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quality Battery operated CMOS Hall effect sensor NATLINEAR LN4913NR-G featuring omnipolar switching behavior factory
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quality Battery operated CMOS Hall effect sensor NATLINEAR LN4913NR-G featuring omnipolar switching behavior factory
>
Specifications
BHYS:
8Gs
Operating Current:
3uA
Operation Points:
3.5mT
Release Points:
2.7mT
Voltage - Supply:
1.65V~6V
Mfr. Part #:
LN4913NR-G
Package:
TSOT-23-3
Key Attributes
Model Number: LN4913NR-G
Product Description

Product Overview

The LN4913 is a low-power, high-sensitivity CMOS Hall-effect sensor IC designed for battery-operated devices. It functions as an On/Off switch, ideal for applications like cellular flip-phones and notebook PCs. The device features precise magnetic switching points, high temperature stability, and an omnipolar switching behavior, allowing activation by either magnetic pole. Its micro-power design and onboard clock scheme significantly reduce average operating current by utilizing an operate and standby phase, with the output stage latched in standby to minimize current consumption to a few microamperes.

Product Attributes

  • Brand: NatLinear (implied by www.natlinear.com)
  • Technology: CMOS Hall-effect Sensor
  • Switching Behavior: Omnipolar (North or South pole)
  • Application Suitability: Not suitable for automotive applications

Technical Specifications

Specification Value Unit Notes
Supply Voltage (VDD) 1.65 to 5.5 V Battery operation
Average Supply Current (ISAVG) 1 to 10 uA (TA=+25, VDD=3.0V)
Average Current (Operating Phase) (ISOPAVG) 0.5 to 3.5 mA (TA=+25, VDD=3.0V)
Peak Current (Operating Phase) (ISOPT) 4.5 mA (TA=+25, VDD=3.0V)
Supply Current (Standby Phase) (ISSTB) 1 to 8 uA (TA=+25, VDD=3.0V)
Output Saturation Voltage (VQSAT) 0.13 to 0.4 V IQ=1mA, (TA=+25, VDD=3.0V)
Output Rise Time (tr) 0.5 to 1 us RL=2.7K, CL=10pF, (TA=+25, VDD=3.0V)
Output Fall Time (tf) 0.1 to 1 us RL=2.7K, CL=10pF, (TA=+25, VDD=3.0V)
Operating Time (top) 25 to 160 us (TA=+25, VDD=3.0V)
Standby Time (tstb) 60 to 240 ms (TA=+25, VDD=3.0V)
Start-up Time (tstu) 12 to 20 us (TA=+25, VDD=3.0V)
BOP (Switch ON Point, Positive) 2 to 5 mT (TA=+25, VDD=2.7V)
BOP (Switch ON Point, Negative) -5 to -2 mT (TA=+25, VDD=2.7V)
BRP (Switch OFF Point, Positive) 1.2 to 4.2 mT (TA=+25, VDD=2.7V)
BRP (Switch OFF Point, Negative) -4.2 to -1.2 mT (TA=+25, VDD=2.7V)
Hysteresis (BHYS) 0.2 to 1.6 mT (TA=+25, VDD=2.7V)
Absolute Maximum Supply Voltage (VDD) -0.3 to 6.0 V
Absolute Maximum Junction Temperature (TJ) 150 C
Absolute Maximum Storage Temperature -40 to +150 C
ESD Protection 4000 V
Package Options SOT-23-3, TSOT-23-3, TO-92S, DFN2015-6, DFN2*2-3

Available Packages

  • SOT-23-3
  • TSOT-23-3
  • TO-92S
  • DFN2015-6
  • DFN2*2-3

Applications

  • Cover switch in clam-shell cellular phones
  • Cover switch in Notebook PC/PDA
  • Contact-less switch in consumer products

2410121231_NATLINEAR-LN4913NR-G_C236384.pdf

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