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quality Stable magnetic switch points non polar Hall effect switch NATLINEAR LN245MR for mobile applications factory
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quality Stable magnetic switch points non polar Hall effect switch NATLINEAR LN245MR for mobile applications factory
>
Specifications
Operation Points:
1.5mT
Operating Current:
350uA
Release Points:
1.1mT
Operating Temperature:
-40℃~+85℃
Voltage - Supply:
1.65V~6V
Mfr. Part #:
LN245MR
Package:
SOT-23
Key Attributes
Model Number: LN245MR
Product Description

Product Overview

The LN245 is a non-polar Hall effect switch based on mixed-signal CMOS technology. It features advanced chopper-stabilized circuitry for accurate and stable magnetic switch points. The integrated clock mechanism provides timing for the Hall device and analog signal processing, enabling periodic 'sleep' mode for power saving and 'wake-up' for magnetic field detection. The output latching transistor is driven when the magnetic flux density exceeds the 'operate point' threshold or falls below the 'release point' threshold. During sleep cycles, the output transistor remains in its previous state. The output transistor latches ON in the presence of a South or North pole magnetic field and latches OFF in the absence of a magnetic field.

Typical Applications: Mobile phones, laptop computers, portable electronic devices, and more.

Product Attributes

  • Brand: Natlinear
  • Technology: Mixed-signal CMOS
  • Switch Type: Non-polar Hall effect switch
  • Output: Digital
  • Sensitivity: High
  • Stability: High
  • Frequency: High
  • Robustness: Strong against mechanical stress

Technical Specifications

Parameter Symbol Min Typical Max Unit Conditions
Operating Temperature Range TA -40 85 C
Operating Voltage Range VDD 1.65 6.0 V
Supply Voltage VDD 1.8 6.0 V AC/DC Characteristics
Average Supply Current ISAVG 100 350 1000 uA VDD=3V, Ta=25
Average Current During Operating Time ISOPAVG 0.5 2.0 3.5 mA VDD=3V, Ta=25
Peak Current During Operating Time ISOPT 4.5 mA VDD=3V, Ta=25
Supply Current in Off State ISSTB 1 1.9 8 uA VDD=3V, Ta=25
Output Saturation Voltage VQSAT 0.13 0.4 V IQ=1mA, VDD=3V, Ta=25
Output Leakage Current IQLEAK 0.01 1 uA VDD=3V, Ta=25
Output Rise Time tr 0.5 1 us RL=2.7K, CL=10pF, VDD=3V, Ta=25
Output Fall Time tf 0.1 1 us RL=2.7K, CL=10pF, VDD=3V, Ta=25
Operating Time top 55 85 120 us VDD=3V, Ta=25
Standby Time tstb 250 350 550 us VDD=3V, Ta=25
Duty Cycle top/tstb 20 % VDD=3V, Ta=25
Chip Startup Time tstu 12 20 us VDD=3V, Ta=25
Operate Point (South Pole) BOPS 1.3 1.5 1.7 mT VDD=2.7V, Ta=25
Operate Point (North Pole) BOPN -1.7 -1.5 -1.3 mT VDD=2.7V, Ta=25
Release Point (South Pole) BRPS 0.9 1.1 1.3 mT VDD=2.7V, Ta=25
Release Point (North Pole) BRPN -1.3 -1.1 -0.9 mT VDD=2.7V, Ta=25
Hysteresis BHYS 0.2 0.4 0.6 mT VDD=2.7V, Ta=25
Absolute Maximum Rating: Operating Voltage VDD -0.3 6.0 V
Absolute Maximum Rating: Operating Current IDD -1 4.5 mA
Absolute Maximum Rating: Output Voltage VOUIT -0.3 6.0 V
Absolute Maximum Rating: Output Current IOUT -1 2 mA
Absolute Maximum Rating: Storage Temperature Tstg -45 150
Absolute Maximum Rating: Junction Temperature 150
Absolute Maximum Rating: ESD Parameter 4000 V
Pin Number Name Definition
1 VDD Power Supply Voltage
2 VOUT Output
3 GND Ground
Order Code Package Code Package Type Marking
LN245MR M SOT-23-3 45XY

Package Information

  • SOT-23-3

1811151533_NATLINEAR-LN245MR_C177117.pdf

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