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Specifications
Sensing Distance:
5mm
Mfr. Part #:
EE-SY410
Package:
DIP-5
Key Attributes
Model Number:
EE-SY410
Product Description
Product Overview
The EE-SY310/-SY410 are compact, reflective photomicrosensors featuring an integrated IC chip with a built-in detector element and amplifier, including temperature compensation. These sensors offer a wide supply voltage range of 4.5 to 16 VDC and can directly interface with C-MOS and TTL logic. The EE-SY310 is a Dark ON model, while the EE-SY410 is a Light ON model. They are designed for sensing applications with a recommended sensing distance of 5.0 mm.
Product Attributes
- Brand: Omron (implied by product code format)
- Type: Photomicrosensor (Reflective)
- Housing: Molded
Technical Specifications
| Model | Dimensions (mm) | Features | Supply Voltage (VDC) | Sensing Distance (mm) | Model Type |
|---|---|---|---|---|---|
| EE-SY310/-SY410 | Refer to diagram (units in mm) | Built-in detector element & amplifier, Temperature compensation circuit, Compact reflective model | 4.5 to 16 | Recommended: 5.0 |
|
| Parameter | Symbol | Rated Value / Condition | Notes |
|---|---|---|---|
| Emitter Forward Current | IF | 50 mA | 1 |
| Emitter Reverse Voltage | VR | 4 V | |
| Emitter Pulse Forward Current | IFP | 1 A | 2 |
| Detector Power Supply Voltage | VCC | 16 V | |
| Detector Output Voltage | VOUT | 28 V | |
| Detector Output Current | IOUT | 16 mA | |
| Permissible Output Dissipation | POUT | 250 mW | 1 |
| Operating Ambient Temperature | Topr | 40C to 75C | |
| Storage Temperature | Tstg | 40C to 85C | |
| Soldering Temperature | Tsol | 260C | 3 |
| Electrical and Optical Characteristics | Symbol | Value | Condition |
|---|---|---|---|
| Emitter Forward Voltage | VF | 1.2 V typ., 1.5 V max. | IF = 20 mA |
| Emitter Reverse Current | IR | 0.01 A typ., 10 A max. | VR = 4 V |
| Emitter Peak Emission Wavelength | P | 920 nm typ. | IF = 20 mA |
| Detector Low-level Output Voltage | VOL | 0.12 V typ., 0.4 V max. | Vcc = 4.5 to 16 V, IOL = 16 mA, without incident light (EE-SY310), with incident light (EE-SY410) |
| Detector High-level Output Voltage | VOH | 15 V min. | Vcc = 16 V, RL = 1 k, with incident light (EE-SY310), without incident light (EE-SY410) |
| Detector Current Consumption | ICC | 3.2 mA typ., 10 mA max. | Vcc = 16 V |
| Detector Peak Spectral Sensitivity Wavelength | P | 870 nm typ. | VCC = 4.5 to 16 V |
| LED Current when Output is OFF | IFT OFF | 6 mA typ., 15 mA max. | VCC = 4.5 to 16 V |
| LED Current when Output is ON | IFT ON | (Values not explicitly stated, implied by Hysteresis) | VCC = 4.5 to 16 V |
| Hysteresis | H | 17% typ. | VCC = 4.5 to 16 V |
| Response Frequency | f | 50 Hz min. | VCC = 4.5 to 16 V, IF = 15 mA, IOL = 16 mA |
| Response Delay Time (tPLH) | tPLH | 3 s typ. | VCC = 4.5 to 16 V, IF = 15 mA, IOL = 16 mA |
| Response Delay Time (tPHL) | tPHL | 20 s typ. | VCC = 4.5 to 16 V, IF = 15 mA, IOL = 16 mA |
Notes:
- 1. Refer to the temperature rating chart if the ambient temperature exceeds 25C.
- 2. The pulse width is 10 s maximum with a frequency of 100 Hz.
- 3. Complete soldering within 10 seconds.
- "With incident light" denotes the condition whereby the light reflected by white paper with a reflection factor of 90% at a sensing distance of 5 mm is received by the photo IC when the forward current (IF) of the LED is 20 mA.
- Sensing object: White paper with a reflection factor of 90% at a sensing distance of 5 mm.
- Hysteresis denotes the difference in forward LED current value, expressed in percentage, calculated from the respective forward LED currents when the photo IC is turned from ON to OFF and when the photo IC is turned from OFF to ON.
2501101203_OMRON-EE-SY410_C2837181.pdf
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