1 mm | 35 m | 3 10 | |||
| Gain (anode to cathode readout) (Vbr + 2.5 V) | 3 mm | 20 m | 1 10 | |||
| Gain (anode to cathode readout) (Vbr + 2.5 V) | 3 mm | 35 m | 3 10 | |||
| Gain (anode to cathode readout) (Vbr + 2.5 V) | 3 mm | 50 m | 6 10 | |||
| Gain (anode to cathode readout) (Vbr + 2.5 V) | 6 mm | 35 m | 3 10 | |||
| Dark Current (Vbr + 2.5 V) | 1 mm | 10 m | 1 | 3 | nA | |
| Dark Current (Vbr + 2.5 V) | 1 mm | 20 m | 5 | 16 | nA | |
| Dark Current (Vbr + 2.5 V) | 1 mm | 35 m | 15 | 49 | nA | |
| Dark Current (Vbr + 2.5 V) | 3 mm | 20 m | 50 | 142 | nA | |
| Dark Current (Vbr + 2.5 V) | 3 mm | 35 m | 154 | 443 | nA | |
| Dark Current (Vbr + 2.5 V) | 3 mm | 50 m | 319 | 914 | nA | |
| Dark Current (Vbr + 2.5 V) | 6 mm | 35 m | 618 | 1750 | nA | |
| Dark Count Rate (Vbr + 2.5 V) | 1 mm | 10 m | 30 | 96 | kHz | |
| Dark Count Rate (Vbr + 2.5 V) | 1 mm | 20 m | 30 | 96 | kHz | |
| Dark Count Rate (Vbr + 2.5 V) | 1 mm | 35 m | 30 | 96 | kHz | |
| Dark Count Rate (Vbr + 2.5 V) | 3 mm | 20 m | 300 | 860 | kHz | |
| Dark Count Rate (Vbr + 2.5 V) | 3 mm | 35 m | 300 | 860 | kHz | |
| Dark Count Rate (Vbr + 2.5 V) | 3 mm | 50 m | 300 | 860 | kHz | |
| Dark Count Rate (Vbr + 2.5 V) | 6 mm | 35 m | 1200 | 3400 | kHz | |
| Rise Time Fast Output | 1 mm | 10, 20, 35 m | 0.3 | ns | ||
| Rise Time Fast Output | 3 mm | 20, 35, 50 m | 0.6 | ns | ||
| Rise Time Fast Output | 6 mm | 35 m | 1.0 | ns | ||
| Signal Pulse Width Fast Output (FWHM) | 1 mm | 10, 20, 35 m | 0.6 | ns | ||
| Signal Pulse Width Fast Output (FWHM) | 3 mm | 20, 35, 50 m | 1.5 | ns | ||
| Signal Pulse Width Fast Output (FWHM) | 6 mm | 35 m | 3.2 | ns | ||
| Microcell recharge time constant | 1 mm | 10 m | 5 | ns | ||
| Microcell recharge time constant | 1 mm | 20 m | 23 | ns | ||
| Microcell recharge time constant | 1 mm | 35 m | 82 | ns | ||
| Microcell recharge time constant | 3 mm | 20 m | 23 | ns | ||
| Microcell recharge time constant | 3 mm | 35 m | 82 | ns | ||
| Microcell recharge time constant | 3 mm | 50 m | 159 | ns | ||
| Microcell recharge time constant | 6 mm | 35 m | 95 | ns | ||
| Capacitance (anodecathode) (Vbr + 2.5 V) | 1 mm | 10 m | 50 | pF | ||
| Capacitance (anodecathode) (Vbr + 2.5 V) | 1 mm | 20 m | 90 | pF | ||
| Capacitance (anodecathode) (Vbr + 2.5 V) | 1 mm | 35 m | 100 | pF | ||
| Capacitance (anodecathode) (Vbr + 2.5 V) | 3 mm | 20 m | 770 | pF | ||
| Capacitance (anodecathode) (Vbr + 2.5 V) | 3 mm | 35 m | 850 | pF | ||
| Capacitance (anodecathode) (Vbr + 2.5 V) | 3 mm | 50 m | 920 | pF | ||
| Capacitance (anodecathode) (Vbr + 2.5 V) | 6 mm | 35 m | 3400 | pF | ||
| Capacitance (fast terminal to cathode) (Vbr + 2.5 V) | 1 mm | 10 m | 1 | pF | ||
| Capacitance (fast terminal to cathode) (Vbr + 2.5 V) | 1 mm | 20 m | 1 | pF | ||
| Capacitance (fast terminal to cathode) (Vbr + 2.5 V) | 1 mm | 35 m | 1 | pF | ||
| Capacitance (fast terminal to cathode) (Vbr + 2.5 V) | 3 mm | 20 m | 20 | pF | ||
| Capacitance (fast terminal to cathode) (Vbr + 2.5 V) | 3 mm | 35 m | 12 | pF | ||
| Capacitance (fast terminal to cathode) (Vbr + 2.5 V) | 3 mm | 50 m | 7 | pF | ||
| Capacitance (fast terminal to cathode) (Vbr + 2.5 V) | 6 mm | 35 m | 48 | pF | ||
| Temperature dependence of Vbr | 1 mm | 10, 20, 35 m | 21.5 | mV/C | ||
| Temperature dependence of Vbr | 3 mm | 20, 35, 50 m | mV/C | |||
| Temperature dependence of Vbr | 6 mm | 35 m | mV/C | |||
| Temperature dependence of Gain (Note 10) | 1 mm | 10, 20, 35 m | -0.8% | %/C | ||
| Temperature dependence of Gain (Note 10) | 3 mm | 20, 35, 50 m | %/C | |||
| Temperature dependence of Gain (Note 10) | 6 mm | 35 m | %/C | |||
| Crosstalk (Vbr + 2.5 V) | 1 mm | 10 m | 0.6% | % | ||
| Crosstalk (Vbr + 2.5 V) | 1 mm | 20 m | 3% | % | ||
| Crosstalk (Vbr + 2.5 V) | 1 mm | 35 m | 7% | % | ||
| Crosstalk (Vbr + 2.5 V) | 3 mm | 20 m | 3% | % | ||
| Crosstalk (Vbr + 2.5 V) | 3 mm | 35 m | 7% | % | ||
| Crosstalk (Vbr + 2.5 V) | 3 mm | 50 m | 10% | % | ||
| Crosstalk (Vbr + 2.5 V) | 6 mm | 35 m | 7% | % | ||
| Afterpulsing (Vbr + 2.5 V) | 1 mm | 10 m | 0.2% | % | ||
| Afterpulsing (Vbr + 2.5 V) | 1 mm | 20 m | 0.2% | % | ||
| Afterpulsing (Vbr + 2.5 V) | 1 mm | 35 m | 0.2% | % | ||
| Afterpulsing (Vbr + 2.5 V) | 3 mm | 20 m | 0.2% | % | ||
| Afterpulsing (Vbr + 2.5 V) | 3 mm | 35 m | 0.2% | % | ||
| Afterpulsing (Vbr + 2.5 V) | 3 mm | 50 m | 0.6% | % | ||
| Afterpulsing (Vbr + 2.5 V) | 6 mm | 35 m | 0.2% | % | ||
| Active area | 1 mm | 1 1 mm | ||||
| Active area | 3 mm | 3 3 mm | ||||
| Active area | 6 mm | 6 6 mm | ||||
| No. of microcells | 1 mm | 10010 | 2880 | |||
| No. of microcells | 1 mm | 10020 | 1296 | |||
| No. of microcells | 1 mm | 10035 | 504 | |||
| No. of microcells | 3 mm | 30020 | 10998 | |||
| No. of microcells | 3 mm | 30035 | 4774 | |||
| No. of microcells | 3 mm | 30050 | 2668 | |||
| No. of microcells | 6 mm | 60035 | 18980 | |||
| Microcell fill factor | 1 mm | 10010 | 28% | |||
| Microcell fill factor | 1 mm | 10020 | 48% | |||
| Microcell fill factor | 1 mm | 10035 | 64% | |||
| Microcell fill factor | 3 mm | 30020 | 48% | |||
| Microcell fill factor | 3 mm | 30035 | 64% | |||
| Microcell fill factor | 3 mm | 30050 | 72% | |||
| Microcell fill factor | 6 mm | 60035 | 64% | |||
| Package dimensions | 1 mm | 1.5 1.8 mm | ||||
| Package dimensions | 3 mm | 4 4 mm | ||||
| Package dimensions | 6 mm | 7 7 mm | ||||
| Recommended operating temperature range | -40C | +85C | ||||
| Maximum storage temperature | +105C | |||||
| Maximum Current Levels | 1 mm | 6 | mA | |||
| Maximum Current Levels | 3 mm | 15 | mA | |||
| Maximum Current Levels | 6 mm | 20 | mA |
2411220151_onsemi-MICROFC-60035-SMT-TR_C603293.pdf
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