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quality High Sensitivity MEMSIC MHA100KN Hall Effect Sensor Offering Wide Operating Voltage and Compact Size factory
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quality High Sensitivity MEMSIC MHA100KN Hall Effect Sensor Offering Wide Operating Voltage and Compact Size factory
>
Specifications
Voltage - Supply:
1.65V~5.5V
Mfr. Part #:
MHA100KN
Package:
XDFN-4-EP
Key Attributes
Model Number: MHA100KN
Product Description

Product Overview

The MEMSIC MHA100KN is a high-performance, low-power Hall-Effect sensor designed for various applications. Utilizing a low-power CMOS process, it offers a wide operation voltage range and ultra-low power consumption (<5uA@1.8V). The sensor features good RF noise immunity and omnipolar operation, providing dual outputs for N and S pole detection. It is RoHS compliant and comes in a compact DFN4 package.

Product Attributes

  • Brand: MEMSIC
  • Product Name: MHA100KN
  • Package Type: DFN4
  • Certifications: RoHS compliant

Technical Specifications

ParameterConditionsMinTypMaxUnits
Supply Voltage (VDD)1.651.85.5V
Supply Current2.55.0A
Supply Current-40~85 C2.510.0A
Power Down Current1.0nA
Operating Temperature-4085C
Storage Temperature-55125C
Awake Time (Tawake)50100s
Period (Tperiod)50100ms
Duty Cycle0.05%
Output High (VOH)IOUT=+0.5mAVDD-0.3VDD+0.1V
Output Low (VOL)IOUT=-0.5mA-0.30.1V
Output Current-0.50.5mA
Magnetic Opening Point (BOP)273747Gauss
Magnetic Releasing Point (BRP)203040Gauss
Hysteresis Window (BHYS)27Gauss

2411111211_MEMSIC-MHA100KN_C3716210.pdf

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